Monolithic InGaP HBT MMIC Amplier
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Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
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IF/RF MICROWAVE COMPONENTS
Electrical Specications at 25°C and 36mA, unless noted
ERA-8SM+
Absolute Maximum Ratings
Parameter Ratings
Operating Temperature* -45°C to 85°C
Storage Temperature -65°C to 150°C
Operating Current 65mA
Power Dissipation 250mW
Input Power 13dBm
Note: Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
1Case is dened as ground leads.
*Based on typical case temperature rise 5°C above ambient.
Parameter Min. Typ. Max. Units Cpk
Frequency Range* DC 2 GHz
Gain f=0.1 GHz 29.3 31.5 32.3 dB ≥ 1.5
f=1 GHz 22.9 24.4 25.9
f=2 GHz 19
f=3 GHz 15
f=4 GHz 12
Magnitude of Gain Variation versus Temperature
(values are negative)
f=0.1 GHz .0079 .016 dB/°C
f=1 GHz .0071 .016
f=2 GHz .0076 .016
f=3 GHz .0089
f=4 GHz .0095
Input Return Loss f=0.1 GHz 14.5 dB
f=1 GHz 16
f=2 GHz 15
f=3 GHz 13
f=4 GHz 10
Output Return Loss f=0.1 GHz 12 dB
f=1 GHz 13.5
f=2 GHz 12
f=3 GHz 10
f=4 GHz 8
Reverse Isolation f=2 GHz 20 23 dB
Output Power @ 1 dB compression f=0.1 GHz 12.5 dBm ≥ 1.33
f=1 GHz 10 12.5
f=2 GHz 10.5
f=3 GHz 7.5
Saturated Output Power
(at 3dB compression)
f=0.1 GHz 14.9 dBm
f=1 GHz 13.7
f=2 GHz 11.9
f=3 GHz 8.7
Output IP3 f=0.1 GHz 24 27 dBm ≥ 1.33
f=1 GHz 22 25
f=2 GHz 18 21.5
f=3 GHz 18
Noise Figure f=0.1 GHz 2.2 3 dB
f=1 GHz 2.8 3.8
f=2 GHz 3 4
Group Delay f=1 GHz 130 psec
Recommended Device Operating Current 36 mA
Device Operating Voltage 3.5 3.7 3.9 V ≥ 1.5
Device Voltage Variation vs. Temperature at 36mA -0.5 mV/°C
Device Voltage Variation vs. Current at 25°C 6.4 mV/mA
Thermal Resistance, junction-to-case1140 °C/W
*Guaranteed specication DC-2 GHz. Low frequency cut off determined by external coupling capacitors.