SD1511-08
DESCRIPTION: DESCRIPTION:
The SD1511-08 is a gold metalized, silicon NPN power
transistor designed for CW and pulsed radar applications in the
400 – 450 MHz frequency range.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO Collector - Base Voltage 65 V
VCEO Collector - Emitter Voltage 65 V
VEBO Emitter-Base Voltage 4.0
v
PDISS Power Dissipation 58.3 W
ICDevice Current 2.0 A
TJJunction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal DataThermal Data
RTH(J-C) Thermal Resistance Junction-case 3.0 °°C/W
FeaturesFeatures
• 425 MHz
• 28 VOLTS
• POUT = 10 WATT
• GP = 9.2 dB MINIMUM
• GOLD METALIZATION
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
UHF RADAR APPLICATION
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
SD1511-08
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO IC = 10mA IE = 0mA 65 --- --- V
BVEBO IE = 1mA IC = 0mA 4.0 --- --- V
ICBO VCB = 30V IE = 0mA --- --- 1mA
HFE VCE = 5V IC = 1mA 10 --- 100 ---
DYNAMICDYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT f = 425 MHz PIN = 1.2W VCE = 28V 10 --- --- W
GPf = 425 MHz PIN = 1.2W VCE = 28V 9.2 --- --- dB
ηηCf = 425MHz PIN = 1.2W VCE = 28V 50 --- --- %%
IMPEDANCE DATA:IMPEDANCE DATA:
FREQUENCY Zin Zcl
400 MHz 1.4 + j1.0 16 - j4.0
425 MHz 1.4 + j1.2 17 - j4.0
450 MHz 1.5 + j1.1 19 - j4.0
PIN = 1.2W
VCC = 28V
SD1511-08
TYPICAL PERFORMANCETYPICAL PERFORMANCE
SD1511-08
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
