ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V: RDS(on) = 0.045 : ID = -7.5A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT223 package APPLICATIONS * DC-DC converters * Power management functions * Relay and soleniod driving PINOUT * Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP3A16GTA 7" 12mm 1000 units ZXMP3A16GTC 13" 12mm 4000 units Top View DEVICE MARKING * ZXMP 3A16 ISSUE 2 - JULY 2004 1 ZXMP3A16G ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate-Source Voltage V GS 20 V Continuous Drain Current (V GS = -10V; T A =25C)(b) (V GS = -10V; T A =70C)(b) (V GS = -10V; T A =25C)(a) ID -7.5 -6.0 -5.4 A Pulsed Drain Current (c) I DM -24.9 A Continuous Source Current (Body Diode) (b) IS -3.2 A Pulsed Source Current (Body Diode)(c) I SM -24.9 A Power Dissipation at T A =25C (a) Linear Derating Factor PD 2.0 16 W mW/C Power Dissipation at T A =25C (b) Linear Derating Factor PD 3.9 31 W mW/C Operating and Storage Temperature Range T j :T stg -55 to +150 C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R JA 62.5 C/W Junction to Ambient (b) R JA 32.2 C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature. ISSUE 2 - JULY 2004 2 ZXMP3A16G TYPICAL CHARACTERISTICS Max Power Dissipation (W) -ID Drain Current (A) RDS(on) 10 Limited 1 DC 1s 100m 10m 100ms 10ms Single Pulse Tamb=25C 1ms 100s 1 10 -VDS Drain-Source Voltage (V) 2.0 1.6 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 140 160 Temperature (C) Derating Curve Safe Operating Area 60 Tamb=25C MaximumPower (W) Thermal Resistance (C/W) 70 50 40 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 0 100 1m D=0.1 10m 100m 1 10 100 Single Pulse Tamb=25C 100 10 1 100 1m 1k 10m 100m 1 10 100 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ISSUE 2 - JULY 2004 3 1k ZXMP3A16G ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage V (BR)DSS -30 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(3) g fs 9.2 Input Capacitance C iss 970 pF Output Capacitance C oss 169 pF Reverse Transfer Capacitance C rss 116 pF Turn-On Delay Time t d(on) 3.8 ns Rise Time tr 6.1 ns Turn-Off Delay Time t d(off) 35 ns Fall Time tf 19 ns Gate Charge Qg 12.9 nC Total Gate Charge Qg 24.9 nC Gate-Source Charge Q gs 2.67 nC Gate-Drain Charge Q gd 3.86 nC Diode Forward Voltage (1) V SD -0.85 Reverse Recovery Time (3) t rr 21.2 ns Reverse Recovery Charge (3) Q rr 18.7 nC STATIC V I D =-250A, V GS =0V -1 A V DS =-30V, V GS =0V 100 nA -1.0 V V GS =20V, V DS =0V I =-250A, V DS = V GS D 0.045 0.070 V GS =-10V, I D =-4.2A V GS =-4.5V, I D =-3.4A S V DS =-15V,I D =-4.2A DYNAMIC (3) V DS =-15V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =-15V, I D =-1A R G =6.0, V GS =-10V V DS =-15V,V GS =-5V, I D =-4.2A V DS =-15V,V GS =-10V, I D =-4.2A SOURCE-DRAIN DIODE -0.95 V T J =25C, I S =-3.6A, V GS =0V T J =25C, I F =-2A, di/dt= 100A/s NOTES (1) Measured under pulsed conditions. Width 300 s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JULY 2004 4 ZXMP3A16G TYPICAL CHARACTERISTICS -ID Drain Current (A) 4V T = 150C 3.5V 3V 2.5V 10 -ID Drain Current (A) 10V T = 25C 2V 1 -VGS 0.1 1.5V 0.01 0.1 1 4V 3.5V 3V 2.5V 2V 1 1.5V -VGS 0.1 0.01 10 10V 10 -VDS Drain-Source Voltage (V) 0.1 1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.6 T = 150C T = 25C 1 -VDS = 10V 0.1 1 2 VGS = -10V ID = -4.2A 1.4 Normalised RDS(on) and VGS(th) -ID Drain Current (A) 10 RDS(on) 1.2 1.0 VGS(th) 0.8 VGS = VDS ID = -250uA 0.6 0.4 -50 3 0 50 100 150 -VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics Normalised Curves v Temperature T = 25C -ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance () 100 1.5V 100 -VGS 2V 10 2.5V 3V 1 3.5V 4V 0.1 10V 0.01 0.01 0.1 1 T = 150C 10 0.1 0.010.0 10 -ID Drain Current (A) On-Resistance v Drain Current T = 25C 1 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage ISSUE 2 - JULY 2004 5 ZXMP3A16G CHARACTERISTICS C Capacitance (pF) VGS = 0V f = 1MHz 1200 1000 CISS 800 COSS 600 CRSS 400 200 0 0.1 1 10 -VDS - Drain - Source Voltage (V) -VGS Gate-Source Voltage (V) 10 1400 Capacitance v Drain-Source Voltage -ID = 4.2A 8 6 4 2 -VDS = 15V 0 0 5 10 15 20 25 Q - Charge (nC) Gate-Source Voltage v Gate Charge Current Regulator Same as D.U.T 50k QG 12V 0.2F -10V 0.3F QGS VDS QGD IG D.U.T VG VGS ID Charge Gate Charge Test Circuit Basic Gate Charge Waveform RD VGS 10% VGS VDS RG 90% VDS -10V td(on) tr td(off) Vcc Pulse Width < 1S Duty Factor 0.1% tf Switching Time Waveforms Switching Time Test Circuit ISSUE 2 - JULY 2004 6 ZXMP3A16G PACKAGE OUTLINE PAD LAYOUT DETAILS PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - (c) Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JULY 2004 7