SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A
2006-10-30
1
TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A
AC POWER CONTROL APPLICATIONS
z Repetitive Peak OffState Voltage: VDRM = 400V, 600V
z R.M.S OnState Current: IT (RMS) = 16A
z High Commutating (dv / dt)
z Isolation Voltage: VISOL = 1500V AC
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC SYMBOL RATING UNIT
SM16GZ47
SM16GZ47A 400
Repetitive Peak
OffState Voltage SM16JZ47
SM16JZ47A
VDRM
600
V
R.M.S OnState Current
(Full Sine Waveform Tc = 73°C) IT (RMS) 16 A
150 (50Hz)
Peak One Cycle Surge OnState
Current (NonRepetitive) ITSM
165 (60Hz)
A
I2t Limit Value I2t 112.5 A2s
Critical Rate of Rise of OnState
Current (Note 1)
di / dt 50 A / μs
Peak Gate Power Dissipation PGM 5 W
Average Gate Power Dissipation PG (AV) 0.5 W
Peak Gate Voltage VGM 10 V
Peak Gate Current IGM 2 A
Junction Temperature Tj 40~125 °C
Storage Temperature Range Tstg 40~125 °C
Isolation Voltage (AC, t = 1 min.) VISOL 1500 V
Note 1: di / dt Test condition
VDRM = 0.5 × Rated
ITM 25A
tgw 10μs
tgr 250ns
iGP = IGT × 2.0
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA 13-10H1A
Weight: 1.7 g (typ.)
SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A
2006-10-30
2
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT
Repetitive Peak OffState Current IDRM V
DRM = Rated 20 μA
I T2 (+) , Gate (+) 1.5
II T2 (+) , Gate () 1.5
III T2 () , Gate () 1.5
Gate Trigger Voltage
IV
VGT VD = 12V,
RL = 20
T2 () , Gate (+)
V
I T2 (+) , Gate (+) 30
II T2 (+) , Gate () 30
III T2 () , Gate () 30
SM16GZ47
SM16JZ47
IV T2 () , Gate (+)
I T2 (+) , Gate (+) 20
II T2 (+) , Gate () 20
III T2 () , Gate () 20
Gate Trigger
Current
SM16GZ47A
SM16JZ47A
IV
IGT VD = 12V,
RL = 20
T2 () , Gate (+)
mA
Peak OnState Voltage VTM I
TM = 25A 1.5 V
Gate NonTrigger Voltage VGD V
D = Rated, Tc = 125°C 0.2 V
Holding Current IH V
D = 12V, ITM = 1A 50 mA
Thermal Resistance Rth (jc) Junction to Case, AC 2.5 °C / W
SM16GZ47
SM16JZ47 300
Critical Rate of Rise of
OffState Voltage SM16GZ47A
SM16JZ47A
dv / dt VDRM = Rated, Tj = 125°C
Exponential Rise
200
V / μs
SM16GZ47
SM16JZ47 10
Critical Rate of Rise of
OffState Voltage at
Commutation SM16GZ47A
SM16JZ47A
(dv / dt) c VDRM = 400V, Tj = 125°C
(di / dt) c = 8.7A / ms
4
V / μs
MARKING
Part No.
(or abbreviation code) Part No.
M16GZ47 SM16GZ47, SM16GZ47A
*1
M16JZ47 SM16JZ47, SM16JZ47A
Nothing SM16GZ47, SM16JZ47
*2
A SM16GZ47A, SM16JZ47A
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
M16GZ47
Characteristics
indicator*2
Part No. (or abbreviation code) *1
SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A
2006-10-30
3
SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A
2006-10-30
4
SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A
2006-10-30
5
RESTRICTIONS ON PRODUCT USE 20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.