esc ) @ a2asbos OOO4Leb L MESIEG : 25C 04126 D PNP Silicon Transistors - -__- Bc 204 SIENENS AKTIENGESELLSCHAF 7 > &9-/7 Be sos BC 201, BC 202, and BC 203 are epitaxial PNP silicon planar transistors of miniature design in U 32 plastic package. The types are marked by a green (BC 201), blue (BC 202), and grey (BC 203) color line on the case. The transistors are particularly intended for use in low noise AF amplifiers and as complementary transistors to BC 121, BC 122, and BC 123. Type Ordering code BC 201") Q62702-C149 Current gain BC 201 white Q62702-C167 03 BC 201 yellow 0Q62702-C168 3 BC 201 green Q62702-C310 = BC 201 blue Q62702-C170 BC 2021) Q62702-C150 BC 202 white Q62702-C172 BC 202 yellow Q62702-C173 Approx. weight 20g Dimensions in mm BC 202 green Q62702-C361-X1 BC 202 bfue Q62702-C175 BC 203") Q62702-C151 BC 203 white Q62702-C177 BC 203 yellow Q62702-C178 BC 203 green Q62702-C362 Maximum ratings BC 201 BC 202 BC 203 Collector-emitter voltage -Vczco | 5 20 30 Vv Collector-base voltage ~Vepo | 5 30 45 Vv Emitter-base voltage Veso | 5 5 5 Vv Collector current -Ic 75 75 75 mA Emitter current Ig 85 85 85 mA Base current -k 10 10 10 mA Junction temperature Tj 150 150 | 150 C Storage temperature range Tetg 55 ta +125 C Total power dissipation [lead length "L = 2 mm; see diagram Rin =F (L)] Prot 250 250 250 mw Thermal resistance see diagram?) Ryn, = f (L) Rusa | <1000 | <1000 | <1000 {| Kw 1) if the order does not include any exact indication of the current amplification group desired, a transistor of a current amplification group just available from stock will be delivered. (page 175) 172 1602 c-01 25 D mm A23SEOS OOONLE? 3 MMSTEG | 4 29/7 eee r - 0 S AKTIENGESELLSCHAF BC 201 SIEMEN BC 202 BC 203 Static characteristics (Tanp = 25C) The transistors are grouped according to their small-signal current gain hg, and are marked with a color line. At a collector-emitter voltage of Vog = 2 V and the collector currents stated below the following static characteristics apply. . hg group white yellow green blue Type BC 201 BC 201 BC 201 BC 201 BC 201 BC 202 BC 202 BC 202 BC 202 BC 202 BC 203 BC 203 BC 203 BC 203 BC 203 wIc Me hte Ne Na Vee mA Io/In Tolle Ic/Tp Io/la Vv 0.25 100 175 290 520 0.58 (0.52 to 0.68) Static characteristics (Tap = 25C) Saturation voltages | Veesat | Veesat | (-Ig = 10 mA; ~/g = 0.5 mA) | 0.1 (<0.2) | 0.7 (<0.8) | Vv (-Ig = 50 mA; Jg = 2.5 mA) 0.18 (<0.35) 0.8 (<0.92) Vv BC 201 BC 202 BC 203 Collector cutoff current (-Vop =2V) -Icpo 2 (< 100) - - nA Collector cutoff current (-Vcp = 15 V) -leao - 2(<100) | - nA Collector cutoff current (-Veg = 25 V) Icgo0 - - 2 (<100}| nA Collector-emitter breakdown voltage (Jcg = 100 pA) -Vieryceo | 5 20 30 Vv Collector-base breakdown voltage (-Icg = 100 pA) Visricso 5 30 46 Vv Emitter-base breakdown voltage (-lep = 100 pA) Viarjesbo 5 5 5 Vv 1603 C-02 173 he hes ay tte Bb eae= MESIEG 25C D Mm 523505 0004128 5 T-29-)7 STEMENS AKTIENGESELLSCHAF 04128 0D BC 201 BC 202 BC 203 Dynamic characteristics (Tamp = 25C) | BC 201 | BC 202 | BC 203 | Transition frequency (-fg = 10 mA: ~Ve_ = 0.5 V) fr 80 80 80 MHz Collector-base capacitance (-Vego = 2V; f = 1 MHz) Ccgo 5.4 (<1) | - ~ pF Collector-base capacitance (-Vogo = 10 V; f = 1 MHz) Coro - 3.6 (<7) | 3.5 (<7) | pF Noise figure (~J = 200 pA; Veg = 0.5 V; f = 1 kHz; , Af = 200 Hz; Ay = 2 kQ) NF 2.5 (<10)| 2.5 (<10)} 2.5 (<10)| dB Current-gain groups Transistors BC 201, BC 202, BC 203 are grouped according to their small signal current gain hf,, and are marked with a color line on the case. Operating point: -Vog = 0.5 Vi Ig = 250 pA Color white yellow green blue Type BC 201 BC 201 BC 201 BC 201 . BC 202 BC 202 BC 202 BC 202 BC 203 BC 203 BC 203 - ht, group 75 to 160 125 to 260 240 to 500 450 to 900 174 @ 1604 c-03 ' I- 25C D MM 8235605 coo4129 ?MESIEG | T- G~/7 79U Utley . SIEMENS AKTIENGESELLSCHAF ~ BC 201 BC 202 BC 203 Totat perm. power dissipation versus taemparature Prot = f (Tamu)? Thermal resistance parameter = lead length "L KA { (lead langth L) W BC 201, BC 202, BC 203 W BC 201, BC 202, BC. 203 1000 800 Any 600 400 The characteristic appies ] mt) toinfinitely good heat = __| dissipation from the soldering joint at the collector terminal 0 {ff tC 0 50 100 180 C 0 2 & 6 8 0 mm >Tamb > Lead length "L* Collector current Jo = f (Vae) Input characteristic Jy = f (Vac Vee = 5 V; Tab = parameter Veg = 5 V; Temp = 25C) mA BC 201, BC 202, BC 203 BA BC 201, BC 202, BC 203 sit ft wl 5 Average values 1b . seaneting tint atTamb= 6 w w 05 > Vge 1,0V ee - 475 1605 C~04 wan aWespehoribe 8 = toh me alk ae yahoo-lh 25C D MM 8235605 0004130 3 MMSIEG - 7-29-47 . mare 7.04130 D Z SIEMENS AKTIENGESELLSCHAF ~~ ~~ ~ Be aoe BC 203 Output characteristics Ig =f {Vog) Output characteristics Jc =f Vcc} 4g = parameter gg = parameter aA BC 201, BC 202, BC 203 mA BC 201. BC 202, BC 203 mA hy 40 t 40 30 a0 20 20 10 10 1 0 20 a0V a Noe " VE DC current gain hige = f (Jc) ~Vee = 2 V (characteristics based on Output characteristics I = f (Veg) average values) Vee = parameter BC 201 yellow, BC 202 yellow, BC 203 yellow mA BC 201, 8C 202, BC 203 5 660 mV I LU einet samen tee + pe ie 9A A LA Wey Waban ah epoca hs gb aa Riedell"25C D MM 6235605 COO4L3L mESTEG. Fer O4131L U . STEMENS AKTIENGESELLSCHAF Output characteristics ic = f (Voce) Ig = parameter A BC 201, BC 202, BC 203 {9 hy 80 60 ri) 20 Co. oVee Collector-emitter saturation voltage Veeeat = f (lc) fe = 20; Temp = Parameter mA BC201, BC 202, BC 203 1? 5 250 nh wi 5 wv 5 m 0 3 2 Of Of6 Nee cat 1607 c-06 -24-)97 BC 201 BC 202 ~~ BC 203 Output characteristics ic = f (Vee) Jg = parameter mA BC 201, BC 202, BC 203 BA NE Base-emitter saturation voltage Vacsat =f (ich Pee = 20; Tamp = Parameter mA BC201, BC 202, BC203 we 5 hy ls 5 sh a Og 1py Viesat 177 do weno othe halt ww sae ae ae lly28C D Mm 8235605 O004L92 7 MESIEG !TeelG-/7 290 UtLIC. os BC 201 SIEMENS AKTIENGESELLSCHAF BC 202 BC 203 , Collector cutoff current versus temperature Transftton frequency fr = f (fg); Togo = f (Tamn) Temp = 25C; Vee = parameter nA BC 201, BC 202, BC 203 MHz BC 201, BC 202, BC 203 10 108 hea ft A 10 10 5 oomeoms Average valies vane ame Scattering bint 0 ~1 0 4 0 50 100 150C 10 10 5 10 107mA > Tab I Collector-base capacitance Coro = f(Vego} Emitter-base capacitance Cego=flVego) Noise figure NF =f (J,) f= 1MHz; Tap = 25C Vog = 6 Vif =1KHz; Temp = 25C pF BC 201, BC 202, BC 203 aB BC 201, BC 202, BC 203 af} 20 e NF { A 6 10 10 5 5 0 to" 5 10 5 10'V 1 to? to? 0? TWA ~ Vega, ego ; 1608 c-07 Se TET aT = oa oe =esc ) mM azashos (0004133 9 maSIEG 5 SIEMENS AKTIENGESELLSCHAF BC 202 Noise figura NF =f (f) Rg = 2k; -Vog = 5 Vi ~/g = 0.2 mA; Tomb = 25C dB BC 201, BC 202, BC 203 20 Ss= % -? 5 wot 5 107 kHz f BC 203 Noise figure NF =f (Voce) Ig = 0.2 MA; Ry = 2k; f= TkHz; Tamb = 26C dB BC 201, BC 202, BC 203 20 rs 17 5 10 5 10" 5 107Y Vee 179 T+ 29 ~ _/7 UtLID . BC 201 Bas Aha