August 2009 Doc ID 16095 Rev 1 1/8
8
MJD44H11T4-A
MJD45H11T4-A
Complementary power transistors
Features
The devices are qualified for automotive
application
Low collector-emitter saturation voltage
Fast switching speed
Surface-mounting TO-252 (DPAK) power
package in tape and reel (suffix "T4")
Applications
Power amplifier
Switching circuits
Description
The devices are manufactured in low voltage multi
epitaxial planar technology. They are intended for
general purpose linear and switching applications.
.
Figure 1. Internal schematic diagram
DPAK
TO-252
1
3
2
TA B
Table 1. Device summary
Order codes Marking Polarity Package Packaging
MJD44H11T4-A MJD44H11 NPN DPAK Tape and reel
MJD45H11T4-A MJD45H11 PNP DPAK Tape and reel
www.st.com
Absolute maximum ratings MJD44H11T4-A, MJD45H11T4-A
2/8 Doc ID 16095 Rev 1
1 Absolute maximum ratings
Note: For PNP types voltage and current values are negative.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCEO Collector-emitter voltage (IB = 0) 80 V
VEBO Emitter-base voltage (IC = 0) 5 V
ICCollector current 8 A
ICM Collector peak current 16 A
PTOT Total dissipation at Tcase = 25 °C 20 W
TSTG Storage temperature -55 to 150 °C
TJMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case max 6.25 °C/W
MJD44H11T4-A, MJD45H11T4-A Electrical characteristics
Doc ID 16095 Rev 1 3/8
2 Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Note: For PNP types voltage and current values are negative.
2.1 Typical characteristic (curves)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
VCEO(sus)(1)
1. Pulse test: pulse duration 300 µs, duty cycle 2 %.
Collector-emitter
sustaining voltage (IB = 0) IC = 30 mA 80 - V
ICES
Collector cut-off current
(VBE = 0) VCE = 80 V - 10 µA
IEBO
Emitter cut-off current
(IC = 0) VEB = 5 V - 50 µA
VCE(sat)(1) Collector-emitter saturation
voltage IC = 8 A IB = 0.4 A - 1 V
VBE(sat)(1) Base-emitter saturation
voltage IC = 8 A IB = 0.8 A - 1.5 V
hFE(1) DC current gain IC = 2 A_ VCE = 1 V 60 -
IC = 4 A_ _ VCE = 1 V 40 -
Figure 2. Safe operating area Figure 3. Derating curves
Electrical characteristics MJD44H11T4-A, MJD45H11T4-A
4/8 Doc ID 16095 Rev 1
Figure 4. DC current gain (NPN) Figure 5. DC current gain (PNP)
Figure 6. Collector-emitter saturation
voltage (NPN)
Figure 7. Collector-emitter saturation
voltage (PNP)
MJD44H11T4-A, MJD45H11T4-A Package mechanical data
Doc ID 16095 Rev 1 5/8
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Package mechanical data MJD44H11T4-A, MJD45H11T4-A
6/8 Doc ID 16095 Rev 1
DIM. mm.
.xampyt.nim
04.202.2A
01.109.01A
32.030.02A
09.046.0b
04.502.54b
06.054.0c
06.084.02c
02.600.6D
01.51D
06.604
.6E
07.41E
82.2e
06.404.41e
01.0153.9H
1L
08.21L
08.02L
106.04L
02.0R
V2 0 o8 o
TO-252 (DPAK) mechanical data
0068772_G
MJD44H11T4-A, MJD45H11T4-A Revision history
Doc ID 16095 Rev 1 7/8
4 Revision history
Table 5. Document revision history
Date Revision Changes
06-Aug-2009 1 Initial release.
MJD44H11T4-A, MJD45H11T4-A
8/8 Doc ID 16095 Rev 1
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