VDRM VRRM IPULSE VDcmax = = = = 4.5 18 110 2.8 kV V kA kV High Current High di/dt Switch for Pulsed Power Applications 5STH 30J4501 * * * * * * * * Features Asymmetric Design For Single or Repetitve Pulse Applications Very High di/dt Capability Free Floating Silicon Technology Glazed Ceramic Presspack Housing High Interdigitated Gate Stucture Optimized as Closing Switch High Reliability Electrical Data VDRM Repetitive peak of-state voltage 4.5 kV Tj = 125C VRRM Repetitive reverse blocking voltage 18 V Tj = 125C VDC Permanent DC voltage for 100 FIT failure rate 2.8 kV At Tj 125 C. Ambient cosmic radiation at sea level in open air. IPULSE Max. Pulse Current 110 kA Half sine wave, Tj 50C, tp 250 s di/dt Max. current rate of rise 20 kA/s 1 Hz VGT Max. Gate trigger voltage 4.0 V IGT Recomm. Gate trigger current 120 A 2 6 T = 20s 2 Limiting load integral VT0 Threshold voltage 1.24 V Tj = 50C / Tj = 125C rT Slope resistance 0.28 m Tj = 50C 0.30 m Tj = 125C 2.08 V Tj = 50C, IT = 3000A 2.14 V Tj = 125C, IT = 3000A tdon Voltage Drop Turn-on delay time As tp = 250 s, Tj = 50C It VT 1.5 x10 diG/dt (min) 100 A/s Tj = 25 0.9 s ABB Switzerland Ltd reserves the right to change specifications without notice Pulse Power Device Mechanical Data FM Mounting force min. 36 kN max. 44 kN Dp Pole-piece diameter 75 mm H Housing thickness 26 mm M Weight 1,5 kg DS Surface creepage distance 33 mm Da Air strike distance 15 mm Thermal Data TA Ambient Temp. min. - 40 C max. 125 C Tvjm Max. Junction Temperature RthJC Thermal resistance junction - case 125 C 0.022 K/W (anode side cooling) 0.027 K/W (cathode side cooling) 0.012 K/W (double side cooling) RthCH Thermal resistance case - heatsink 0.006 K/W (one side cooled) 0.003 K/W (double side cooled 122 ABB Switzerland Ltd, Semiconductors Pulse Power Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Tel.: +41-58-586-1742 Fax: +41-58-586-1310 E-Mail: pulsepower.abbsem@ch.abb.com Internet: www.abb.com/semiconductors 5STH 30J4501