www.irf.com 1
6/4/10
IRF9388PbF
HEXFET® Power MOSFET
Notes through are on page 2
PD - 97521
Features and Benefits
Applications
• Adaptor Input Switch for Notebook PC
Features Resulting Benefits
SO-8


*
6
6
6
'
'
'
'
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C Power Dissipation
f
P
D
@T
A
= 70°C Power Dissipation
f
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
A
W
°C
Max.
-12
-9.6
-96
± 25
-30
-55 to + 150
2.5
0.02
1.6
Note
Form Quantity
IRF9388PbF SO8 Tube/Bulk 95
IRF9388TRPbF SO8 Ta
p
e and Reel 4000
Orderable part number Package Type Standard Pack
25V VGS max Direct Drive at High VGS
Industry-Standard SO8 Package Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
V
DS
-30 V
V
GS max
±25 V
R
DS(on) max
(@V
GS
= -10V)
11.9 mΩ
I
D
(@T
A
= 25°C)
-12 A
IRF9388PbF
2www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 2.6mH, RG = 25Ω, IAS = -9.6A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
G
D
S
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C
R
DS(on)
––– 8.5 –––
––– 10 11.9
V
GS(th)
Gate Threshold Voltage -1.3 -1.8 -2.4 V
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– -1.0
––– ––– -150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 10
Gate-to-Source Reverse Leakage ––– ––– 10
gfs Forward Transconductance 20 ––– ––– S
Q
g
Total Gate Charge
h
––– 18 ––– nC V
DS
= -15V, V
GS
= -4.5V, I
D
= - 9.6A
Q
g
Total Gate Charge
h
––– 35 52
Q
gs
Gate-to-Source Charge
h
––– 5.3 –––
Q
gd
Gate-to-Drain Charge
h
––– 8.5 –––
R
G
Gate Resistance
h
––– 15 ––– Ω
t
d(on)
Turn-On Delay Time ––– 19 –––
t
r
Rise Time ––– 57 –––
t
d(off)
Turn-Off Delay Time ––– 80 –––
t
f
Fall Time ––– 66 –––
C
iss
Input Capacitance ––– 1680 –––
C
oss
Output Capacitance ––– 350 –––
C
rss
Reverse Transfer Capacitance ––– 220 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 51 76 ns
Q
rr
Reverse Recovery Charge ––– 35 53 nC
Thermal Resistance
Parameter Units
R
θJL
Junction-to-Drain Lead
g
R
θJA
Junction-to-Ambient
f
Conditions
See Figs. 20a &20b
Max.
120
-9.6
ƒ = 1.0MHz
V
GS
= 0V
V
DS
= -25V
V
DS
= -24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -20V, I
D
= -12A
e
V
DS
= V
GS
, I
D
= -25μA
V
GS
= -10V, I
D
= -12A
e
mΩ
μA
T
J
= 25°C, I
F
= -2.5A, V
DD
= -24V
di/dt = 100A/μs
e
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
I
D
= -9.6A
R
G
= 6.8Ω
V
DS
= -10V, I
D
= -9.6A
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
DD
= -15V, V
GS
= -4.5V
e
I
D
= -1.0A
V
DS
= -15V
V
GS
= -25V
V
GS
= 25V
V
GS
= -10V
ns
pF
–––
Typ.
–––
Static Drain-to-Source On-Resistance
A
––– –––
––– –––
-2.5
-96
μA
nC
°C/W
Max.
20
50
Typ.
–––
–––
IRF9388PbF
www.irf.com 3
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 110 100
-V DS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-ID, Drain-to-Source Current (A)
VGS
TOP -10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
BOTTOM -2.5V
≤60μs PULSE WIDTH
Tj = 25°C
-2.5V
0.1 110 100
-V DS, Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
VGS
TOP -10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
BOTTOM -2.5V
≤60μs PULSE WIDTH
Tj = 150°C
-2.5V
1.0 2.0 3.0 4.0 5.0 6.0
-VGS, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
-ID, Drain-to-Source Current (A)
VDS = -10V
≤ 60μs PULSE WIDTH
TJ = 25°C
TJ = 150°C
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -12A
VGS = -10V
110 100
-V DS, Drain-to-Source Voltage (V)
100
1000
10000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 8 16 24 32 40 48
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
14
-VGS, Gate-to-Source Voltage (V)
VDS= -24V
VDS= -15V
VDS= -6.0V
ID= -9.6A
IRF9388PbF
4www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Threshold Voltage vs. Temperature
0.2 0.4 0.6 0.8 1.0
-VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
-ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
25 50 75 100 125 150
TA , Ambient Temperature (°C)
0
2
4
6
8
10
12
-ID, Drain Current (A)
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
-VGS(th), Gate threshold Voltage (V)
ID = -25μA
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
Thermal Response ( Z thJA ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
TA = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
DC
IRF9388PbF
www.irf.com 5
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current
Fig 16. Typical Power vs. Time
* Reverse Polarity of D.U.T for P-Channel
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• di/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
RGVDD
D.U.T *
Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
0 5 10 15 20
-V GS, Gate -to -Source Voltage (V)
0
10
20
30
40
50
RDS(on), Drain-to -Source On Resistance (mΩ)
TJ = 125°C
TJ = 25°C
ID = -12A
010 20 30 40 50 60
-ID, Drain Current (A)
0
10
20
30
40
50
60
RDS(on), Drain-to -Source On Resistance (mΩ)
VGS = -10V
VGS = -4.5V
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
E
AS , Single Pulse Avalanche Energy (mJ)
ID
TOP -2.3A
-3.3A
BOTTOM -9.6A
1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Time (sec)
0
200
400
600
800
1000
Single Pulse Power (W)
IRF9388PbF
6www.irf.com
Fig 18a. Gate Charge Test Circuit Fig 18b. Gate Charge Waveform
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
Fig 20b. Switching Time Waveforms
Fig 20a. Switching Time Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
1K
VCC
DUT
0
L
S
20K
S
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
-VGS
VDS
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
tp
V
(
BR
)
DSS
I
AS
V
DS
90%
10%
V
GS
td(on) trtd(off) tf
IRF9388PbF
www.irf.com 7
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
SO-8 Package Outline(Mosfet & Fetky)
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Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
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IRF9388PbF
8www.irf.com
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
 Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
 Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.6/2010
Data and specifications subject to change without notice.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
MSL1
(per JEDEC J-STD-020D
†††
)
RoHS Compliant
Qualification Information
†
Qualification level Consumer
††
(per JEDEC JESD47F
†††
guidelines)
Yes
Moisture Sensitivity Level SO-8