Rev. A/AH
2008
-
06
-
13
TIP125/126
/
127
TAITRON COMPONEN
T
S INCORPORATED www.taitroncomponents.com
Page 1
of 4
Tel: (800)
-
TAITRON (800)
-
824
-
8766 (661)
-
257
-
6060
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
Darlin
g
ton Power Transistors
(
PNP
)
Darlington Power Transistors (PNP)
Features
• Designed for general-purpose amplifier and low speed
switching applications
• RoHS Compliant
Mechanical Data
Case: TO-220, Plastic Package
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.08 ounces, 2.24 grams
Maximum Ratings (T
Ambient
=25ºC unless noted otherwise)
Symbol Description TIP125 TIP126 TIP127 Unit
VCBO Collector-Base Voltage 60 80 100 V
VCEO Collector-Emitter Voltage 60 80 100 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current Continuous 5.0 A
ICM Collector Current Peak 8.0 A
IB Base Current 120 mA
Power Dissipation upto TC=25°C 65 W
Power Dissipation Derate above TC=25°C 0.52 W/° C
Power Dissipation upto TA=25°C 2.0 W
PD
Power Dissipation Derate above TA=25°C 16 mW/° C
RθJA Thermal Resistance from Junction to Ambient in Free Air 62.5 ° C /W
RθJC Thermal Resistance from Junction to Case 1.92 ° C /W
TJ, TSTG Operating Junction and Storage Temperature Range -65 to +150 ° C
TO-220
Rev. A/AH
2008
-
06
-
13
TIP125/126
/
127
Darlington Power Transistors (PNP)
www.taitroncomponents.com Page 2
of 4
Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
Symbol Description Min. Max. Unit Conditions
1000 - VCE=3V, IC=0.5A
*hFE D.C. Current Gain
1000 -
VCE=3V, IC=3A
TIP125 60 - V
TIP126 80 - V
*VCEO(sus) Collector-Emitter Sustaining
Voltage
TIP127 100 - V
IC=100mA, IB=0
- 2.0 V
IC=3A, IB=12mA
*VCE(sat) Collector-Emitter Saturation Voltage
- 4.0 V
IC=5A, IB=20mA
*VBE(on) Base-Emitter On Voltage - 2.5 V IC=3A, VCE=3V
TIP125 - 0.5 VCE=30V, IB=0
TIP126 - 0.5 VCE=40V, IB=0 ICEO Collector-Emitter Cut-off
Current
TIP127 - 0.5
mA
VCE=50V, IB=0
TIP125 - 0.2 VCB=60V, IE=0
TIP126 - 0.2 VCB=80V, IE=0 ICBO Collector-Base Cut-off
Current
TIP127 - 0.2
mA
VCB=100V, IE=0
IEBO Emitter-Base Cut-off Current - 2 mA VEB=5V, IC=0
hfe Small Signal Current Gain 4.0 - IC=3A, VCE=4V,
f=1.0MHz,
Cob Output Capacitance - 300 pF VCB=10V, IE=0,
f=0.1MHz,
ton Turn on time Typ. 0.4
toff Turn off time Typ. 1.2
µS
IC=3A, RL=10Ω,
IB1=IB2=12mA,
VEB(off)=5V
*Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Rev. A/AH
2008
-
06
-
13
TIP125/126
/
127
Darlington Power Transistors (PNP)
www.taitroncomponents.com Page 3
of 4
Dimensions in inch (mm)
TO-220
Rev. A/AH
2008
-
06
-
13
TIP125/126
/
127
Darlington Power Transistors (PNP)
www.taitroncomponents.com Page 4
of 4
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
