FDG6301N-F085 Dual N-Channel Digital FET
©2016 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publication Order Number:
FDG6301N-F085/D
1
FDG6301N-F085
Dual N-Channel, Digital FET
Features
25 V, 0.22 A continuous, 0.65 A peak.
RDS(ON) = 4 @ VGS= 4.5 V,
RDS(ON) = 5 @ VGS= 2.7 V.
Very low level gate drive requirements allowing directop-
eration in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV
Human Body Model).
Compact industry standard SC70-6 surface
mount package.
Qualified to AEC Q101
RoHS Compliant
Applications
Low voltage applications as a replacement for bipolar
digital transistors and small signal MOSFETs
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 25 V
VGS Gate to Source Voltage 8 V
ID
Drain Current Continuous 0.22 A
Pulsed 0.65
PDPower Dissipation 0.3 W
TJ, TSTG Operating and Storage Temperature -55 to +150 oC
ESD Electrostatic Discharge Rating MIL-STD-883D
Human Body Model(100 pF / 1500 W) 6.0 kV
RJA Thermal Resistance, Junction to Ambient 415 oC/W
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined aso the
solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. RθJA = 415 C/W on
minimum pad mounting on FR-4 board in still air
2: A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially
announced
in Aug 2014.
3: Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDG6301N FDG6301N-F085 SC70-6 7” 8mm 3000 units
FDG6301N-F085 Dual N-Channel Digital FET
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Electrical Characteristics TA = 25°C unless otherwise noted
Off Characteristic s
On Characteristics
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V 25 - - V
IDSS Zero Gate Voltage Drain Current VDS = 20V, - - 1 A
VGS = 0V TJ = 55oC - - 10
IGSS Gate to Source Leakage Current VGS = ±8V - - ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250A 0.65 0.85 1.5 V
rDS(on) Drain to Source On Resistance
ID = 0.22A, VGS= 4.5V - 2.6 4
ID = 0.19A, VGS= 2.7V - 3.7 5
ID = 0.22A, VGS= 4.5V
TJ = 125oC-5.37
ID(on) On-State Drain Current VGS = 4.5V, VDS = 5V 0.22 - -
gFS Forward Transconductance ID = 0.22A, VDS= 5V - 0.2 - S
Ciss Input Capacitance VDS = 10V, VGS = 0V,
f = 1MHz
- 9.5 - pF
Coss Output Capacitance - 6 - pF
Crss Reverse Transfer Capacitance - 1.3 - pF
Qg(TOT) Total Gate Charge at -4.5V VGS = 0 to 4.5V VDD = 5V
ID = 0.22A
- 0.29 0.4 nC
Qgs Gate to Source Gate Charge -0.12- nC
Qgd Gate to Drain “Miller“ Charge - 0.03 - nC
Switching Characteristics
Drain-Source Diode Characteristics
td(on) Turn-On Delay Time
VDD = 5V, ID = 0.5A
VGS = 4.5V, RGEN = 50
- 5 10 ns
trRise Time - 4.5 10 ns
td(off) Turn-Off Delay Time - 4 8 ns
tfFall Time - 3.2 7 ns
ISMaximum Continuous Source Current - - 0.25 A
VSD Source to Drain Diode Voltage ISD = 0.25A, VGS = 0V - 0.8 1.2 V
FDG6301N-F085 Dual N-Channel Digital FET
Typical Characteristics
Figure 1. On-Region Characteris tics. Figure 2. On-Resistance Variation with Drain
Current and Gate Voltage.
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with Gate-to-
Source Voltage.
Figure 5. Transfer Characteristics. Fi gure 6. Body Diode Fo rward Vol tag e Variatio n
with Source Current and Temperature.
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FDG6301N-F085 Dual N-Channel Digital FET
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Ma ximum Power
Dissipation.
Figure 11. Transient Thermal Respon se Curve.
Typical Characteristics
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