OPTOELECTRONICS GaAs INFRARED EMITTING DIODE 1N6264 SEATING PLANE he A e L ihe GG Si | Dp | | ed D4 $T1332 SYMBOL INCHES MILLIMETERS | notes MIN. | MAX. | MIN. | MAX. A 255 6.47 b 016 | 021 | .407 | 533 @D 209 | .230 | 5.31 | 5.84 @D, 180 | 188 | 4.57 | 4.77 e 100 NOM. 2.54 NOM. 2 & 050 NOM. 1.27 NOM. 2 h .030 76 i 031 | .044 79 | 1.11 k 036 | .046 92 | 1.16 1 L 1.00 25.4 uw 45 45 45 45 3 3 ( , I ANODE CATHODE (CONNECTED TO CASE) ST1604 NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAX. DIAMETER .021 (.533mm) MEASURED IN GAUGING PLANE .054" + .001 .000 (1437 + 025 000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007 (.778mm) THEIR TRUE POSITION RELATIVE TO A MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB. The 1N6264 is a 940nm LED in a narrow angle, T0-46 package. Good optical to mechanical alignment Mechanically and wavelength matched to TO-18 series phototransistor Hermetically sealed package High irradiance level (*) indicates JEDEC registered values OPTDELECTRONICS GaAs INFRARED EMITTING DIODE *Storage Temperature ... 00. ee tne eee 65C to +150C Operating Temperature 66.0 tenes 65C to +125C *Soldering: *Lead Temperature (Iron) 0.266 een teen eters 240C for 5 sec." *Lead Temperature (FIOW) 2.0.0.0 ete 260C for 10 sec.**) *Continuous Forward Current... 20.0.0... ene nnn e eens 100 mA *Forward Current (ow, 1448; 200 HZ)... 2. ee eee tee ee 10A *Reverse Voltage 2.6. nn een nt n ete n nnn ener es 3 Volts *Power Dissipation (Ta = 25C)... nn ene een e eet t ene nets 170 mw Power Dissipation (Tc = 25C) 20... ene eet etn 1.3 We PARAMETER SYMBOL \. . - TEST CONDITIONS *Forward Voltage . Vv {- = 100 mA *Reverse Leakage Current pA Vat 3V *Peak Emission Wavelength nm |. = 100 mA Emission Angle at 2 Power + Degrees *Total Power mw |; = 100 mA Rise Time 0-90% of output . BS Fall Time 100-10% of output : wes Derate power dissipation linearly 1.70 mW/C above 25C ambient. , Derate power dissipation linearly 13.0 MW/C above 25C case. AMA flux is recommended. . Methanol or lsopranol alcohols are recommended as cleaning agents. . Soldering iron tip 46 (1.6 mm) minimum from housing. As long as leads are not under any stress or spring tension. . Total power output, Po, is the total power radiated by the device into a solid angle of 27 steradians. NOORONW OPTOELECTRONICS GaAs INFRARED EMITTING DIODE g z 34 CONTINUOUS IRWARD 7 1 uit WORMALIZED POWER OUTPUT T rr Ay NORMALIZED POWER OUTPUT az Cou y ee ot LA Tar 26C oa NORMALIZED TO as z TeH00mA LOS | Tae 2orc a2 0.02 ee a cs ts 6 60 78 Tao) 128 180 Te~ FORWARD CURRENT -AMPERES: Ta-AMBIENT TEMPERATURE -*C Fig. 1. Power Output vs. input Current ST1002 Fig. 2. Power Output vs. Temperature ST1007 ao too 9 60 so a a 0 = L LZ 4 L ee A. 2 " 40 a FA F LT a 4 i . L L. i 7 ain 4 for Reece 55C os 5 . i L 2 oz . 7 F 7 < t 7 E / 7 7 2 a } i 7 7 \ 08 + e* " f 7 I [ . + 7 / OG i z 3 a cy 10 ' r L K-} Al ea 4 5 VE~ FORWARD VOLTAGE - VOLTS Ve - FORWARD VOLTAGE - VOLTS Fig. 3. Forward Voltage vs. Forward Current $11003 Fig. 4. Forward Voliage vs. Forward Current ST1006 wo 40) RELATIVE CUTPUT - PERCENT 40 20 LJ 10 20 o 9 O-ANGULAR DISPLACEMENT FROM OPTICAL AXIS - DEGREES Fig. 5. 1N6264 Typical Radiation Pattern ST1004