FDG6301N-F085 Dual N-Channel Digital FET FDG6301N-F085 Dual N-Channel, Digital FET Features 25 V, 0.22 A continuous, 0.65 A peak. RDS(ON) = 4 @ VGS= 4.5 V, RDS(ON) = 5 @ VGS= 2.7 V. Very low level gate drive requirements allowing directoperation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package. Qualified to AEC Q101 RoHS Compliant Applications Low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID PD Parameter Gate to Source Voltage Ratings 25 Units V 8 V Drain Current Continuous 0.22 Pulsed 0.65 Power Dissipation TJ, TSTG Operating and Storage Temperature A 0.3 W -55 to +150 oC kV ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model(100 pF / 1500 W) 6.0 RJA Thermal Resistance, Junction to Ambient 415 o C/W Package Marking and Ordering Information Device Marking FDG6301N Device FDG6301N-F085 Package SC70-6 Reel Size 7" Tape Width 8mm Quantity 3000 units Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the o solder mounting surface of the drain pins. RJC is guaranteed by design, while RJA is determined by the board design. RJA = 415 C/W on minimum pad mounting on FR-4 board in still air 2: A suffix as "...F085P" has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in Aug 2014. 3: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. (c)2016 Semiconductor Components Industries, LLC. September-2017, Rev. 2 1 Publication Order Number: FDG6301N-F085/D Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250A, VGS = 0V 25 - - - - 1 - - 10 - - 100 nA VGS = VDS, ID = 250A 0.65 0.85 1.5 V ID = 0.22A, VGS= 4.5V - 2.6 4 ID = 0.19A, VGS= 2.7V - 3.7 5 ID = 0.22A, VGS= 4.5V TJ = 125oC - 5.3 7 VDS = 20V, VGS = 0V TJ = 55oC VGS = 8V A On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance ID(on) On-State Drain Current VGS = 4.5V, VDS = 5V 0.22 - - gFS Forward Transconductance ID = 0.22A, VDS= 5V - 0.2 - VDS = 10V, VGS = 0V, f = 1MHz - 9.5 - pF - 6 - pF S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(TOT) Total Gate Charge at -4.5V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VGS = 0 to 4.5V VDD = 5V ID = 0.22A - 1.3 - pF - 0.29 0.4 nC - 0.12 - nC - 0.03 - nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = 5V, ID = 0.5A VGS = 4.5V, RGEN = 50 - 5 10 ns - 4.5 10 ns - 4 8 ns - 3.2 7 ns - - 0.25 A - 0.8 1.2 V Drain-Source Diode Characteristics IS Maximum Continuous Source Current VSD Source to Drain Diode Voltage ISD = 0.25A, VGS = 0V www.onsemi.com 2 FDG6301N-F085 Dual N-Channel Digital FET Electrical Characteristics TA = 25C unless otherwise noted Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-toSource Voltage. Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDG6301N-F085 Dual N-Channel Digital FET Typical Characteristics Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. www.onsemi.com 4 FDG6301N-F085 Dual N-Channel Digital FET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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