Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100DY-2HK
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
QM100DY-2HK
•ICCollector current ........................ 100A
•VCEX Collector-emitter voltage ......... 1000V
•hFE DC current gain...............................75
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
8
B2X
B2
C2E1
930
15.3 25 25 21.5 1.8
14 8
108
93±
0.25
B1X
C2E1 E2
C1
E2
E1
B1
10.5 6 15 6
48±
0.25
62
B2X
B1X
E2
C1
B2
E2
E1
B1
317 817 8 17 3
716
30
37
9.5
4–φ6.5
3–M6 Tab#110, t=0.5
LABEL
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
Typical value
Ratings
1000
1000
1000
7
100
100
800
5
1000
–40~+150
–40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
470
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=1000V, VEB=2V
VCB=1000V, Emitter open
VEB=7V
IC=100A, IB=2A
–IC=100A (diode forward voltage)
IC=100A, VCE=2.8V/5V
VCC=600V, IC=100A, IB1=–IB2=2A
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
2.0
400
2.5
3.5
1.8
—
3.0
15
3.0
0.155
0.65
0.075
MITSUBISHI TRANSISTOR MODULES
QM100DY-2HK
HIGH POWER SWITCHING USE
INSULATED TYPE
Feb.1999
0
10
1
10
–2
10
–1
10
2
10
1
10
0
10
–1
10
0
10
1
10
2
10
3
10
4
10
3
10
2
10
1
10
0
10
1
10
2
10
3
10
1
10
0
10
7
5
4
3
2
–1
10
7
5
4
3
2
1.8 2.2 2.6 3.0 3.4 3.8
V
CE
=2.0V
T
j
=25°C
–1
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
23457
1
10
23457
2
10
2
T
j
=25°C
T
j
=125°C
V
BE(sat)
V
CE(sat)
I
B
=2A
200
160
120
80
40
0012345
T
j
=25°C
I
B
=0.6A
I
B
=0.4A
I
B
=0.2A
I
B
=1.0A
I
B
=2.0A
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
T
j
=25°C
T
j
=125°C
V
CE
=2.8V
V
CE
=5.0V
753275327532
0
5
444
4
3
2
1
T
j
=25°C
T
j
=125°C
I
C
=70A
I
C
=50A
I
C
=
100A
I
C
=
150A
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
V
CC
=600V
I
B1
=–I
B2
=2A
t
s
t
on
t
f
T
j
=25°C
T
j
=125°C
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)SWITCHING TIME ton, ts, tf (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM100DY-2HK
HIGH POWER SWITCHING USE
INSULATED TYPE
Feb.1999
3
10
2
10
1
10
0
10
0
10 1
10
0
10
–3
10 –2
10 –1
10
3
10
2
10
1
10
0
10
0
10 1
10 2
10 3
10
100
80
60
40
20
00 20 60 100 120 16040 80 140
10
30
50
70
90
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
TC=25°C
DC
tw=50µs
1ms
100µs
200µs
75
753275327532
0.05
0.10
0.15
0.20
0.25
0
327532
444
44
0
7
5
3
2
7
5
3
2
7
5
3
2
0.4 0.8 1.2 1.6 2.0
Tj=25°C
Tj=125°C
2
10
7
5
4
3
2
1
10
7
5
4
3457 0
10 23457 1
10
–1
10 2
3
2
0
10
ts
Tj=25°C
Tj=125°C
IB1=2A
VCC=600V
IC=100A
tf
200
00 1000800600400200
50
100
150
75
125
175
25
IB2=–5A
Tj=125°C
IB2=
–2A
NON–REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME ts, tf (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –IC (A)
MITSUBISHI TRANSISTOR MODULES
QM100DY-2HK
HIGH POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
Feb.1999
0
10
0
10
1
10
–3
10
–2
10
–1
10
1
10
0
10
–1
10
2
10
1
10 75432
0
10 75432
0
1000
800
600
400
200
2
10
7
5
4
3
2
1
10
7
5
4
3
2
0
10
0
10
23457
1
10
23457
2
10
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
B1
=–I
B2
=2.0A
I
rr
Q
rr
t
rr
75
753275327532
0.2
0.4
0.6
0.8
1.0
0
327532
444
44
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE )
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM100DY-2HK
HIGH POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
trr (µs)
