ee Discrete Power & Signal FAIRCHILD Technologies ee SEMICONDUCTOR m July 1998 FMMT560 / FMMT560A B SuperSOT-3 (SOT-23) NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Abso I ute M axi m u m Rati ngs Ta = 25C unless otherwise noted Symbol Parameter FMMTS560/FMMTS60A Units Vceo Collector-Emitter Voltage 60 Vv Veso Collector-Base Voltage 80 Vv VeBo Emitter-Base Voltage 5 Vv Ic Collector Current - Continuous 2 A Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal CharacteristicS Ta cos:cunessonennse roves Max Symbol Characteristic Units FMMT560/FMMT560A Pp Total Device Dissipation 500 mW Rea Thermal Resistance, Junction to Ambient 250 CAN 1998 Fairchild Semiconductor Corporation Page 1 of 2 immtS60.|wpPrNA 7/1098 RevB VO09S_LIWINA/O9SLINWA NPN Low Saturation Transistor (continued) Electrical Characteristics Tr = 25C unless oitenuse noted Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS BVcEo Collector-Emitter Breakdown Voltage |i, = 10 mA 60 BY cro Collector-Base Breakdown Voltage Ig = 100 pA 80 BVeRo Emitter-Base Breakdown Voltage le =100 pA 5 leno Collector Cutoff Current Vep = 30 V 100 nA Vop = 30 V, Ta=100C 10 uA leBo Emitter Cutoff Current Ver = 4V 100 nA ON CHARACTERISTICS* hee DC Current Gain I = 100 MA, Vee =2V 70 - Ic=500mA, Vee =2V FMMT560 100 | 300 FMMT560A | 250 | 550 lc=1A,Vce=2V 80 lc=2A,VceE=2V 40 Voce (sat) Collector-Emitter Saturation Voltage lc =1A,lp=100 mA 300 mv Ic = 2 A, Ig=200 mA FMMT560 350 FMMTS560A 300 VBEteat) Base-Emitter Saturation Voltage lc=1A,Ip=100mA 1.25 VBE(on) Base-Emitter On Voltage lc=1A, Vce=2V 1 SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance Veg = 10 V, le = 0, f= 1MHz 30 pF fr Transition Frequency Ic = 100 MAVce =5 V,f=100MHz| 75 - *Pulse Test: Pulse Width < 300 is, Duty Cycle < 2.0% 1998 Fairchild Semiconductor Corporation Page 2of 2 immtS60.|wpPrNA 7/1098 RevB VO09S_LIWINA/O9SLINWA