TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2221AL 2N2221AUA 2N2221AUB 2N2221AUBC 2N2222A 2N2222AL 2N2222AUA 2N2222AUB 2N2222AUBC JANSM - 3K Rads (Si) JANSD - 10K Rads (Si) JANSP - 30K Rads (Si) JANSL - 50K Rads (Si) JANSR - 100K Rads (Si) JANSF - 300K Rads (Si) JANSG - 500K Rads (Si) JANSH - 1MEG Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 800 mAdc Collector Current TO-18 (TO-206AA) Total Power Dissipation @ TA = +25C 2N2221A, L 2N2221AUA 2N2221AUB, UBC 2N2222A, L 2N2222AUA 2N2222AUB, UBC Operating & Storage Junction Temperature Range PT 0.5 0.65 0.50 W Top, Tstg -65 to +200 C Symbol Max. Unit 2N2221A, 2N2222A THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Ambient 2N2221A, L 2N2221AUA 2N2221AUB, UBC 1. 2. 2N2222A, L 2N2222AUA 2N2222AUB, UBC 4 PIN 2N2221AUA, 2N2222AUA RJA 325 210 325 C/W Derate linearly 3.08 mW/C above TA > +37.5C Derate linearly 4.76 mW/C above TA > +63.5C 3 PIN 2N2221AUB, 2N2222AUB 2N2221AUBC, 2N2222AUBC (UBC = Ceramic Lid Version) T4-LDS-0042 Rev. 2 (080857) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 50 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 75Vdc VCB = 60Vdc Emitter-Base Cutoff Current VEB = 6.0Vdc VEB = 4.0Vdc Collector-Emitter Cutoff Current VCE = 50Vdc Vdc ICBO 10 10 Adc Adc IEBO 10 10 Adc Adc ICES 50 Adc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc 2N2221A, L, UA, UB, UBC 2N2222A, L, UA, UB, UBC 30 50 IC = 1.0mAdc, VCE = 10Vdc 2N2221A, L, UA, UB, UBC 2N2222A, L, UA, UB, UBC 35 75 IC = 10mAdc, VCE = 10Vdc 2N2221A, L, UA, UB, UBC 2N2222A, L, UA, UB, UBC IC = 150mAdc, VCE = 10Vdc 2N2221A, L, UA, UB, UBC 2N2222A, L, UA, UB, UBC 40 100 IC = 500mAdc, VCE = 10Vdc 2N2221A, L, UA, UB, UBC 2N2222A, L, UA, UB, UBC 20 30 hFE Collector-Emitter Saturation Voltage IC = 150mAdc, IB = 15mAdc IC = 500mAdc, IB = 50mAdc VCE(sat) Base-Emitter Voltage IC = 150mAdc, IB = 15mAdc IC = 500mAdc, IB = 50mAdc VBE(sat) T4-LDS-0042 Rev. 2 (080857) 150 325 40 100 0.6 120 300 0.3 1.0 Vdc 1.2 2.0 Vdc Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N2221A, L, UA, UB, UBC 2N2222A, L, UA, UB, UBC Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 20mAdc, VCE = 20Vdc, f = 100MHz Symbol Min. Max. Unit hfe 30 50 |hfe| 2.5 Cobo 8.0 pF Cibo 25 pF Max. Unit Output Capacitance VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz f 1.0MHz SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Turn-On Time See figure 8 of MIL-PRF-19500/255 ton 35 s Turn-Off Time See Figure 9 of MIL-PRF-19500/255 toff 300 s (3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0042 Rev. 2 (080857) Page 3 of 3