1N4447 HIGH SPEED SWITCHING DIODE
FEATURES :
• High switching speed: max. 4 ns
• Reverse voltage:max. 75V
• Peak reverse voltage:max. 100 V
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratin
g
s and Thermal Characteristics ( Ta = 25 °C)
Symbol Value Unit
VRM 100 V
VR75 V
Maximum Forward DC Current IF200 mA
Maximum Average Forward Current IF(AV) mA
Maximum Surge Forward Current at tp = 1 µs IFSM 2A
Power Dissipation PD500 mW
Maximum Junction Temperature TJ200 °C
Storage Temperature Range TSTG -65 to + 200 °C
Electrical Characteristics ( Ta = 25 °C)
Parameter Symbol Min. Typ. Max. Unit
VR = 20 V - - 25 nA
VR = 20 V , Tj = 150 °C- -50
μA
Forward Voltage VFIF = 20 mA --1V
Reverse Breakdown Voltage V(BR)R IR = 100 μA (pulsed) 100 - - V
Diode Capacitance Cd - - 2 pF
IF = 10 mA ,VR = 6 V,
RL = 100 Ω
Page 1 of 2 Rev. 01 : May 9, 2006
ns4
f = 1MHz ; VR = 0
--
Reverse Current
Test Condition
Reverse Recovery
T
Trr
IR
150
Parameter
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
0.150 (3.8)
max.
0.020 (0.52)max.
Dimensions in inches and
(
millimeters
)
1.00 (25.4)
min.
1.00 (25.4)
min.
Cathode
Mark
Certificate TH97/10561QM Certificate TW00/17276EM
RATING AND CHARACTERISTIC CURVES ( 1N4447 )
FIG1. - FORWARD CURRENT VS. FIG.2 - REVERSE CURRENT VS.
FORWARD VOLTAGE JUNCTION TEMPERATURE
FIG3. - CAPACITANCE BETWEEN FIG. 4 - REVERSE RECOVERY TIME VS.
TERMINALS VS. REVERSE VOLTAGE FORWARD CURRENT
Page 2 of 2 Rev. 01 : May 9, 2006
FORWARD CURRENT , IF (mA)
FORWARD VOLTAGE , VF (V)
0
0.1 0.2 0.4 0.6 0.8 1.2
1.0
10
100
1000
10
100
1000
10000
1.00 20 40 60 80 100
REVERSE CURRENT, IR (nA)
REVERSE VOLTAGE , VR (V)
0102030
DIODE CAPACITANCE, Cd (pF)
2.5
2.0
1.5
1.0
0.5
0
TJ = 125
TJ = 25 °C
f = 1 MHz
Ta = 25 °C
1.0
REVERSE RECOVERY TIME, Trr (ns)
10
8
6
4
2
00 5 10 15 20 25
REVERSE VOLTAGE , VR (V)
REVERSE VOLTAGE , VR (V)
TJ = 25 °C
TJ = 100 °C
Ta = 25 °C
Certificate TH97/10561QM Certificate TW00/17276EM
