BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features * * * * * 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available (BC807) SOT-23 Mechanical Data * * * * * * Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Marking: BC817-16 6A, K6A BC817-25 6B, K6B BC817-40 6C, K6C Aprox. Weight: 0.008 grams Mounting Position: Any Maximum Ratings Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm @25C unless otherwise specified Symbol Value Collector-Emitter Voltage Characteristic VCEO 45 Unit V Emitter-Base Voltage VEBO 5.0 V IC 800 mA Peak Collector Current ICM 1000 mA Peak Emitter Current IEM 1000 mA Power Dissipation at TSB = 50C (Note 1) Pd 310 mW Tj, TSTG -65 to +150 C Collector Current Operating and Storage Temperature Range Electrical Characteristics @25C unless otherwise specified Characteristic DC Current Gain Current Gain Group -16 -25 -40 Current Gain Group -16 -25 -40 Symbol Min Max Unit Test Condition VCE = 1.0V, IC = 100mA hFE 100 160 250 60 100 170 250 400 600 -- -- -- -- Thermal Resistance, Junction to Substrate Backside RqSB -- 320 K/W Note 1 Thermal Resistance, Junction to Ambient Air RqJA -- 400 K/W Note 1 VCE(SAT) -- 0.7 V IC = 500mA, IB = 50mA VBE -- 1.2 V VCE = 1.0V, IC = 300mA nA A VCE = 45V VCE = 25V, Tj = 150C nA Collector-Emitter Saturation Voltage Base-Emitter Voltage Collector-Emitter Cutoff Current ICES -- 100 5.0 Emitter-Base Cutoff Current IEBO -- 100 Gain Bandwidth Product Collector-Base Capacitance Notes: VCE = 1.0V, IC = 300mA VEB = 4.0V fT 100 -- MHz VCE = 5.0V, IC = 10mA, f = 50MHz CCBO -- 12 pF VCB = 10V, f = 1.0MHz 1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm2 area. DS11107 Rev. H-2 1 of 2 BC817-16/-25/-40 DS11107 Rev. H-2 2 of 2 BC817-16/-25/-40