NJG1301 TRANSMITTING GaAs POWER AMPLIFIER IC W@ GENERAL DESCRIPTION NJG1301 is a GaAs MMIC designed mainly for final stage power amplifier of PHS in Japan. It has input and output matching circuits internally, and it features low voltage and high efficiency operation.21dBm output power is easily available with very low distortion. Two types of small Plastic mold Package are adopted. We APPLICATIONS @ PHS, Digital cordless phone @ Wireless LAN etc. W@ FEATURES @ Low voltage operation (Vpp=3.0V) @ Input and output internal matching circuits @ Low distortion (Pacp=-60dBc Typ.@1.9GHz,21dBm) @ Low current consumption (Ipp=185mA Typ.@1.9GHz,21dBm) @ Reduction of parasitic oscillation M PACKAGE OUTLINE NJG1301V Se NJG1301E @V type: SSOP14 Maximum Power Dissipation: 600mW(Tj=150C PCB: 24*30*1.0mm FR4) @E type: EMP 14 Maximum Power Dissipation: 1000mW(Tj=150C ,PCB: 24*30*1.0mm FR4) @ PIN CONFIGURATION . E Type (Top View) V Type (Top View) mr r ) ra Pin Connection i C Bip sas OE 2.GN . 7 . | gi 3.Veai 10.Vope BL Eq i] =4GND 11.GND a [5 | 10} 5.Vace 12.Vpo1 | (e oy 6.GND 13.GND 7.GND 14.GND (6 | Ge e fr 9 Tell EE! el Ee] New Japan Radio Co, Ld. Pin Connection 1.GND 2.RFin 3.Vea1 4.Vece 5.GND 6.GND 7,.GND 8.GND 9.RF out 10.Vpp2 11.GND 12.Voo1 43.GND 14.GNDNJG1301 M ABSOLUTE MAXIMUM RATINGS Z,=Z.=500hm, Ta=25C) PARAMETER SYMBOL CONDITIONS RATINGS UNIT Drain Voltage Vopi A Vea12=-0.9V 6 V Gate Voltage Voea1:Vece | Voo1.2=3.0V -4 V input Power Pin Vop12=3.0V, Vegi 2=-0.9V 10 dBm Power Dissipation Pp 24*30*1.0mm PCB: FR4, T=150C (V Type) 600 mw (E Type) 1000 Operating Temperature | Top -30~+85 c Storage Temperature | Tstg -40~+150 Cc ELECTRICAL CHARACTERISTICS (f=1.9GHz,Z,=Z,=50ohm, Ta=25C) PARAMETER SYMBOL CONDITIONS MIN TYP | MAX | UNIT Operating Frequency | freq Vop1,2=3.0V 1.89 - 1.92 | GHz Drain Voltage Vobp1,2 2.9 3.0 5.0 |V Gate Voltage Veoi2 Vo001.2=3.0V, liae=1 70mA -1.25 -0.9 -0.6 V Idle Current *4 lide Voo1,2=3.0V, No RF Signal 165 170 175 |mA Operating Current *1 lbp Pou=21dBm, Vpp1 2=3.0V 170 185 195 | mA Gate Current *2 lec Pou=21dBm,Vpp; 2=3.0V -150 -70 - uA Small Signal Gain Gain Vop1,2=3.0V, lite=170MA 20 23 26 | dB Gain Flatness Gaat Vo01,223-0V, lige=1 70MA 0.0 0.5 1.0 | dB Pout at1dB Pies Vop1,2=3.0V 21 22 - dBm Compression Adjacent Channel Pracpt Pou=21dBm,offset=600kHz, - -60 | -55 | dBc Leakage Power @ Pini 72/4 QPSK,Vpp01,2=3.0V Adjacent Channel Pacpa Pou=21dBm,offset=900kHz, - -65 -60 | dBc Leakage Power @ Pin; 70/4 QPSK,Vpp1,2=3.0V Harmonics Psp Pou=21dBm,Vpp1,2=3.0V - 35 | -30 | dBe Input VSWR VSWR | Vp 1.2=3.0V - - 2.2 Load VSWR Tolerance Pou=21dBm,Vpp12=3.0V Parasitic Oscillation for Load VSWR=4:1,All Phase Fundamental Signal Level : S-60dBc *1 > Voo1 Terminal and Vpp2 Terminal Total Current. *2 : Vea1 Terminal and Vege Terminal Total Current. New Japan Radio Co.,Ltd.NJG1301 J MTYPICAL CHARACTERISTICS Gain (dB) Gain vs. Frequency = = =. = 3, (V,,73.0V, | =170mA, V_=-0.74V, T =25C ) 40 36 oN aL 0.0 1.0 2.0 Frequency (GHz) 3.0 P ep vs. Operating Current vs. Vip (P_,221dBm ,f=1.9GHz, T =25C) -50 Veo 2-9 55 | ~j 2.0 zg 3.3V a! ss rm 5.0V -70 Pe, 4.00 75 140 6 150='s160,'ss170'wBOCSCAKSCsi201D Galn (dBm) Operating Current lo (mA) Gain, P ep vs. Ambient Temperature (V,,23.0V, 1,51 7omA, P =21dBm, f=1.9GHz) 28 $5 26 Pe nn ene ~ Lent 8 24 sy 60 * re 2 Gan | 22 20 65 40 20 Q 20 40 60 80 Ambient Temperature qT, ("C) Operating Current | (mA) Output Power, P cp vs. Input Power (V,,23-0V, | =170mA, f1.9GHz, T,=28C) 26 -20 24 > - = -30 i 22 - zz 40 t /| a $ 20 ~50 g J, & P z 18 ty ZL Pree -80 2 o /| J 16 ZL 7 -70 14 BO 10 5 Q 5 10 Input Power P. {dBm} Operating Current, Gate Current vs. Input Power (V,,,=3.0V, |. ,,2170mA, f=1.9GHz ,T =25C) 5 3 10 250 | 200 4 0 << Pee 150 0 100 -20 10 5 0 5 410 Input Power PL (dBm) (dBc) Pp acp Gate Current | las (pA} Operating Current vs. Ambient Temperature Operating Current | (mA) (Vp73-0V, Viste WIN \ 180 =170mA, Pane tdBm, f=1.9GHz) 190 175 40 -20 0 20 40 60 80 Ambient Temperature T (Cc) New Japan Radio Co, Ltd.NJG1301 HTYPICAL CHARACTERISTICS Gain vs. PHS Band Frequency IS, Is. vs. Frequency 2 = = =96 (V,,,23.0V, |, =170mA, V_ .=-0.71V, T,=25C) (V,579-0V, | po 170mA, T,=25C) 26 20 24 40 g 23 G 0 = 5 ot RA | 2 > 10 o NT 21 -20 3 . aN 20 0.0 4.0 20 2.0 189 4.90 1.91 1.92 Frequancy f (GHz) Frequency f (GHz) Output Power,Total Current vs. Input Power Output Power,P.A.E. vs. Input Power (V,,=3V, f=1.9GHz, T =25C ) . (V,,=3V, f=1.9GHz, T =25C ) 25 70 20 60 = = = E - E48 so > & q 3 e i = i 3 a 4 a 10 ao 2 = 5 u = 5 a 5 2 8 a S a 3 3 3 $ g Fe oa 20 3 o a 8 10 10 Oo 25 2000-1510 $ 0 5 40 25-2015 0 3 0 5 10 Input Power PL (dBm) Input Power PL {d8m) Harmonic Spectrum Output Spectrum (Suppressed Level for Fundamental Signal Level) (V0 #3.0V, Lae=170mA. Pou 21dBm, Ta = 25C) (Pour 21dBm. Vo #3.0V, Ine *170mA, Ta = 25C) ATTEN 10dB ATTEN 30dB RL OdBm 10dB/ RL 20.0dBm 10dB/ RBW 1.0kHz = VBW l0kH SWP 10.2ss RBW 10MH: VBW LOMHz SWP [80ms All adjacent channel leakege power used in these characteristics are those of 600KHz offset for fundamental wave at PHS operating condition( z/4 QPSK) New Japan Radio Co, Lid.NJG1301 M BLOCK DIAGRAM V Type Mt GND GND V, ML ELL Go io a oF GND Veo: GND Vez GND GND GND GND Voo1 GND Voo2 RF out GND Ie] [] Ti fi ft tl el MU UUUU GND sRF,,, Veo: Veae GND GND GND New Japan Radio Co,Ltd.MRECOMMENDED CIRCUITS V Type @ RFino Tt GND iam RF in po GND man Vee ++[ | { } oN (-0.5~-1.2v) [org ar Vect Voos 2 | (3.0~5. ov) 1520 @VeqS-2V 75 exo | t+] PRS ttt co Fore ce Wea Vooz LI Gp Tay 7 pts GND pS tH GND RF oe [et ORF out C1: 1000pF C2: 33pF C3:1 uF C4: 5nH E Type @ pita GND Liam RFino [ee eno | Fy \ / | Veo Orp_>_[ Lj LL aa Voo (-0, 5~=1. 2V) oF me Neos Yon ar ae (3. 0~5. OV) Ipp20 @VaqS-2V _ OS me 03 Cl 5 pee 1 Veo GND GND 7 4 \/ 002 cz > cir Be O pte RFon t+ RF axe tHe GND By C1: 1000pF C2: 33pF C3:1 4 F C4: 10nH New Japan Radio Co, Ltd.NJG1301 MI RECOMMENDED PCB DESIGN V Type TOP VIEW PCB: FR4, t=0.2mm CAPACITOR: MURATA GRM39Series INDUCTOR: TAIYOYUDEN HK2125Series TOP VIEW 30mm RFin | ] PCB: FR4, t=0.5mm CAPCITOR : 1000pF MURATA GRM39Series INDUCTOR: TAIYO YUDEN HK2125Series The reflow method recommended to install this device to PCB New Japan Radio Co,.Lid.NJG1301 M RECOMMENDED CIRCUIT TO PRODUCE NEGATIVE VOLTAGE +3.0V -3.0V I I. 10K Q& Trimmer Resistance 8} t7t 16} 15 10 4 F . (7K Q) NJU7660 / @ Tee 10 WF Vee (-0.9Vtyp.) New Japan Radio Co,Ltd.NJG1304 MI PACKAGE OUTLINE EMP 14 SSOP 14 EE= [eases UNIT :mm Caution on using the products A Gas is used in this product. A GaAs is a harmful material. Don't eat or in the mouth. Don't dispose in fire or break up the products. Don't make a gas or a powdered with the chemical reaction. in the case of wasting the products, please obey the relation rule in the each country. This product may be broken with static electric discharge or serge voltage.Therefore,please note a handling. The other caution item The product specifications and descriptions listed in this catalog are subject to change at any time, without notice. We don't take upon ourselves the responsibilities that infringe on other peoples rights of a patents bringing about the information and drawing in this catalog. It is not purpose to be equipped with the system needs a high reliability as air system, submarine cable system, atomic energy control system and medical instrument for keeping life. If you think the above system, please ask for the sales office before. New Japan Radio Co,Ltd.