GENL INSTR/ POWER J3E D MM 3490137 0004853 1 MGIC 723-05 RW005G THRU RW08G MINIATURE FAST RECOVERY GLASS PASSIVATED SINGLE - PHASE SILICON BRIDGE RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT - 1.5 Amperes FEATURES @ Glass passivated chip junctions ee, Plastic material used carries Underwriters 7 Laboratory flammability recognition 94V-O 100 4 oD) @ High case dielectric strength | Typical Ip less than 0.1 pA 1.0 MIN. Fast switching for high efficiency High overload surge capability __ deal for printed circuit board -032(.81) aon {960 11.82) High temperature soldering guaranteed: .220(5.6) 265 C/10 seconds /.375", (9.5mm) lead + -180(4.6) length/5Slbs., (2.3 kg) tension +348 (8. 84) -908 (7,82) 4 iT MECHANICAL DATA | 2205.6) Case: Molded plastic 8014.6) Terminals: Leads solderable per MIL-STD-202, Method 208 Dimensions in inches and (millimeters) Mounting Position: Any Weight: 0.04 ounce, 1.1 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified. 60 Hz, resistive or inductive load. RW RW RW AW RW RW SYMBOLS 005G 1G 02G 04G = 066 08G =OUNITS Maximum Recurrent Peak Reverse Voltage Vrru | 50 100 | 200 | 400 | 600 | 800 | Volts Maximum RMS Voltage Vams | 35 70 140 | 280 | 420 | 560 |Volts Maximum DC Blocking Voltage Voc | 50 100 | 200 | 400 | 600 | 800 {Volts Maximum Average Forward Rectified Current at 375",(9.5mm) lead length at Ta = 25C AY) 1.5 Amps Peak Forward Surge Current Single sine-wave superimposed on rated load (JEDEC Method} IFsM 50.0 Amps Rating for fusing (t<8.3ms) It 10.0 As Maximum Instantaneous Forward Voitage Drop per element at 1.0 Ampere VE 1.3 Volts Maximum DG Reverse Current at Rated Ta =25C 5.0 DC Blocking Voltage per Bridge Element Ta = 125C IR 500 pA Typical Junction Capacitance per element (Note 1) Cy 25.0 pf Maximum Reverse Recovery Time per element (Note 3) Ty = 25C TRR 200 350 ns Typical Thermal Resistance (Note 2) R@JA 36.0 CW Operating Temperature Range Ta -55 to +150 -55 to +125 Cc Storage Temperature Range TstG -55 to +150 C NOTES: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts. 2. Thermal Resistance from Junction to Ambient at .375", 9.5mm lead length P.C. Board mounting. 3. Reverse Recovery Test Conditions: IF = 0.5A, IR = 1.0A, lrr= 0.25A. GENL INSTR/ POWER 38E D MM@ 3890137 0004854 3 MGIC 7-23-05 RATINGS AND CHARACTERISTIC CURVES RWO005G THRU RWO08G FIG. 1 - DERATING CURVE FIG. 2 - MAXIMUM NON-REPETITIVE OUTPUT RECTIFIED CURRENT PEAK FORWARD SURGE CURRENT 1.50 1 : - 60 5 1-60 Hz Resstve | | | 5 a 1.25 or Inductive Load ' ive) 5 2 . PC Board 9 oe 7 x 50 Ox | | 2 w1.00 == _ og + ee 4 O 40 ts Copper Pads On 2<x 78 R22 x 22 (55% 55mm), cw ac . i SS = 50 400V DC 49 OF RAN ecco Ba0V | oi iG 80 tL 25 ly Wu + . Oe c oc Capac tive at 20 a4 ~oacs, = neal 1.0 Cycle LB 26 F ipkiay " x Ta = 25C > j ier Legh | 1 9 10} Single Sine-Wave < ol - | x (JEDEC Method) 0 20 40 80 80 100 120 140 160 < 0 2 AMBIENT TEMPERATURE, C t 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60 Hz FIG, 3 - TYPICAL FIG, 4 - TYPICAL FORWARD VOLTAGE REVERSE CHARACTERISTICS CHARACTERISTICS PER ELEMENT 20 Ty = 25C Puise Width = 300 ps 1% Duty Cycle Ta = 100C INSTANTANEOUS AEVEASE CURRENT, MICROAMPE RES INSTANTANEOUS FORWARD CURRENT, AMPERES Ot Q 20 40 60 80 100 120 140 PERCENT OF RATED PEAK oe Oe ea 8 REVEASE VOLTAGE INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG. 6 - TYPICAL TRANSIENT FIG. 5 - TYPICAL JUNCTION CAPACITANCE THERMAL IMPEDANCE PER BRIDGE ELEMENT 100 100 60 40 a a Ny o 20 ReJA, THERMAL IMPEDANCE (C/W) po oo oa Qo a 4 Ty = 25C f= 1MHz Vsig = SOmVp-p CAPACITANCE, pF wo EX) i 2 4 10 2 4 10 20 40) #100 REVERSE VOLTAGE, VOLTS 01 a1 1 10 100 HEATING TIME (SEC) GENERAL INSTRUMENT CORPORATION Power Semiconductor Division Headquarters: 600 West John Street, CS620, Hicksville, NY 11802-1620, (516)933-3333 * TWX 310-376-8690 FAX 516-933-3881 North Eastern Regional Sales Office: 120 Andrews Road, Hicksville, N Y 11801-1702, (516)933-3200 + TWX: 310-376-7238 FAX 516-433-4412 South Eastern Regional Sales Office: 6855 Jimmy Carter Blvd , Suite 2250. 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Tel 02/66010274-66010285-66010287 * Telex 320348 FAX 02/66010324 United Kingdom General instrument (UK) Limited, Power Semiconductor Div., Cheiworth Industral Estate, Cricklade, Swindon, Wiltshire, England SN6 6HQ, * Tel: (0793)752307 * FAX (0793) 751419 Power Semiconductor Div - Semitron Industries Limited, Chelworth Industrial Estate, Cricklade, Swindon, Wiltshire, England SN6 6HQ, *Tel (0793) 751151 * FAX: (0793)751808+ Telex: 44848 Taiwan General Instrument of Taiwan, Lid , 233 Pao Chiao Road, Hsin Tien, Taiper, Taiwan, Tel: 9113860 FAX 9-011-8862-917-5991 Japan General Instrument Japan, Ltd , 5F4-1-13 Toranomon, Minato-Ku, Tokyo, Japan 105, Tel (03)437-0281 + FAX 9-011-81-3434-3938(GIJ) Hong Kong General! Instrument Hong Kong Ltd., Rm 1104-1107, Tower B, Mandarin Plaza, 14 Science Museum Rd., Tsimshatsu East, Kowloon, Hong Kong, Tel 3-7226577 + Telex 54606 GIHKHX * FAX (852) 3-7239239 RUMEN INSTRU