This is information on a product in full production.
January 2015 DocID024261 Rev 3 1/9
9
T1235T-8FP
12 A Snubber less™ T r i ac
Datasheet − production data
Features
•Medi um current Triac
•High static and dynamic commutation
•Three quadrant s
•ECOPACK®2 compliant component
•Compl ies with UL stan dards (File ref: E81734)
Applications
•General purpo se AC line load switching
•Motor control circuits
•Sm all home applianc es
•Lighting
•Inrush current limiting circuits
•Overvoltage crowbar protection
Description
Available in through-hole full pack package, the
T1235T-8FP Triac can be used for the on/off or
phas e angle control function in general purpose
AC switching where high commutation capability
is required. This device can be used without a
snubber circuit when the limits defined in this
datasheet are respected.
Provides UL certified insulation rated at 2 kV.
TM: Snubberless is a trademark of STMicroelectronics
Table 1. Device summary
Symbol Value Unit
IT(rms) 12 A
VDRM, VRRM 800 V
VDSM, VRSM 900 V
IGT 35 mA
A1
A2
G
A2
A1
G
TO-220FPAB
(T1235T-8FP)
www.st.com
Characteristics T1235T-8FP
2/9 DocID024261 Rev 3
1 Characteristics
Table 2. Ab solute ratings (limiting values, Tj = 25 °C un le ss other wise stated)
Symbol Parameter Value Unit
IT(rms) On-stat e rms current ( full sine wave) Tc = 99 °C 12 A
ITSM Non repetitive surge peak on -state
cu rrent (f ull cycle, Tj initial = 25 °C) F = 50 Hz t = 20 ms 90 A
F = 60 Hz t = 16.7 ms 95
I²tI
²t val u e fo r fu s in g , T j initi a l = 25 ° C tp = 10 ms 54 A²s
VDRM,
VRRM Repetitive surge peak off-state voltage Tj = 150 °C 600 V
Tj = 125 °C 800
VDSM,
VRSM Non repetitive surge peak off-state volt age tp = 10 ms 900 V
dI/dt Cri tical rate of rise of on-st ate current
IG = 2 x IGT, tr ≤ 100 ns F = 100 Hz 100 A/µs
IGM Pe ak gate current tp = 20 µs Tj = 150 °C 4 A
PG(AV) Average gate power dissipation Tj = 150 °C 1 W
Tstg
Tj
St orage junction temperature range
Ope rating juncti on temperature range - 40 to + 150
- 40 to + 150 °C
TLMaximum lead temperature for soldering during 10 s 260 °C
Vins Insulati on rms voltage, 1 minute 2 kV
Table 3. Elec trical characteri stics (Tj = 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant Value Unit
IGT (1)
1. Minimum IGT is guaranteed at 5% of IGT ma x.
VD = 12 V, R L = 30 ΩI - II - III Min. 1.75 mA
Max. 35
VGT VD = 12 V, R L = 30 ΩI - II - III Ma x . 1.3 V
VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C I - II - III Min. 0.2 V
IH (2)
2. For both polari ties of A2 refere nced to A1
IT = 500 mA Max. 40 mA
ILIG = 1.2 IGT I - III Max. 60 mA
II 65
dV/dt VD = 536 V, gate open Tj = 125 °C Min. 2000 V/µs
VD = 402 V, gate open Tj = 150 °C 1000 V/µs
(dI/dt)c Without snubber (dV/dt)c > 20 V/µs) Tj = 125 °C Min. 12 A/ms
Tj = 150 °C 6
DocID024261 Rev 3 3/9
T1235T-8FP Characteristics
Table 4. St atic characteristics
Symbol Test condit ions Value U nit
VT (1) ITM = 17 A, tp = 380 µs Tj = 25 °C Max. 1.55 V
Vt0 (1) Threshold voltage Tj = 150 °C Max. 0.85 V
Rd (1) Dynamic resistance Tj = 150 °C Max. 37 mΩ
IDRM
IRRM
VDRM = VRRM = 800 V Tj = 25 °C Max. 7.5 µA
Tj = 125 °C 1 mA
VDRM = VRRM = 600 V Tj = 150 °C Max. 2.7
1. For both polarities of A2 referenced to A1
Table 5. Thermal resistance
Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) 3.5 °C/W
Rth(j-a) Junct ion to ambient 60 °C/W
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle) Figure 2. On-state rms current versus case
temperature (full cycle)
P(W)
0
2
4
6
8
10
12
14
16
024681012
180°
I(A)
T(RMS)
I(A)
T(RMS)
0
2
4
6
8
10
12
14
0 25 50 75 100 125 150
T (°C)
C
Figure 3. On-st ate rms current versus ambient
tempe rature (free air convecti on) Figure 4. Relative variation of therm al
impeda nce vers us pu lse duration
I(A)
T(RMS)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150
T (°C)
a
K = [Zth / Rth]
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04
Zth(j-c)
Zth(j-a)
tp(s)
Characteristics T1235T-8FP
4/9 DocID024261 Rev 3
Figure 5. On-state characteristics (maximum
values) Figure 6. Surge peak on-state current versus
number of cycl es
I(A)
TM
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Tj=25 °C
Tj=150 °C V (V)
TM
T max:
j
V = 0.85 V
t0
R = 37 m
dW
I(A)
TSM
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
One cycle
t = 20 ms
Number of cycles
Non repetitive
T initial = 25 °C
j
Repetitive
T = 99 °C
c
Figure 7. Non repetitive surge peak on-state
current and corresponding values of I2tFigure 8. Relative variation of gate trigger
current and gate voltage versus junction
temperature (typical values)
I (A), I²t (A²s)
TSM
10
100
1000
0.01 0.10 1.00 10.00
sinusoidal pulse with width t <10 ms
pt(ms)
p
I²t
ITSM
T initial = 25 °C
j
dl/dt limitation: 100 A / µs
I , V [T ] / I , V [T = 25 °C]
GT GT j GT GT j
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
T (°C)
C
VGT
I Q1 - Q2
GT
IQ3
GT
Figure 9. Relative variation of static dV/dt
immunity versus junction temperature (typical
values)
Fi gure 10 . R elative va riati on of holdin g current
and latching current vers us junction
temperature (typical values)
0
1
2
3
4
5
25 50 75 100 125 150
dV/dt [Tj] / dV/dt [Tj= 150 °C]
T
j
(°C)
V
D
=V
R
= 402 V
I , I [T ] / I , I [T = 25 °C]
HL j HL j
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
I
H
I
L
T (°C)
j
DocID024261 Rev 3 5/9
T1235T-8FP Characteristics
Figure 13. Relative variation of leakage current versus junction temperature for different values of
blocking voltage (typical values)
Figure 11. Relative variation of critical rate of
decrease of main current (dI/dt)c versus
reap pl ied (dV /dt)c
Figur e 12. Relative variation of critical rate of
decrease of main current (dI/dt)c versu s
juncti on temperatur e (typical values)
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
0
1
2
3
4
0.1 1.0 10.0 100.0
(dV/dt)c (V/µs)
(dl/dt)c [T ] / (dl/dt)c [T = 150 °C]
jj
0
1
2
3
4
5
6
7
8
9
25 50 75 100 125 150
T (°C)
j
I , I [T ; V , V ] / I , I
DRM RRM j DRM RRM DRM RRM
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125 150
[Tj=125 °C; 800 V]
[Tj=150 °C; 600 V]
T (°C)
j
V = V = 600 V
DRM RRM
V = V = 400 V
DRM RRM
V = V = 800 V
DRM RRM
Pack age information T1235T-8F P
6/9 DocID024261 Rev 3
2 Package information
•Lead-free package
•Recomm ended t orque: 0.4 to 0.6 N ·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® pack ages, depe nding on their level of environmen tal compliance. ECO PACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark .
Figure 14. TO-220FPAB dimension definitions
H
A
B
Dia
L7
L6
L5
F1
F2
F
D
E
L4
G1
G
L2
L3
DocID024261 Rev 3 7/9
T1235T -8FP Package informati on
Table 6. TO-220FPAB dimensi on values
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ . 0.63 T yp.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
Order ing informati on T1235T-8F P
8/9 DocID024261 Rev 3
3 Ordering information
Figure 15. Ordering information scheme
4 Revision history
Table 7. Ordering information
Or der code M arking Pack age Weight Base qty Deliv ery m ode
T1235T-8FP T1235T-8FP TO-220FPAB 2.0 g 50 Tube
T 12 35 T - 8 FP
Triac
Current
12 = 12 A
Gate sensitivity
35 = 35 mA
Specific application
T = Increased (dI/dt)c and dV/dt producing reduced ITSM
Voltage (VDRM, VRRM)
8 = 800 V
Package
FP = TO-220FPAB
Table 8. Document revision history
Date Revision Changes
27-May-201 3 1 Initial releas e.
12-June-2013 2 Added UL certification inform ati on.
14-Jan-2015 3 Updated Features, Table 2 and Table 5.
DocID024261 Rev 3 9/9
T1235T-8FP
Mouser Electronics
Authorized Distributor
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T1235T-8FP