LESHAN RADIO COMPANY, LTD.
VH7–1/4
V7d
MC74VHC1G07
V7d
1
3
2
4
5
TSOP–5/SOT–23/SC–59
DT SUFFIX
CASE 483
The MC74VHC1G07 is an advanced high speed CMOS buffer with open drain output fabricated with silicon gate CMOS technology. It
achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer and an open drain output which provides the capability to set the
output switching level. This allows the MC74VHC1G07 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V
using an external resistor and power supply.
The MC74VHC1G07 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
• High Speed: t PD = 3.8 ns (Typ) at V CC = 5 V
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FET = 105; Equivalent Gate = 26
SC–88A / SOT–353/SC–70
DF SUFFIX
CASE 419A
1
3
2
4
5
MARKING DIAGRAMS
Pin 1
d = Date Code
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
PIN ASSIGNMENT
1NC
2 IN A
3 GND
4 OUT Y
5V
CC
FUNCTION TABLE
Inputs Output
AY
LL
HZ
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
Noninverting Buffer with
Open Drain Output
LESHAN RADIO COMPANY, LTD.
VH7–2/4
MC74VHC1G07
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V CC DC Supply V oltage 2.0 5.5 V
V IN DC Input V oltage 0.0 5.5 V
V OUT DC Output Voltage 0.0 7.0 V
T AOperating Temperature Range – 55 + 125 °C
t r ,t fInput Rise and Fall T ime V CC = 3.3 ± 0.3 V 0 100 ns/V
V CC = 5.0 ± 0.5 V 0 20
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction Time, Time,
Temperature °C Hou rs Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
NORMALIZED FAILURE RATE
Figure 3. Failure Rate vs. Time
Junction Temperature
1
1 10 100 1000
MAXIMUM RATINGS
Symbol Parameter Value Unit
V CC DC Supply Voltage – 0.5 to + 7.0 V
V IN DC Input Voltage – 0.5 to +7.0 V
V OUT DC Output Voltage – 0.5 to +7.0 V
I IK Input Diode Current –20 mA
I OK Output Diode Current V OUT < GND; V OUT > V CC +20 mA
I OUT DC Output Current, per Pin + 25 mA
I CC DC Supply Current, V CC and GND +50 mA
P DPower dissipation in still air SC–88A, TSOP–5 200 mW
θ JA Thermal resistance SC–88A, TSOP–5 333 °C/W
T LLead Temperature, 1 mm from Case for 10 s 260 °C
T JJunction Temperature Under Bias + 150 °C
T stg Storage temperature –65 to +150 °C
V ESD ESD Withstand Voltage Human Body Model (Note 2) >2000 V
Machine Model (Note 3) > 200
Charged Device Model (Note 4) N/A
I LATCH–UP Latch–Up Performance Above V CC and Below GND at 125°C (Note 5) ± 500 mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
TIME, YEARS
LESHAN RADIO COMPANY, LTD.
VH7–3/4
DC ELECTRICAL CHARACTERISTICS V CC T A = 25°C T A
<
85°C
–55°C
<
T
A
<
125°C
Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
V IH Minimum High–Level 2.0 1.5 1.5 1.5 V
Input Voltage 3.0 2.1 2.1 2.1
4.5 3.15 3.15 3.15
5.5 3.85 3.85 3.85
V IL Maximum Low–Level 2.0 0.5 0.5 0.5 V
Input Voltage 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35
5.5 1.65 1.65 1.65
V OH Minimum High–Level V IN = V IH or V IL 2.0 1.9 2.0 1.9 1.9 V
Output Voltage I OH = – 50 µA 3.0 2.9 3.0 2.9 2.9
V IN = V IH or V IL 4.5 4.4 4.0 4.4 4.4
V IN = V IH or V IL
I OH = –4 mA 3.0 2.58 2.48 2.34
I OH = –8 mA 4.5 3.94 3.80 3.66
V OL
Maximum Low–Level
V IN = V IH or V IL 2.0 0.0 0.1 0.1 0.1 V
Output Voltage I OL = 50 µA 3.0 0.0 0.1 0.1 0.1
V IN = V IH or V IL 4.5 0.0 0.1 0.1 0.1
V IN = V IH or V IL
I OL = 4 mA 3.0 0.36 0.44 0.52
I OL = 8 mA 4.5 0.36 0.44 0.52
I IN Maximum Input
V
IN
= 5.5 V or GND 0 to5.5
±0.1 ±1.0 ±1.0 µA
Leakage Current
I CC
Maximum Quiescent
V
IN
= V
CC
or GND 5.5 2.0 20 40
µA
Supply Current
I OPD Maximum Off–state V OUT = 5.5 V 0 0.25 2.5 5.0 µA
Leakage Current
MC74VHC1G07
AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns
T A = 25°C T A
<
85°C
–55°C to 125°C
Symbol
Parameter Test Conditions Min Typ Max Min Max Min Max Unit
t PZL Maximum Output V CC = 3.3 ± 0.3 V C L = 15 pF 5.0 7.1 8.5 10.0 ns
Enable T ime, R L = R I = 500 Ω C L = 50 pF 7.5 10.6 12.0 14.5
Input A to Y V CC = 5.0 ± 0.5 V C L = 15 pF 3.8 5.5 6.5 8.0
R L = R I = 500 Ω C L = 50 pF 5.3 7.5 8.5 10.0
t PLZ Maximum Output V CC = 3.3 ± 0.3 V C L = 50 pF 7.5 10.6 12.0 14.5 ns
Disable T ime R L = R I = 500 Ω
V CC = 5.0 ± 0.5 V C L = 50 pF 5.3 7.5 8.5 10.0
R L = R I = 500 Ω
C IN Maximum Input 4 10 10 10 pF
Capacitance
Typical @ 25°C, V CC = 5.0 V
C PD Power Dissipation Capacitance (Note 6) 18 pF
6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. A verage operating current can be obtained by the equation: I CC(OPR) = C PD
x
V CC
x
f in + I CC
.
C PD is used to determine the no–
load dynamic power consumption; P D = C PD
x
V CC 2
x
f in + I CC
x
V CC .
LESHAN RADIO COMPANY, LTD.
VH7–4/4
MC74VHC1G07
DEVICE ORDERING INFORMATION
Device Nomenclature
Device Order
Number
Logic
Circuit
Indicator
Temp
Range
Identifier Technology
Device
Function Package
Suffix Tape and
Reel Suffix
Package Type
(Name/SOT#/
Common Name)
Tape and
Reel Size
MC74VHC1G07DFT1
MC 74 VHC1G 07 DF T1
SC–70/SC–88A/
178 mm (7 in)
SOT–353
3000 Unit
MC74VHC1G07DFT2
MC 74 VHC1G 07 DF T2
SC–70/SC–88A/
178 mm (7 in)
SOT–353
3000 Unit
MC74VHC1G07DFT4
MC 74 VHC1G 07 DF T4
SC–70/SC–88A/
330 mm (13 in)
SOT–353
10,000 Unit
MC74VHC1G07DTT1
MC 74 VHC1G 07 DT T1
SOT–23/TSOPS/
178 mm (7 in)
SC–59
3000 Unit
MC74VHC1G07DTT3
MC 74 VHC1G 07 DT T3
SOT–23/TSOPS/
330 mm (13 in)
SC–59
10,000 Unit
Figure 5. Switching Waveforms
Figure 4. Output Voltage Mismatch Application
C L = 50 pF equivalent (Includes jig and probe capacitance)
R L = R 1 = 500 Ω or equivalent
R T = Z OUT of pulse generator (typically 50 Ω)
Figure 6. Test Circuit
Figure 7. Complex Boolean Functions
Figure 8. LED Driver
Figure 9. GTL Driver
A
