3LN01S Ordering number : EN6957B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN01S General-Purpose Switching Device Applications Features * * * Low ON-resistance Ultrahigh-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Symbol Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Unit 30 V 0.15 A 0.6 A 0.15 W Channel Temperature PD Tch 150 C Storage Temperature Tstg --55 to +150 C Allowable Power Dissipation PW10s, duty cycle1% V 10 This product is designed to "ESD immunity < 200V*", so please take care when handling. * Machine Model Package Dimensions Product & Package Information unit : mm (typ) 7013A-013 * Package : SMCP * JEITA, JEDEC : SC-75, SOT-416 * Minimum Packing Quantity : 3,000 pcs./reel 3LN01S-TL-E 1.6 0.8 0.4 Packing Type: TL Marking 0.3 0 to 0.1 0.75 0.6 0.1 3 0.1 MIN YA LOT No. 1 2 LOT No. 1.6 0.5 0.5 0.2 0.4 TL 1 : Gate 2 : Source 3 : Drain Electrical Connection 3 SANYO : SMCP 1 2 http://semicon.sanyo.com/en/network 62712 TKIM/41006PE MSIM TB-00002189/60801 TSIM TA-1922 No.6957-1/7 3LN01S Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V 30 IGSS VGS(off) | yfs | VGS=8V, VDS=0V VDS=10V, ID=100A 0.4 VDS=10V, ID=80mA 0.15 RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ciss V 1 A 10 A 1.3 0.22 V S 7.0 pF Output Capacitance Coss 5.9 pF Reverse Transfer Capacitance Crss 2.3 pF Turn-ON Delay Time td(on) tr 19 ns 65 ns 155 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA 120 ns 1.58 nC 0.26 nC 0.31 IS=150mA, VGS=0V 0.87 nC 1.2 V Switching Time Test Circuit VDD=15V VIN 4V 0V ID=80mA RL=187.5 VIN PW=10s D.C.1% P.G D VOUT G 3LN01S 50 S Ordering Information Device 3LN01S-TL-E Package Shipping memo SMCP 3,000pcs./reel Pb Free No.6957-2/7 3LN01S 0.08 VGS=1.5V 0.06 0.04 0.15 0.10 0.05 0.02 0 0.2 0.4 0.6 0.8 0 1.0 Drain-to-Source Voltage, VDS -- V 0.5 1.0 1.5 2.0 2.5 VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- 9 8 7 ID=80mA 40mA 5 IT00030 RDS(on) -- ID 10 Ta=25C 6 3.0 Gate-to-Source Voltage, VGS -- V IT00029 RDS(on) -- VGS 10 Static Drain-to-Source On-State Resistance, RDS(on) -- 25C 0 0 C Ta= --25 C 0.20 75 C Drain Current, ID -- A 0.10 Ta =7 5 C --2 5C 5V V 3.0 4.0 0.25 2 6.0 V Drain Current, ID -- A 0.12 .0V 2. 3.5 V VDS=10V V 0.14 ID -- VGS 0.30 25 ID -- VDS 0.16 4 3 2 7 5 Ta=75C 25C 3 --25C 2 1 1.0 0.01 0 0 1 2 3 4 5 7 6 8 9 Gate-to-Source Voltage, VGS -- V 10 Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- Ta=75C 25C --25C 2 1.0 0.01 2 3 5 7 2 0.1 3 Drain Current, ID -- A V 40 =4.0 I D= , VGS A 80m I D= 4 3 2 1 0 --60 --40 --20 0 20 40 60 80 3 2 10 Ta=75C 7 5 --25C 3 25C 2 2 3 5 100 Ambient Temperature, Ta -- C 120 140 160 IT00035 7 0.01 2 3 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S Static Drain-to-Source On-State Resistance, RDS(on) -- , mA 5 IT00032 VGS=1.5V 5 IT00034 | yfs | -- ID 1.0 5V =2. V GS 3 RDS(on) -- ID IT00033 6 5 2 0.1 5 1.0 0.001 5 RDS(on) -- Ta 7 7 7 7 3 5 100 VGS=2.5V 5 3 Drain Current, ID -- A RDS(on) -- ID 10 2 IT00031 VDS=10V 7 5 3 25C Ta= -- 2 25C 75C 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 5 IT00036 No.6957-3/7 3LN01S IS -- VSD 1.0 7 C 25 7 --2 5 75 C C 2 5 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V 3 td(off) tf 2 100 7 tr 5 3 td(on) 2 Gate-to-Sourse Voltage, VGS -- V 3 2 10 Ciss Coss 3 Crss 2 5 7 2 0.1 IT00038 VGS -- Qg VDS=10V ID=150mA 9 5 3 Drain Current, ID -- A 10 5 7 2 IT00037 f=1MHz 7 Ciss, Coss, Crss -- pF 5 10 0.01 1.2 Ciss, Coss, Crss -- VDS 100 VDD=15V VGS=4V 7 Switching Time, SW Time -- ns 3 Ta = Source Current, IS -- A 5 0.1 SW Time -- ID 1000 VGS=0V 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 20 IT00039 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00040 PD -- Ta 0.20 Allowable Power Dissipation, PD -- W 18 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT01961 No.6957-4/7 3LN01S Embossed Taping Specification 3LN01S-TL-E No.6957-5/7 3LN01S Outline Drawing 3LN01S-TL-E Land Pattern Example Mass (g) Unit 0.003 mm * For reference Unit: mm 0.7 1.3 0.7 0.7 0.6 0.5 0.5 No.6957-6/7 3LN01S Note on usage : Since the 3LN01S is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.6957-7/7