Original Creation Date: 03/21/97
Last Update Date: 05/04/01
Last Major Revision Date: 04/20/01
MNLM2941-X REV 4A1 MICROCIRCUIT DATA SHEET
LOW DROPOUT ADJUSTABLE REGULATOR
General Description
The LM2941 positive voltage regulator features the ability to source 1A of output current
with a typical dropout voltage of 0.5V and a maximum of 1V over the entire temperature
range. Furthermore, a quiescent current reduction circuit has been included which reduces
the ground pin current when the differential between the input voltage and the output
voltage exceeds approximately 3V. The quiescent current with 1A of output current and an
input-output differential of 5V is therefore only 30mA. Higher quiescent currents only
exist when the regulator is in the dropout mode (Vin - Vout < 3V).
Designed also for vehicular applications, the LM2941 and all regulated circuitry are
protected from reverse battery installations or two-battery jumps. During line transients,
such as load dump when the input voltage can momentarily exceed the specified maximum
operating voltage, the regulator will automatically shut down to protect both the internal
circuits and the load. Familiar regulator features such as short circuit and thermal
overload protection are also provided.
NS Part Numbers
LM2941J-MLS
LM2941J-QMLV
LM2941J/883
LM2941WG-QMLV
LM2941WG/883
Industry Part Number
LM2941
Prime Die
LM2941
Controlling Document
SEE FEATURES SECTION
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MICROCIRCUIT DATA SHEET
MNLM2941-X REV 4A1
Features
- Output voltage adjustable from 5V to 20V
- Dropout voltage typically 0.5V @ Io = 1A
- Output current in excess of 1A
- Trimmed reference voltage
- Reverse battery protection
- Internal short circuit current limit
- Mirror image insertion protection
- TTL, CMOS compatible ON/OFF switch
- CONTROLLING DOCUMENT
LM2941J-QMLV 5962-9166701VEA
LM2941J/883 5962-9166701QEA
LM2941WG-QMLV 5962-9166701VYA
LM2941WG/883 5962-9166701QYA
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MICROCIRCUIT DATA SHEET
MNLM2941-X REV 4A1
(Absolute Maximum Ratings)
(Note 1)
Input Voltage (Survival Voltage < 100mS) 60V
Internal Power Dissipation
(Note 2, 3) Internally Limited
Maximum Junction Temperature 150 C
Storage Temperature Range -65 C < TA < +150 C
Lead Temperature 300 C(Soldering, 10 seconds)
Thermal Resistance
ThetaJA 73 C/W CERDIP (Still Air) 37 C/W CERDIP (500LF/Min Air Flow) 122 C/W CERAMIC SOIC (Still Air) 77 C/W CERAMIC SOIC (500LF/Min Air Flow)
ThetaJC 3 C/W CERDIP 5 C/W CERAMIC SOIC
Package Weight
(Typcial) 1970mgCERDIP 360mgCERAMIC SOIC
ESD Susceptibility
(Note 4) 500V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Note 3: The package material for these devices allows much improved heat transfer over our
standard ceramic packages. In order to take full advantage of this improved heat
transfer, heat sinking must be provided between the package base (directly beneath
the die), and either metal traces on, or thermal vias through, the printed circuit
board. Without this additional heat sinking, device power dissipation must be
calculated using junction-to-ambient, rather than junction-to-case, thermal
resistance. It must not be assumed that the device leads will provide substantial
heat transfer out of the package, since the thermal resistance of the leadframe
material is very poor, relative to the material of the package base. The stated
junction-to-case thermal resistance is for the package material only, and does not
account for the additional thermal resistance between the package base and the
printed circuit board. The user must determine the value of the additional thermal
resistance and must combine this with the stated value for the package, to calculate
the total allowed power dissipation for the device.
Note 4: Human body model, 100pF discharged through 1.5K Ohms.
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MICROCIRCUIT DATA SHEET
MNLM2941-X REV 4A1
Recommended Operating Conditions
(Note 1)
Input Voltage 26V
Operating Temperature Range -55 C < TA < +125 C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
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MNLM2941-X REV 4A1 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS:
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: 5V < Vo < = 20V, Vin = Vo +5V, Cout = 22uF
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Vref Reference Voltage 5mA < Io < 1A 1.237 1.313 V 1
1.211 1.339 V 2, 3
Vrline Line Regulation Vo + 2V < Vin < 26V, Io = 5mA 3 10 mV/V 1, 2,
3
Vrload Load Regulation 50mA < Io < 1A 3 10 mV/V 1, 2,
3
Iq Quiescent Current Vo + 2V < Vin < 26V, Io = 5mA 15 mA 1
20 mA 2, 3
Vin = Vo + 5V, Io = 1A 45 mA 1
60 mA 2, 3
Vdo Dropout Voltage Io = 1A 0.8 V 1
1.00 V 2, 3
Io = 100mA 200 mV 1
300 mV 2, 3
Isc Short Circuit
Current Vin max = 26V 1.6 3.5 A 1
1.3 3.7 A 2, 3
Maximum
Operational Input
Voltage
2 26 Vdc 1, 2,
3
Reverse Polarity
DC Input Voltage Ro = 100 Ohms, Vo > -0.6V 1 -15 V 1, 2,
3
V(TO) ON/OFF Threshold
Voltage ON Io < 1A 1 0.8 V 1, 2,
3
V(TO) ON/OFF Threshold
Voltage OFF Io < 1A 1 2.00 V 1, 2,
3
ON/OFF Threshold
Current V ON/OFF = 2.0V, Io < 1A 100 uA 1
300 uA 2, 3
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MNLM2941-X REV 4A1 MICROCIRCUIT DATA SHEET
Electrical Characteristics
AC PARAMETERS:
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: 5V < Vo < = 20V, Vin = Vo +5V, Cout = 22uF
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Maximum Line
Transient Vo max 1V above nominal Vo,
Ro = 100 Ohms, T < 100mS 60 V 4, 5,
6
Reverse Polarity
Transient Input
Voltage
T < 100mS, Ro = 100 Ohms -50 V 4, 5,
6
RR Ripple Rejection fo = 1KHz, 1 Vrms, IL = 100mA 4 0.02 %/V 4
4 0.04 %/V 5, 6
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: 5V < Vo < = 20V, Vin = Vo +5V, Cout = 22uF. "Delta Calculations performed on JAN S and QMLV devices at
Group B, Subgroup 5 ONLY"
Vref Reference Voltage 5mA < Io < 1A -25 +25 mV 1
Note 1: Functional test go no go only.
Note 2: Condition for Vin.
Note 3: Limit = mV per Volt of Vout.
Note 4: %/V = % of Vin per Volt of Vout.
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MICROCIRCUIT DATA SHEET
MNLM2941-X REV 4A1
Graphics and Diagrams
GRAPHICS# DESCRIPTION
06333HRA2 CERDIP (J), 16 LEAD (B/I CKT)
06352HRA1 CERPACK (W), 16 LEAD (B/I CKT)
J16ARL CERDIP (J), 16 LEAD (P/P DWG)
P000158A CERDIP (J), 16 LEAD (PINOUT)
P000378A CERAMIC SOIC, 16 LEAD (PINOUT)
WG16ARC CERAMIC SOIC (WG), 16 LEAD (P/P DWG)
See attached graphics following this page.
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N
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
1 16
2 15
3 14
4 13
5 12
6 11
7 10
8 9
NC
NC
NC
NC
NC
NC
NC
OUTPUT
ADJ
GND
GND
GND
N/C
N/C
ON/OFF
VIN
LM2941WG
16 - LEAD CERAMIC SOIC
CONNECTION DIAGRAM
TOP VIEW
P000378A
MICROCIRCUIT DATA SHEET
MNLM2941-X REV 4A1
Revision History
Rev ECN # Rel Date Originator Changes
0A0 M0001075 02/11/99 Barbara Lopez Initial Release of: MNLM2941-X Rev. 0A0. Added note
for power dissipation and reference to thermal
resistance for Aluminum Nitride package.
1A1 M0003224 10/08/99 Rose Malone Update MDS: MNLM2941-X, Rev. 0A0 to MNLM2941-X, Rev.
1A1.
2A1 M0003559 11/28/00 Rose Malone Update MDS: MNLM2941-X, Rev. 1A1 to MNLM2941-X, Rev.
2A1. Changed Vdo, Io = 100mA, Max. condition subgroups
to Subgroup 1 at 200mV and Subgroup 2 and 3 at 300mV.
2B1 M0003777 01/31/01 Rose Malone Update MDS: MNLM2941-X, Rev. 2A1 to MNLM2941-X, Rev.
2B1. Added MLS part number reference to Main Table.
3A1 M0003783 05/04/01 Rose Malone Update MDS: MNLM2941-X, Rev. 2B1 to MNLM2941-X, Rev.
3A1. Changed Electrical Section DC parameter Isc Max
limit Subgroup 1 from 3.3A to 3.5A and Subgroups 2, 3
from 3.5A to 3.7A
4A1 M0003801 05/04/01 Rose Malone Update MDS: MNLM2941-X, Rev. 3A1 to MNLM2941-X, Rev.
4A1. Removed on Main Table, Feature Section and
Graphics Section reference to K pkg. Added Main Table,
Feature Section reference to WG pkg and Drift Value
Parameter to Electrical Section.
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