DINTEIRSIL 1H5003/IH5004 2-Channel Drivers with c FA URES silabl for Nulling Charge Injection Voltage SPST FET Switches @ Each Channel CompleteInterfaces With Most Integrated . Logic AND Gate Available @ Low OFF Power Dissipation, 1 mW @ Switches Analog Signals up to 20 Volts Peak-to-Peak @ Low rpsion). 302 Max on 1H5003 GENERAL DESCRIPTION and D/A converter applications, which permits logic desigri directly with the switch function. Logic 1 at the input These switching circuits contain two channels in one pack- turns the FET switch ON, and logic O turns it OFF. The age, each channel consisting of a driver circuit controlling gate lead of the FETs has been brought out to enable the a SPST junction FET switch. The driver interfaces DTL, application of a referral resistor for nulling out offset volt- TTL, or RTL logic signals for multiplexing, commutating, age due to charge injection. PIN CONFIGURATIONS eT of 1 14] ] s: we [2 131] ing st G1 { 3 12 1 vo v- we [4 nf} VENABLE) ae []s 10 [] VaerENaetey Int NIC U 03 q of] ini By) i s2 ~ OUTLINE DWGS JD, DD, PD OUTLINE DWG FD-2 SCHEMATIC AND LOGIC DIAGRAMS 1H5003 (rpsion) = 3082) 1H5004 (rpsion) = 502) vt n 06 HK athe. Ft a) 03 i WL Fi. 4% (EwARLED ORDERING INFORMATION IH5003 M FD TL Package OD 14-Pin Ceramic DIP (Special Order Only) FD 14-Pin Flat Package PD - 14-Pin Plastic DIP JD 14-Fin CERDIP Temperature Range M Mititary (-55C to +125C) 1 Industrial (-20C to +86C)} Device Type NOTE: Military temperature range not available in plastic package. vt eee ow ee Va (ENABLED 3-85 1IH5003/5004 ABSOLUTE MAXIMUM RATINGS Analog Signal Voltage (Va - V~ or Vt - Va) 30V Total Supply Voltage (Vt - V7) 36V Pos. Supply Voltage to Ref, Voltage (vt- Vr) 25V Ref. Voltage to Neg. Supply Voltage (VR - V7) 22V Power Dissipation (Note) 750 mW Current (Any Terminal) 30 mA. Storage Temperature -65 to +150C Operating Temperature -55 to +125C Lead Temperature (Soldering, 10 sec) 300C ELECTRICAL CHARACTERISTICS INTERSIL NOTE: Dissipation rating assumes device is mounted with ail !eads welded or soldered to printed circuit board in ambient tem- perature below 70C. For higher temperature, derate at rate of 10 mW/C. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to abso- lute maximum rating conditions for extended periods may affect device reliability. . Applied Voltages for all tests: Vt = +12V, V7 = -18V, GND = 0. Input test condition which guarantees FET switch ON or OFF as specified is used for output and power supply specifications. SYMBOL ABSOLUTE MAX LIMIT YP a a INIT! ON (NOTE) CHARACTERISTIC TYPE ~55 | 26 | 128 UNITS; TEST CONDITIONS i [| Venton Input Voltage-ON 2.9 min} 2.6 min] 2.0 min Volts {| V7 =-12V N , VINIOFF) Input Voitege-OF F Both 14 1.0 0.6 Volts | V7 =-12V TT Linton input Current Circuits 60 60 UA Vy = 2.5V lintorr) Input Leakage Current 0.1 0.1 2 HA {Vi_ = 0.8V Drain-Source ON tH5003 30 50 Q s r . Vp = 10V, Is = TMA Wo[ osON Resistance 16004 50 | 8 a |? s Ty . ID (on)* tscon) | Drive Leakage Current 2 100 nA 1 Vp = Vs = ~10V ( Both T = ze N IstorF) Source Leakage Current Circuits 1 100 nA | Vs = 10V. Vp 10V IDIoFF) Drain Leakage Current 1 100 n& 1Vo = 10V, Vs =-10V | + 4] Positive Power Supply 3 mA Drain Current is Negative Power Supply -18 mA | One Driver ON, Vin = 2.5V 6 Drain Current x w Reference Power Sup- Eg - n | REF ply Drain Current Both 14 mA s Positive Power Supp! Circuits u + ply p LK Leakage Current 2 HA C Negative Power Supply Both Orivers OFF - =! Mux Leakage Current 36 HA Vin = O.8V Reference Power Sup- IRLK ply Leakage Current ~25 HA & | ton Turn-ON Time Both 0.3 0.5 MS i oe See Below S | tote Turn-OFF Time Circuits 0.8 12 Ls ET Pon ON Driver Power Both 175 mW j{ Both Inputs Vin = 2.5 w ar | Porr OFF Driver Power Circuits 1 mW | Both Inputs Vin = 1V F Gate Source Both : Vol 21 A. Vos = Vas Forward Voltage Circuits 16 alts fig = 1.0 mA, Vos = 0 NOTE: (OFF) and (ON) subscript notation refers to the conduction state of the FET switch for the given test. SWITCHING TIMES (at 25C) * sev vin w owes L<Otm 28 us <Ote0 : Hen we errel me) \e i> OFF MODEL tae ~av 3-86