DATA SH EET
Product specification
Supersedes data of April 1996 1996 Sep 17
DISCRETE SEMICONDUCTORS
BAV100 to BAV103
General purpose diodes
1/3 page (Datasheet)
M3D054
1996 Sep 17 2
Philips Semiconductors Product specification
General purpose diodes BAV100 to BAV103
FEATURES
•Small hermetically sealed glass
SMD package
•Switching speed: max. 50 ns
•General application
•Continuous reverse voltage:
max. 50 V, 100 V , 150 V and 200 V
respectively
•Repetitive peak reverse voltage:
max. 60 V, 120 V , 200 V and 250 V
respectively
•Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
•Switching in industrial equipment
e.g. oscilloscopes, digital
voltmeters and video output stages
in colour television.
DESCRIPTION
The BAV100 to BAV103 are switching diodes fabricated in planar technology,
and encapsulated in small hermetically sealed glass SOD80C SMD packages.
Fig.1 Simplified outline (SOD80C) and symbol.
Cathode indicated by green band.
handbook, 4 columns
MAM061
ka
1996 Sep 17 3
Philips Semiconductors Product specification
General purpose diodes BAV100 to BAV103
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BAV100 −60 V
BAV101 −120 V
BAV102 −200 V
BAV103 −250 V
VRcontinuous reverse voltage
BAV100 −50 V
BAV101 −100 V
BAV102 −150 V
BAV103 −200 V
IFcontinuous forward current see Fig.2; note 1 −250 mA
IFRM repetitive peak forward current −625 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs−9A
t = 100 µs−3A
t=1s −1A
P
tot total power dissipation Tamb =25°C; note 1 −400 mW
Tstg storage temperature −65 +175 °C
Tjjunction temperature −175 °C
1996 Sep 17 4
Philips Semiconductors Product specification
General purpose diodes BAV100 to BAV103
ELECTRICAL CHARACTERISTICS
Tj=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
IF= 100 mA −1.0 V
IF= 200 mA −1.25 V
IRreverse current see Fig.5
BAV100 VR=50V −100 nA
VR= 50 V; Tj= 150 °C−100 µA
BAV101 VR= 100 V −100 nA
VR= 100 V; Tj= 150 °C−100 µA
BAV102 VR= 150 V −100 nA
VR= 150 V; Tj= 150 °C−100 µA
BAV103 VR= 200 V −100 nA
VR= 200 V; Tj= 150 °C−100 µA
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6 −5pF
t
rr reverse recovery time when switched from IF= 30 mA to
IR= 30 mA; RL= 100 Ω;
measured at IR= 3 mA; see Fig.8
−50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 300 K/W
Rth j-a thermal resistance from junction to ambient note 1 375 K/W
1996 Sep 17 5
Philips Semiconductors Product specification
General purpose diodes BAV100 to BAV103
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0 100 200
300
200
0
100
MBH278
Tamb (oC)
IF
(mA)
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
012
600
0
200
400
MBG459
VF (V)
IF
(mA)
(1) (2) (3)
(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
handbook, full pagewidth
MBG703
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
1996 Sep 17 6
Philips Semiconductors Product specification
General purpose diodes BAV100 to BAV103
Fig.5 Reverse current as a function of junction
temperature.
handbook, halfpage
0 100 Tj (oC) 200
103
102
10−1
10−2
10
1
IR
(µA)
MGD009
VR=V
Rmax.
Solid line; maximum values.
Dotted line; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
01020
1.6
1.4
1.0
0.8
1.2
MGD005
VR (V)
Cd
(pF)
Fig.7 Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
handbook, halfpage
0 200
300
0
100
200
MBG700
100
(1)
(4)
VR
(V)
Tamb (oC)
(2)
(3)
(1) BAV103.
(2) BAV102.
(3) BAV101.
(4) BAV100.
1996 Sep 17 7
Philips Semiconductors Product specification
General purpose diodes BAV100 to BAV103
Fig.8 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR= 1 mA.
1996 Sep 17 8
Philips Semiconductors Product specification
General purpose diodes BAV100 to BAV103
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.9 SOD80C.
Dimensions in mm.
handbook, full pagewidth
MBA390 - 2
1.60
1.45
3.7
3.3
0.3 0.3
O
