BAS70TW/ADW/CDW/SDW
SURFACE MOUNT SCHOTTKY DIODE ARRAYS
1
2
3
4
5
6
1
2
3
4
5
6
FEATURES
APPLICATIONS
MAXIMUM RATINGS (Per Diode)
Rating Symbol Value Units
These devices feature electrically-isolated Schottky diodes connected
in various configurations housed in a very small SOT-363 (SC70-6L)
Maximum forward voltage @ 1.0mA of 0.41V
Also available in lead-free plating (100% matte tin finish)
Maximum leakage current @ 50V of 100nA
Reverse voltage rating of 70V
Rail-to-rail ESD protection
Overshoot and undershoot switching control
Mobile phones and accessories
Video game consoles connector ports
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Non-repetitive Peak Forward Current, t = 1sec, Square Wave
Total Power Dissipation (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
3/23/2005 Page 1 www.panjit.com
70 V
V70
mA200
A0.6
225 mW
°C-55 to +125
°C-55 to +125
V
V
I
I
P
T
T
RRM
R
F
FSM
tot
stg
T = 25°C Unless otherwise noted
J
J
Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in.
SOT- 363
THERMAL CHARACTERISTICS
Characteristic Symbol Units
thja
Thermal Resistance, Junction to Ambient 556
Value
R°C/W
Marking Code: A72
Various
Configurations
(See Diagrams
Below)
Marking Code: A70 Marking Code: A73 Marking Code: A74
BAS70TW BAS70ADW BAS70CDW BAS70SDW
123
654
123
654
Isolated Triple
123
654
123
654
123
654
123
654
Isolated Triple
123
654
123
654
123
654
123
654
Common Cathode
123
654
123
654
123
654
123
654
Common Anode
123
654
12
3
654
123
654
12
3
654
Series
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3/23/2005 Page 2
ELECTRICAL CHARACTERISTICS (Per Diode)
Parameter Symbol Min Units
Breakdown Voltage (Note 1)
Tj = 25°C Unless otherwise noted
Conditions Typ Max
VBR BR
I =
Forward Voltage (Note 1) VF
I =
I =
F
F
Reverse Leakage Current (Note 1) IRR
V =
Junction Capacitance CD0Vdc Bias, f =1 MHz
Reverse Recovery Time
(See Figure 1) trr
I = 10mA, I = 10mA
R = 100 Ohms;
measured at I = 1mA
FR
L
100 uA
1.0 mA
10 mA
50 V
70 - - V
- - 0.41
- - 0.75 V
- 100 nA-
2.0 pF- 1.25
-5ns-
BAS70TW/ADW/CDW/SDW
+10 V
50 ΩOutput
Pulse
Generator
50 ΩIn p u t
Sampling
O scilloscope
DUT
?
820 Ω
2.0 kΩ0.1 µF
IF
100 µH
0.1 µF
+10 V
50 ΩOutput
Pulse
Generator
50 ΩIn p u t
Sampling
O scilloscope
DUT
?
820 Ω
2.0 kΩ0.1 µF
IF
100 µH
0.1 µF
Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (IF) to 10mA
2. Input pulse is adjusted to IR(peak) is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
Note 1: Short duration (<300us) test pulse to minimize self heating
Rrec
I =
F15 mA 1.0--
Fig. 3. Typical Reverse CharacteristicsFig. 2. Typical Forward Characteristics
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3/23/2005 Page 3
Fig. 4. Typical Capacitance
TYPICAL CHARACTERISTIC CURVES (Per Diode)
BAS70TW/ADW/CDW/SDW
0.001
0.010
0.100
1.000
10.000
100.000
0 20406080
Reverse Voltage, VR (V)
Reverse Current, IR (uA)
TJ = 25°C
TJ = 75°C
TJ = 125°C
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
Forw ard Voltage , VF (V)
Forward Current, IF (mA)
TJ = 25°C
TJ = 75°C
TJ = 125°C
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
0 102030405060
Re ve r s e V o ltag e , V R (V)
Capacitance, C (pF
TJ = 25°C
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3/23/2005 Page 4
ORDERING INFORMATION
BAS70xxx T/R7 - 7" reel, 3K units per reel
BAS70xxx T/R13 - 13" reel, 10K units per reel
Copyright PanJit International, Inc 2005
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
BAS70TW/ADW/CDW/SDW