DATA SHEET Silicon Transistor NE97833 / 2SA1978 JEITA Part No. D PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER High fT * High speed switching characteristics * Equivalent NPN transistor is the NE02133 / 2SC2351. * Alternative of the 2SA1424. _0.2 2.9+ 2 Collector to Emitter Voltage VCE0 Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature -20 V -12 V VEB0 -3.0 V IC -50 mA PT 200 mW Ti 150 C -65 to +150 C Tstg SC O ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Symbol 0.95 Marking 0.16 +0.1 -0.06 VCB0 Unit NT Collector to Base Voltage Rating Test Conditions 0 to 0.1 Symbol 3 1 0.3 Parameter 0.65 +0.1 -0.15 2 IN ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 1.5 0.4 +0.1 -0.05 | S21e | = 10.0 dB TYP. @f = 1.0 GHz, VCE = -10 V, IC = -15 mA 0.95 * 0.4 +0.1 -0.05 _0.2 2.8+ fT = 5.5 GHz TYP. 1.1 to 1.4 * PACKAGE DIMENSIONS (in milimeters) UE FEATURES PIN CONNECTIONS 1: Emitter 2: Base 3: Collector Marking: T93 MIN. TYP. MAX. Unit Collector Cutoff Current ICB0 VCB = -10 V -0.1 A Emitter Cutoff Current IEB0 VEB = -2 V -0.1 A DC Current Gain hFE VCE = -10 V, IC = -15 mA 20 40 Gain Bandwidth Product fT VCE = -10 V, IC = -15 mA 4.0 5.5 Collector Capacitance Cre* | S21e | Noise Figure NF DI Insertion Power Gain VCB = -10 V, IE = 0, f = 1 MHz 2 VCE = -10 V, IC = -15 mA, f = 1.0 GHz VCE = -10 V, IC = -3.0 mA, f = 1 GHz 0.5 8.0 Rank FB Marking T93 hFE 20 to 100 Document No. P11028EJ1V0DS00 (1st edition) Date Published April 1996 P GHz 1 10.0 2.0 * Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal. hFE Classification 100 pF dB 3 dB NE97833 / 2SA1978 SWITCHING CHARACTERISTICS Vin = 1 V Parameter Symbol Turn-on Delay Time ton (delay) 1.10 ns Rise Time tr 0.77 ns Turn off Delay Time toff (delay) 0.40 ns Fall Time tf 0.79 ns SWITCHING TIME MEASUREMENT CIRCUIT RC1 Vin RC2 RL1 RL2 Sampling Oscilloscope RS ton (delay) 50 VOUT VSS ( - ) NT RE VEE ( + ) Vin = 1 V, VBB = -0.5 V, RC1 = RC2 RC RL1 () () () 160 1k 200 RL2 RE VEE VCC () () (V) (V) 250 2.7 k 27 26.3 DI SC O RS 2 20 ns tr IN VOUT Vin VCC ( - ) UE D Unit TYP toff (delay) tf NE97833 / 2SA1978 TYPICAL CHARACTERISTICS TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE NOISE FIGURE VS. COLLECTOR CURRENT 6 100 50 100 150 200 TA - Ambient Temperature - C SC O -0.1 -0.01 -0.1 -10 100 COLLECTOR SATURATION AND BASE TO EMITTER VOLTAGE VS. COLLECTOR CURRENT -10 VCE = -10 V IC = 10 * IB -100 -1000 -1.0 -0.1 -0.01 -0.1 -1 -10 -100 IC - Collector Current - mA IC - Collector Current - mA INSERTION GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 14 f = 1 GHZ VCE = -10 V 10 8 DI S21e 2 - Insertion Power Gain - dB -1 12 6 VCE = -3 V 4 VCE = -1 V 2 0 10 IC - Collector Current - mA VCE = -1 V -1.0 14 1 NT VBE (ON) - DC Base Voltage - V -10 2 IN BASE TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 4 0 VCE (sat) - Collector Saturation Voltage - V VBE (sat) - Base Satturation Voltage - V 0 D 200 VCE = 10 V f = 1 GHZ UE NF - Noise Figure - dB 300 1 10 IC - Collector Current - mA 100 fT - Gain Bandwidth Product - GHZ PT - Total Power Dissipation - mV 400 -1000 f = 1 GHZ 12 VCE = -10 V 10 8 6 VCE = -3 V 4 VCE = -1 V 2 0 1 10 100 IC - Collector Current - mA 3 NE97833 / 2SA1978 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE INSERTION GAIN vs. FREQUENCY f = 1 MHz 30 1 0.5 20 10 0 -10 0 1 10 100 100 VCBO - Collector to Base Voltage - V 10 -1 100 -10 -100 -1000 SC O 1 -0.1 DI Ic - Collector Current - mA 4 500 1000 3000 DC CURRENT GAIN vs. COLLECTOR CURRENT IN VCE = -3 V VCE = -2 V VCE = -1 V 200 300 f - Frequency - MHz hFE - DC Current Gain DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 1 V IC = -5 mA NT hFE - DC Current Gain 100 VCE = -10 V IC = -15 mA D 1.5 UE 2 |S21e| - Insertion Power Gain - dB Cre - Collector Capacitance - pF 2 VCE = -10 V 10 1 -0.1 -1 -10 -100 Ic - Collector Current - mA -1000 NE97833 / 2SA1978 S-PARAMETER 3 GHZ 3 GHZ UE D S11 VCE = -10 V, IC = -15 mA f = 100 MHZ IN f = 100 MHZ NT VCE = -1 V, IC = -5 mA 3 GHZ VCE = -10 V, IC = -15 mA 3 GHZ VCE = -1 V, IC = -5 mA 100 MHZ 100 MHZ DI SC O S22 5 NE97833 / 2SA1978 S-PARAMETER (VCE = 1 V, IC = 5 mA, Zo = 50 ) S21 S11 S12 S22 MAG ANG MAG ANG MAG ANG 100 0.527 - 47.1 10.5 149. 0.0359 70.6 200 0.468 - 83.4 8.37 128. 0.0584 58.7 300 0.427 - 109 6.63 114. 0.0729 53.6 5.36 ANG 0.881 - 21.1 0.716 - 34.2 0.586 - 40.9 400 0.407 - 128 0.0835 52.1 0.503 - 44.3 500 0.393 - 143 4.46 96.6 0.0930 52.1 0.443 - 45.8 600 0.388 - 154 3.82 90.2 0.100 53.1 0.401 - 46.7 700 0.386 - 164 3.34 84.9 0.109 53.3 0.373 - 47.7 800 0.388 - 172 2.96 80.1 0.118 54.4 0.351 - 49.1 900 0.392 - 179 2.67 75.8 0.128 55.6 0.332 - 50.1 1000 0.394 174 2.43 71.6 0.137 56.4 0.319 - 51.4 1100 0.399 169 2.24 68.1 0.147 56.9 0.306 - 53.2 1200 0.405 163 2.07 64.6 0.158 57.2 0.298 - 54.5 1300 0.410 159 1.93 61.3 0.168 57.6 0.289 - 57.0 1400 0.416 154 1.81 58.0 0.179 57.7 0.280 - 59.3 1500 0.422 150 1.71 54.9 0.190 57.7 0.274 - 61.2 1600 0.431 147 1.62 52.0 0.201 57.7 0.267 - 64.4 1700 0.438 143 1.54 49.3 0.213 57.5 0.262 - 66.7 1800 0.445 140 1.47 46.6 0.224 57.2 0.259 - 70.3 1900 0.451 136 1.41 44.1 0.236 56.8 0.252 - 73.6 2000 0.460 133 1.35 41.5 0.248 56.3 0.247 - 76.3 SC O NT IN 104. MAG UE MHz D f 0.465 130 1.30 39.2 0.261 55.7 0.243 - 80.2 2200 0.473 127 1.26 36.9 0.273 55.1 0.239 - 84.4 2300 0.481 125 1.21 34.8 0.286 54.3 0.234 - 87.2 2400 0.487 122 1.17 32.5 0.299 53.3 0.235 - 91.9 2500 0.493 119 1.14 30.6 0.312 52.6 0.230 - 95.9 DI 2100 6 NE97833 / 2SA1978 S-PARAMETER (VCE = 3 V, IC = 5 mA, Zo = 50 ) f S21 S11 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.558 - 37.1 11.0 153. 0.0288 74.3 915 - 16.3 200 0.485 - 67.9 9.13 133. 0.0467 83.0 784 - 27.0 300 0.423 - 92.5 7.48 119. 0.0611 58.1 670 - 33.0 6.21 109. 0.353 - 127 5.18 101. 600 0.339 - 140 4.47 95.1 700 0.329 - 151 3.92 89.9 800 0.325 - 160 3.48 84.9 900 0.325 - 169 3.14 80.7 1000 0.326 - 176 2.87 76.9 1100 0.330 177 2.64 1200 0.335 170 1300 0.339 1400 0.345 1500 0.351 1600 0.360 1700 0.366 1800 0.374 1900 0.382 2000 0.390 UE 0.381 500 56.5 590 0.0801 56.1 531 - 37.4 0.0880 56.7 490 - 38.1 0.0938 57.5 461 - 33.8 0.104 57.9 438 - 39.8 0.113 58.7 419 - 40.4 0.122 59.5 408 - 41.6 73.0 0.131 60.5 393 - 42.8 2.44 69.6 0.140 61.2 386 - 44.0 165 2.28 66.5 0.150 61.3 377 - 45.9 160 2.13 63.3 0.160 61.9 366 - 47.5 155 2.01 60.2 0.170 61.9 362 - 49.0 151 1.90 57.4 0.181 61.8 354 - 51.0 147 1.81 54.6 0.191 61.8 349 - 53.0 143 1.72 52.0 0.202 61.7 344 - 55.5 140 1.65 49.5 0.213 61.3 337 - 58.1 137 1.58 47.0 0.223 61.0 334 - 60.4 NT IN 0.0703 - 36.0 SC O 400 - 111 D MHz 0.396 133 1.52 44.6 0.233 60.4 328 - 63.0 2200 0.404 130 1.46 42.4 0.243 60.2 321 - 65.9 2300 0.413 127 1.41 40.2 0.251 59.4 318 - 68.3 2400 0.418 125 1.36 38.0 0.273 58.9 314 - 72.1 2500 0.427 122 1.32 35.9 0.255 58.2 303 - 74.8 DI 2100 7 NE97833 / 2SA1978 S-PARAMETER (VCE = 10 V, IC = 5 mA, Zo = 50 ) S21 S11 S12 S22 MAG ANG MAG ANG MAG ANG 100 0.529 - 28.8 11.3 156. 0.0234 75.4 200 0.548 - 53.5 9.70 138. 0.0412 67.4 300 0.463 - 73.9 8.20 124. 0.0530 62.1 - 91.4 MAG ANG 0.939 - 12.8 0.836 - 21.7 0.739 - 27.2 UE MHz D f 0.400 6.94 114. 0.0620 59.7 0.666 500 0.349 - 106 5.86 106. 0.0712 58.9 0.608 - 31.4 600 0.316 - 119 5.09 100. 0.0793 59.8 0.567 - 31.9 700 0.292 - 131 4.49 94.6 0.0860 59.6 0.539 - 32.7 800 0.277 - 141 4.00 89.7 0.0938 60.4 0.516 - 33.5 900 0.267 - 152 3.63 85.4 0.101 61.3 0.498 - 34.2 1000 0.261 - 160 3.31 81.5 0.109 61.9 0.485 - 35.1 1100 0.259 - 169 3.04 77.9 0.117 62.8 0.472 - 35.9 1200 0.260 - 177 2.82 74.5 0.125 63.2 0.463 - 36.9 1300 0.263 176 2.63 71.3 0.133 63.9 0.455 - 38.4 1400 0.267 169 2.46 68.2 0.143 64.4 0.448 - 39.5 1500 0.272 164 2.32 65.3 0.152 64.5 0.440 - 40.8 1600 0.280 159 2.20 62.5 0.161 64.6 0.434 - 42.5 1700 0.286 154 2.09 59.8 0.171 64.9 0.428 - 44.1 1800 0.293 149 1.99 57.3 0.191 64.8 0.423 - 46.0 1900 0.300 145 1.90 54.8 0.192 64.4 0.417 - 47.8 2000 0.308 141 1.82 52.3 0.201 64.5 0.413 - 49.7 SC O NT IN 400 - 29.9 0.315 138 1.75 49.9 0.212 63.9 0.408 - 51.9 2200 0.325 134 1.68 47.6 0.223 63.8 0.402 - 54.3 2300 0.333 131 1.63 45.5 0.235 63.2 0.397 - 56.1 2400 0.341 128 1.57 43.3 0.246 62.7 0.395 - 58.7 2500 0.348 125 1.52 41.2 0.258 62.1 0.388 - 61.0 DI 2100 8 NE97833 / 2SA1978 S-PARAMETER (VCE = 10 V, IC = 15 mA, Zo = 50 ) f S11 S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.354 - 46.6 17.87 147. 0.0190 74.6 866 - 18.3 200 0.290 - 81.8 13.45 125. 0.0317 70.0 708 - 26.9 300 0.247 - 107 10.35 113. 0.0420 68.4 601 - 29.8 8.294 0.226 500 0.215 - 141 6.799 104. 97.8 600 0.210 - 154 5.805 92.4 700 0.208 - 164 5.050 88.1 800 0.211 - 172 4.475 84.1 900 0.215 179 4.008 80.5 1000 0.218 172 3.647 77.2 1100 0.225 166 3.345 1200 0.232 160 1300 0.237 1400 0.244 1500 0.251 1600 0.261 1700 0.268 1800 0.276 1900 0.284 2000 0.292 UE 0.0518 68.3 539 - 30.5 0.0626 69.8 497 - 30.2 0.0720 70.8 470 - 30.1 0.0820 71.0 450 - 30.2 0.0919 70.9 435 - 30.6 0.102 70.9 423 - 31.1 0.112 70.7 415 - 32.2 74.2 0.121 70.9 405 - 32.9 3.086 71.1 0.133 70.3 400 - 34.2 156 2.871 68.4 0.143 70.2 394 - 35.7 151 2.685 65.7 0.153 69.7 386 - 36.8 147 2.532 63.2 0.165 69.2 381 - 38.4 143 2.392 60.5 0.174 68.7 376 - 39.9 140 2.265 58.2 0.185 68.0 373 - 41.6 137 2.155 55.7 0.196 67.3 366 - 43.7 134 2.059 53.5 0.207 66.5 360 - 45.7 131 1.974 51.1 0.219 65.8 356 - 47.5 SC O NT IN 400 - 126 D MHz 0.299 128 1.897 49.0 0.230 65.1 350 - 49.7 2200 0.308 125 1.826 46.9 0.242 64.2 345 - 51.8 2300 0.317 123 1.763 44.7 0.252 63.3 341 - 53.8 2400 0.324 121 1.697 42.7 0.264 62.4 337 - 56.7 2500 0.332 119 1.646 40.7 0.276 61.5 331 - 58.8 DI 2100 9 NOTICE 5. 6. 7. 8. 9. 10. 11. 12. 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