2SK1458LS - Sanyo Semiconductor

2SK1458LS

No.3461-1/4

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSS 900 V

Gate-to-Source Voltage VGSS ±30 V

Drain Current (DC) ID0.2 A

Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 0.4 A

Allowable Power Dissipation PD2.0 W

Tc=25°C20W

Channel Temperature Tch 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 900 V

Zero-Gate Voltage Drain Current IDSS VDS=900V, VGS=0 1.0 mA

Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0 ±100 nA

Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.0 V

Forward T ransfer Admittance yfsVDS=20V, ID=0.1A 0.08 0.15 S

Marking : K1458 Continued on next page.

Features

•Low ON-resistance.

•Ultrahigh-speed switching.

•Micaless package facilitating mounting.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN3461B

2SK1458LS

Package Dimensions

unit : mm

2078C

[2SK1458LS]

N3001 TS IM TA-3433 / 61099 TH (KT) / 72597 TS (KOTO) / 6131 JN (KOTO)

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

1 : Gate

2 : Drain

3 : Source

SANYO : TO-220FI(LS)

16.0

14.0

3.6

3.5

7.2

16.1

0.7

2.55 2.55

2.4

1.2

0.9

0.75

0.6

1.2

4.5 2.8

123

10.0 3.2

2SK1458LS

No.3461-2/4

Continued from preceding page. Ratings

Parameter Symbol Conditions min typ max Unit

Static Drain-to-Source On-State Resistance RDS(on) ID=0.1A, VGS=10V 50 70 Ω

Input Capacitance Ciss VDS=20V, f=1MHz 45 pF

Output Capacitance Coss VDS=20V, f=1MHz 25 pF

Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 10 pF

Turn-ON Delay Time td(on) ID=0.1A, VGS=10V, VDD=200V, RGS=50Ω10 ns

Rise T ime trID=0.1A, VGS=10V, VDD=200V, RGS=50Ω15 ns

Turn-OFF Delay Time td(off) ID=0.1A, VGS=10V, VDD=200V, RGS=50Ω30 ns

Fall T ime tfID=0.1A, VGS=10V, VDD=200V, RGS=50Ω 180 ns

Diode Forward Voltage VSD IS=0.2A, VGS=0 1.8 V

(Note) Be careful in handling the 2SK1458LS because it has no protection diode between gate and source.

Switching Time Test Circuit

ID -- VGS

0.4

0.3

0.1

0.2

2681014124

ID -- VDS

0.24

0.20

0.16

0.12

0.08

0.04

1248 242016

VGS=10V

ITR01568

ITR01570

VDS=20V

Tc=25°C

75°C

120°C

ID -- VDS

0.4

0.5

0.3

0.2

0.1

3010 20 605040

VGS=10V

ITR01569

ITR01571

--60

ID -- Tc

0.4

0.3

0.2

0.1

040--40 12080 1600 20 10060 140--20

VGS=10V

VDS=20V

10V

Drain Current, ID -- A

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C

Drain Current, ID -- A

P.W.=1µs

D.C.≤0.5%

P.G. RGS

50Ω

ID=0.1A

RL=2kΩ

VDD

200V

VGS

10V VOUT

2SK1458LS

No.3461-3/4

A S O

0.1

0.01

1.0

10 100 1000

23 57 2 235723 57

ITR01579

SW Time -- ID

100

1000

255377

0.1 2537

1.00.01

VDD=200V

VGS=10V

P.W.=1µs

D.C.≤0.5%

td(on)

td(off)

ITR01573

<50µs

1ms

10ms

DC operation

Operation in

this area is

limited by RDS(on).

ID=0.2A

IDP=0.4A

Ciss, Coss, Crss -- VDS

1.0

100

81216202428324

ITR01578

VGS=0

f=1MHz

Ciss

Coss

Crss

ITR01575

--60

RDS(on) -- Tc

120

160

0160140

ID=0.1A, VGS=20V

ID=0.1A, VGS=10V

40--40 120800 20 10060--20

ITR01574

RDS(on) -- VGS

160

120

012 14842106

ITR01576



fs -- ID

0.01

0.1

0.01 70.1

7325325

Tc=25°C

VDS=10V

20V

ITR01577



fs -- ID

0.01

0.1

0.01 70.1

7325325

DS=20V

Tc= --25°C

25°C

75°C

Tc=25°C

ID=0.1A

ID=1mA

VDS=10V

ITR01572

--60

VGS(off) -- Tc

016040--40 120800 20 10060 140--20

100µs

Drain-to-Source Voltage, VDS -- V

Ciss, Coss, Crss -- pF

Drain Current, ID -- A

Switching Time, SW Time -- ns

Drain Current, ID -- A

Forward Transfer Admittance, 

fs -- S

Drain Current, ID -- A

Forward Transfer Admittance, 

fs -- S

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Case Temperature, Tc -- °C

Gate-to-Source Voltage, VGS -- V

Static Drain-to-Source

On-State Resistance, RDS(on) -- Ω

Static Drain-to-Source

On-State Resistance, RDS(on) -- Ω

Tc=25°C

Single pulse

Cutoff Voltage, VGS(off) -- V

Case Temperature, Tc -- °C

2SK1458LS

No.3461-4/4

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of November, 2001. Specifications and information herein are subject

to change without notice.

2.4

1.6

2.0

1.2

0.4

0.8

00 20 40 60 80 100 120 140 160

PD -- Ta

Ta=25°C

ITR01580

00 20 40 60 80 100 120 140 160

PD -- Tc

ITR01581

Ambient Temperature, Ta -- °C

Allowable Power Dissipation, PD -- W

Case Temperature, Tc -- °C

No heat sink