140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 SD1511-08 RF & MICROWAVE TRANSISTORS UHF RADAR APPLICATION Features * * * * * * 425 MHz 28 VOLTS POUT = 10 WATT GP = 9.2 dB MINIMUM GOLD METALIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The SD1511-08 is a gold metalized, silicon NPN power transistor designed for CW and pulsed radar applications in the 400 - 450 MHz frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol VCBO VCEO VEBO PDISS IC TJ T STG Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter-Base Voltage Power Dissipation Device Current Junction Temperature Storage Temperature Value Unit 65 65 4.0 58.3 2.0 +200 -65 to +150 V V W A C C 3.0 C/W v Thermal Data RTH(J-C) Thermal Resistance Junction-case SD1511-08 ELECTRICAL SPECIFICATIONS (Tcase = 25 25 C) STATIC Symbol BVCBO BVEBO ICBO HFE Test Conditions IC = 10mA IE = 1mA VCB = 30V VCE = 5V IE = 0mA IC = 0mA IE = 0mA IC = 1mA Min. Value Typ. Max. Unit 65 4.0 --10 --------- ----1 100 V V mA --- Min. Value Typ. Max. Unit DYNAMIC Symbol Test Conditions POUT f = 425 MHz PIN = 1.2W VCE = 28V 10 --- --- W GP C f = 425 MHz PIN = 1.2W VCE = 28V 9.2 --- --- dB f = 425MHz PIN = 1.2W VCE = 28V 50 --- --- % IMPEDANCE DATA: FREQUENCY Zin Zcl 400 MHz 1.4 + j1.0 16 - j4.0 425 MHz 1.4 + j1.2 17 - j4.0 450 MHz 1.5 + j1.1 19 - j4.0 PIN = 1.2W VCC = 28V SD1511-08 TYPICAL PERFORMANCE SD1511-08 PACKAGE MECHANICAL DATA