2SK1458LS
No.3461-1/4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 900 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID0.2 A
Drain Current (Pulse) IDP PW10µs, duty cycle1% 0.4 A
Allowable Power Dissipation PD2.0 W
Tc=25°C20W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 900 V
Zero-Gate Voltage Drain Current IDSS VDS=900V, VGS=0 1.0 mA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0 ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.0 V
Forward T ransfer Admittance yfsVDS=20V, ID=0.1A 0.08 0.15 S
Marking : K1458 Continued on next page.
Features
Low ON-resistance.
Ultrahigh-speed switching.
Micaless package facilitating mounting.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN3461B
2SK1458LS
Package Dimensions
unit : mm
2078C
[2SK1458LS]
N3001 TS IM TA-3433 / 61099 TH (KT) / 72597 TS (KOTO) / 6131 JN (KOTO)
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5 2.8
123
10.0 3.2
2SK1458LS
No.3461-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Static Drain-to-Source On-State Resistance RDS(on) ID=0.1A, VGS=10V 50 70
Input Capacitance Ciss VDS=20V, f=1MHz 45 pF
Output Capacitance Coss VDS=20V, f=1MHz 25 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 10 pF
Turn-ON Delay Time td(on) ID=0.1A, VGS=10V, VDD=200V, RGS=5010 ns
Rise T ime trID=0.1A, VGS=10V, VDD=200V, RGS=5015 ns
Turn-OFF Delay Time td(off) ID=0.1A, VGS=10V, VDD=200V, RGS=5030 ns
Fall T ime tfID=0.1A, VGS=10V, VDD=200V, RGS=50 180 ns
Diode Forward Voltage VSD IS=0.2A, VGS=0 1.8 V
(Note) Be careful in handling the 2SK1458LS because it has no protection diode between gate and source.
Switching Time Test Circuit
0
ID -- VGS
0.4
0.3
0.1
0.2
0
0
2681014124
0
ID -- VDS
0.24
0.20
0.16
0.12
0.08
0.04
1248 242016
4V
5V
3V
VGS=10V
ITR01568
ITR01570
VDS=20V
Tc=25°C
75°C
120°C
00
ID -- VDS
0.4
0.5
0.3
0.2
0.1
3010 20 605040
4V
3V
5V
6V
VGS=10V
ITR01569
ITR01571
--60
ID -- Tc
0.4
0.3
0.2
0.1
040--40 12080 1600 20 10060 140--20
VGS=10V
VDS=20V
10V
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C
Drain Current, ID -- A
P.W.=1µs
D.C.0.5%
P.G. RGS
50
ID=0.1A
RL=2k
VDD
200V
VGS
10V VOUT
2SK1458LS
G
S
D
2SK1458LS
No.3461-3/4
A S O
0.1
0.01
1.0
5
7
3
2
5
7
3
5
7
2
10 100 1000
23 57 2 235723 57
ITR01579
SW Time -- ID
100
2
5
7
5
5
7
1000
3
10
2
7
3
3
2
255377
0.1 2537
1.00.01
VDD=200V
VGS=10V
P.W.=1µs
D.C.0.5%
td(on)
tr
td(off)
tf
ITR01573
<50µs
1ms
10ms
DC operation
Operation in
this area is
limited by RDS(on).
ID=0.2A
IDP=0.4A
0
Ciss, Coss, Crss -- VDS
10
3
2
7
5
1.0
7
5
3
2
7
5
3
2
100
81216202428324
ITR01578
VGS=0
f=1MHz
Ciss
Coss
Crss
ITR01575
--60
RDS(on) -- Tc
120
80
160
40
0160140
ID=0.1A, VGS=20V
ID=0.1A, VGS=10V
40--40 120800 20 10060--20
ITR01574
0
RDS(on) -- VGS
160
120
80
40
012 14842106
ITR01576
y
fs -- ID
0.01
5
3
2
0.1
7
3
2
5
0.01 70.1
7325325
Tc=25°C
VDS=10V
20V
ITR01577
y
fs -- ID
0.01
5
3
2
0.1
7
5
3
2
5
0.01 70.1
7325325
V
DS=20V
Tc= --25°C
25°C
75°C
Tc=25°C
ID=0.1A
ID=1mA
VDS=10V
ITR01572
--60
VGS(off) -- Tc
5
4
3
2
1
016040--40 120800 20 10060 140--20
100µs
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward Transfer Admittance,
y
fs -- S
Drain Current, ID -- A
Forward Transfer Admittance,
y
fs -- S
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Case Temperature, Tc -- °C
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Static Drain-to-Source
On-State Resistance, RDS(on) --
Tc=25°C
Single pulse
Cutoff Voltage, VGS(off) -- V
Case Temperature, Tc -- °C
2SK1458LS
No.3461-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.
PS
2.4
1.6
2.0
1.2
0.4
0.8
00 20 40 60 80 100 120 140 160
PD -- Ta
Ta=25°C
ITR01580
16
24
20
12
8
4
00 20 40 60 80 100 120 140 160
PD -- Tc
ITR01581
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
Case Temperature, Tc -- °C
No heat sink