MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-2HK * * * * * IC Collector current ........................ 100A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4-6.5 930.25 B2X B2 6 E2 9 B1X C1 62 C1 C2E1 10.5 6 B1 E1 15 30 E2 480.25 E2 B2 B2X C2E1 E1 B1 B1X 8 14 17 8 17 3 Tab#110, t=0.5 9.5 8 LABEL 37 17 1.8 16 3 21.5 30 3-M6 25 25 7 8 15.3 E2 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open IC Collector current -IC PC Parameter Conditions 7 V DC 100 A Collector reverse current DC (forward diode current) 100 A Collector dissipation TC=25C 800 W IB Base current DC 5 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 1000 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Charged part to case, AC for 1 minute Main terminal screw M6 -- Mounting torque Mounting screw M6 -- Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 1.96~2.94 N*m 20~30 kg*cm 1.96~2.94 N*m 20~30 kg*cm 470 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V -- -- 2.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open -- -- 2.0 mA IEBO Emitter cutoff current VEB=7V -- -- 400 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.5 V VBE (sat) Base-emitter saturation voltage -- -- 3.5 V -VCEO Collector-emitter reverse voltage -IC=100A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=100A, VCE=2.8V/5V 75/100 -- -- -- -- -- 3.0 s Switching time VCC=600V, IC=100A, IB1=-IB2=2A -- -- 15 s -- -- 3.0 s Transistor part (per 1/2 module) -- -- 0.155 C/ W Diode part (per 1/2 module) -- -- 0.65 C/ W Conductive grease applied (per 1/2 module) -- -- 0.075 C/ W IC=100A, IB=2A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 200 DC CURRENT GAIN hFE 160 IB=2.0A IB=1.0A 120 IB=0.6A 80 IB=0.4A IB=0.2A 40 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 VCE=2.0V Tj=25C 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0 3.4 BASE-EMITTER VOLTAGE 10 3 7 5 3 2 3.8 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 VBE(sat) 10 0 7 5 4 3 2 10 -1 VCE(sat) IB=2A Tj=25C Tj=125C 2 3 4 5 7 10 1 2 IC=50A IC=70A 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) ton, ts, tf (s) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 5 IC= 100A 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 4 VCE=2.8V 10 2 7 5 3 Tj=25C 2 Tj=125C 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 VBE (V) IC= 150A VCE=5.0V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 4 7 5 3 2 VCE (V) SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25C 10 2 7 5 3 2 VCC=600V IB1=-IB2=2A 10 1 7 5 3 2 ts tf 10 0 ton 7 5 3 Tj=25C 2 Tj=125C 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE 10 2 7 5 4 3 2 VCC=600V IC=100A IB1=2A Tj=25C Tj=125C ts 10 1 7 5 4 3 2 10 0 tf 10 -1 2 3 4 5 7 10 0 REVERSE BIAS SAFE OPERATING AREA 200 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) SWITCHING TIME VS. BASE CURRENT (TYPICAL) BASE REVERSE CURRENT -IB2 (A) 125 75 50 25 200 400 600 0.20 0.15 0.10 0.05 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 TIME (s) 1000 VCE (V) DERATING FACTOR OF F. B. S. O. A. SECOND BREAKDOWN AREA DERATING FACTOR (%) 90 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 4 5 7 0.25 800 COLLECTOR-EMITTER VOLTAGE 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) s 200 s 1m 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 0 100 tw=50s 100s DC 10 2 7 5 3 2 IB2=-5A 100 FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 IB2= -2A 150 0 2 3 4 5 7 10 1 Tj=125C 175 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 10 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 Tj=25C Tj=125C 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 1000 Irr (A), Qrr (c) 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 VCC=600V 5 IB1=-IB2=2.0A Tj=25C 4 Tj=125C 3 2 Irr Qrr 10 0 10 1 7 5 4 3 2 10 0 10 0 10 1 trr (s) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) trr 2 3 4 5 7 10 1 10 -1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 1.0 Zth (j-c) (C/ W) 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999