Characteristics STPS20SM120S
2/14 DocID022921 Rev 2
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.56 x IF(AV) + 0.008 x IF2(RMS)
Table 2. Absolute ratings (limiting values wit h terminals 1 and 3 short circuited at Tamb = 25 °C,
unless other wise specifie d)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 120 V
IF(RMS) For ward rms current 50 A
IF(AV) Average for ward current 20 A
IFSM Surge non repetitive forward current tp = 10 ms sine-wave 220 A
PARM(1) Repetit ive peak avalanche pow er Tj = 125 °C, tp = 10 µs 900 W
VARM(2) Maximum repetitive peak avalanche voltage tp < 1 0 µs, T j < 125 °C, IAR < 6A 150 V
VASM(2) Maximum single-pulse peak avalanche voltage tp < 1 0 µs , T j < 125 °C, IAR < 6A 150 V
Tstg Storage tem perature range -65 to +175 °C
TjMaximum operating junction temperature (3) 150 °C
1. For pulse time duration deratings, please refer to Figure 4. More details re garding the avalanche energy meas urements
and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible
avalanche power of Schottky di odes” and AN2025, “Converter improvement usin g Schottky rectifier avalanche
specification”.
2. See Figure 9
3. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resist ance
Symbol Parameter Value Unit
Rth(j-c) Junction to case TO -220AB and TO-220AB narr ow leads 1.55 °C/W
TO-220FPAB 4
Tabl e 4. Static electrical character istics (termin als 1 and 3 short circuited)
Symbol Parameter Test conditions Min. Typ. Max. Unit
IR(1) Reverse leakage current Tj = 25 °C VR = VRRM - 40 210 µA
Tj = 125 °C - 15 40 mA
VF(2) Forward vol tage drop
Tj = 125 °C IF = 5 A - 0.49 0.54
V
Tj = 25 °C IF = 10 A -0.75
Tj = 125 °C - 0.57 0.62
Tj = 25 °C IF = 20 A - 0.89
Tj = 125 °C - 0.65 0.72
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs , δ < 2%