CLA4604-219 - Skyworks Solutions, Inc.

Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com

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DATA SHEET

CLA Series: Silicon Limiter Diodes, Packaged and Bondable

Chips

Applications

• Limiters

Features

• Established Skyworks limiter diode process

• High power, mid-range, and cleanup designs

• Low insertion loss: 0.1 dB @ 10 GHz

• Power handling to +66 dBm

• Tight control of I layer base width

• Mesa and planar chip designs

Description

Skyworks CLA series of silicon limiter diodes provides passive

receiver protection over a wide range of frequencies from

100 MHz to over 30 GHz. These devices use Skyworks well-

established silicon technology resulting in high resistivity and

tightly controlled base width PIN limiter diodes. Limiter circuits

using these devices perform with strong limiting action and low

loss.

The CLA series consists of nine individual chip designs of different

intrinsic region base widths and capacitances designed to

accommodate multi-stage limiter applications. The mesa-

constructed, thin base width, low capacitance CLA4601-000,

CLA4602-000, CLA4604-000, and CLA4605-000 are designed for

low-level and cleanup applications. The CLA4603-000 and

CLA4606-000 through CLA4608-000 are planar designs

designated for high-power and mid-range applications.

The CLA4609-000 thick base width mesa diode is designed for

coarse limiter-stage applications.

The absolute maximum ratings of the CLA diode series are

provided in Table 1. Electrical specifications are specified in

Table 2. Typical performance characteristics are provided in

Table 3 and Figures 1 through 5. Table 4 identifies the die part

numbers with their corresponding top contact diameters and die

outline drawings. Table 5 identifies the hermetic part numbers

together with their thermal resistance specifications and hermetic

outline drawings.

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Table 1. CLA Series Absolute Maximum Ratings

Parameter Symbol Minimum Typical Maximum Units

Power dissipation PDIS

casetojunction

cetansisReThermal

TempCaseTMaximum

−−

−

Reverse voltage VR Minimum rated breakdown voltage V

Forward current IF 200 mA

Junction temperature TJ –65 +175 °C

Storage temperature TSTG –65 +200 °C

Electrostatic Discharge:

Charged Device Model (CDM), Class 4

Human Body Model (HBM), Class 1C

Machine Model (MM), Class A

1000

150

Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other

parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device.

CAUTION: Although this device is designed to be as robust as possible, Electrostatic Discharge (ESD) can damage this device. This device

must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body

or equipment, which can discharge without detection. Industry-standard ESD precautions should be used at all times.

Table 2. CLA Series Electrical Specifications (Note 1)

(TOP = +25 °C, CJ Measured at 1 MHz, RS Measured at 500 MHz, CW Thermal Resistance for Infinite Heat Sink, Pulse Thermal Resistance

for Single 1 μs Pulse, Unless Otherwise Noted)

Part Number

Breakdown

Voltage (V)

I Region

(μm)

Junction

Capacitance

(CJ) @ 0 V

(pF)

Junction

Capacitance

(CJ) @ 6 V

(pF)

Series

Resistance (RS)

@ 10 mA

(Ω)

Minority

Carrier

Lifetime (TL)

@ 10 mA

(ns)

Thermal Impedance (θ)

Average

(

C/W)

1 μs Pulse

(

C/W)

Min – Max Nominal Typical Maximum Maximum Typical Maximum Typical

CLA4601-000 15 – 30 1 0.12 0.10 2.5 5 120 15

CLA4602-000 15 – 30 1 0.20 0.15 2.0 5 80 10

CLA4603-000 20 – 45 1.5 0.20 0.15 2.0 5 100 10

CLA4604-000 30 – 60 2.0 0.12 0.10 2.5 7 100 10

CLA4605-000 30 – 60 2.0 0.20 0.15 2.0 7 70 7.0

CLA4606-000 45 – 75 2.5 0.20 0.15 2.0 10 80 7.0

CLA4607-000 120 – 180 7.0 0.20 0.15 @ 50 V 2.0 50 40 1.2

CLA4608-000 120 – 180 7.0 0.80 0.50 @ 50 V 1.2 100 15 0.3

CLA4609-000 250 (Min.) 20 0.26 0.14 1.5 1175 15 0.3

Note 1: Performance is guaranteed only under the conditions listed in this Table and is not guaranteed over the full operating or storage temperature ranges. Operation at elevated

temperatures may reduce reliability of the device.

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Table 3. Typical Performance @ 25 °C

Part Number

Insertion Loss

@ –10 dBm

(dB)

Input Power for

1 dB Loss

(dBm)

Maximum Pulsed

Input Power

(dBm)

Output @ Maximum

Pulsed Input

(dBm)

Maximum CW

Input power

(W)

Recovery Time

(ns)

CLA4601-000 0.1 7 47 21 2 5

CLA4602-000 0.1 7 50 24 3 5

CLA4603-000 0.1 10 50 22 2 10

CLA4604-000 0.1 12 47 24 3 10

CLA4605-000 0.1 12 50 27 4 10

CLA4606-000 0.1 15 53 27 3 20

CLA4607-000 0.1 20 60 39 6 50

CLA4608-000 0.2 20 66 44 15 100

CLA4609-000 0.3 38 70 50 20 1000

Notes:

Insertion loss for CLA4601-000 through CLA4607-000 @ 10 GHz. Insertion loss for CLA4608-000 @ 5 GHz. Insertion loss for CLA4609-000 @ 2.1 GHz.

Limiter power results @ 1 GHz for shunt connected, single limiter diode and DC return in 50 Ω line.

Maximum pulsed power for 1 μs pulse and 0.1% duty factor with chip @ 25 °C heat sink. Derate linearly to 0 W @ 175 °C.

Maximum CW input power @ 25 °C heat sink. Derate linearly to 0 W @ 175 °C.

Recovery time to insertion loss from limiting state.

Table 4. CLA Series Parts – Die Packages

Part Number Typical Top Contact Diameter (mils/mm) Die Drawing

CLA4601-000 1.10/0.028 150-806

CLA4602-000 1.25/0.032 150-806

CLA4603-000 2.00/0.051 149-815

CLA4604-000 1.65/0.042 150-806

CLA4605-000 2.05/0.052 150-813

CLA4606-000 2.25/0.057 149-815

CLA4607-000 3.50/0.089 149-815

CLA4608-000 7.50/0.190 149-815

CLA4609-000 6.50/0.165 150-813

Table 5. Hermetic Packages

Hermetic Stripline

Drawing

Typical θJC

(°C/W)

Hermetic Pill

Drawing

Typical θJC

(°C/W)

Hermetic Pill

Drawing

Typical θJC

(°C/W)

Hermetic Pill

Drawing

Typical θJC

(°C/W)

CLA4601-240 200 CLA4601-203 150 CLA4601-219 200 CLA4601-210 140

CLA4602-240 160 CLA4602-203 110 CLA4602-219 160 CLA4602-210 100

CLA4603-240 180 CLA4603-203 130 CLA4603-219 180 CLA4603-210 120

CLA4604-240 160 CLA4604-203 130 CLA4604-219 180 CLA4604-210 120

CLA4605-240 150 CLA4605-203 100 CLA4605-219 150 CLA4605-210 90

CLA4606-240 160 CLA4606-203 110 CLA4606-219 160 CLA4606-210 100

CLA4607-240 120 CLA4607-203 70 CLA4607-219 120 CLA4607-210 60

CLA4608-240 100 CLA4608-203 45 CLA4608-219 100 CLA4608-210 35

CLA4609-240 100 CLA4609-203 45 CLA4609-219 100 CLA4609-210 35

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Typical Performance Characteristics at 25 °C

Figure 1. Typical Peak Leakage Power @ 1 GHz

Figure 3. Typical Diode Insertion Loss vs Frequency

Figure 2. Normalized Pulsed Thermal Impedance

Figure 4. Typical Peak Leakage Power @ 1 GHz

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Figure 5. Power Handling Capability vs Temperature

Technical Description

The CLA4603 and CLA4606 limiter diodes are constructed in a

passivated flat-chip configuration and are available in a basic chip

form or encapsulated in several Skyworks hermetic ceramic

packages.

Limiter diodes with lower capacitance values to 0.08 pF and

constructed with a passivated mesa configuration are available in

the CLA4601 and CLA4605 series. The mesa devices offer low

capacitance and, therefore, broader bandwidth, lower loss, and

faster response at reduced power. These diodes are also available

in chip package form and represent the ultimate in limiter

performance not approached by other manufacturers.

The CLA4607 diodes (highest power) are available in both planar

and mesa construction.

Figures 6 and 7 illustrate the fundamental structures of diodes

mounted in a 50 Ω microstrip circuit.

Additional bonding and handling methods are contained in the

Skyworks Application Notes, Waffle Pack Chip Carrier

Handling/Opening Procedure (document #200146) and Diode

Chips, Beam-Lead Diodes, Capacitors: Bonding Methods and

Packaging (document #200146).

Basic Applications

In microstrip limiters, the bonding wire length and diameter

together with the chip capacitance, form a low-pass filter (see

Figure 8). Line lengths (X1 and X2) are varied to provide

broadband matching and flat leakage characteristics. Typically, X1

and X2 are on the order of 0.1 wavelength. In Figure 9, the

CLA4607 chip provides about 20 dB attenuation, reducing a 1 kW

input signal to a 10 W output signal. The CLA4606 reduces this to

100 mW and the CLA4603 to about 20 mW.

During the rise time of the incident pulse, the diodes behave in the

following manner. The CLA4603, due to its thin I region, is the first

to change to a low impedance. Experiments indicate that the

CLA4603 reaches the 10 dB isolation point in about 1 ns and

20 dB in 1.5 ns with an incident power of 10 W.

The CLA4606 takes about 4 ns and the CLA4607 about 50 ns to

achieve 10 dB isolation. Consequently, the CLA4603 provides

protection during the initial stages of pulse rise time with the

thicker diodes progressively “turning on” as the power increases.

With proper spacing (X1 and X2), the “on” diodes reflect high

impedances to the upstream diodes, reducing the turn-on time for

those diodes and ensuring that essentially all of the incident

power is reflected by the input diode, preventing burnout of the

thinner diodes.

At the end of the pulse the process reverses and the diodes

“recover” to their high impedance states; the free charge that was

injected into their I regions by the high-incident power signal leaks

off through the ground return and is also reduced by internal

recombination. With a ground return, recovery time is on the order

of 50 ns. With a high impedance return (for example, the circuit

shown in Figure 10), the Schottky diode (such as the CDF7621-000)

recovers or “opens” in practically zero time. Internal recombination

on the order of several diode lifetimes is the only available

mechanism for recovery of the limiter diodes. This recovery time can

be long – on the order of 1 ms for the CLA4607 series. The shunt

resistor (RR) minimizes the problem. One hundred Ohms

approximately doubles the recovery time compared to a short circuit.

When the Schottky diode is directly coupled to the transmission

line in cascade after the coarse limiter, the leakage power is less

than if a 0 Ω ground return were used. If the Schottky is

decoupled too much, the leakage power increases due to the high

DC impedance of a Schottky. Similarly, a 3 Ω ground return

causes an increase of about 3 dB in leakage power compared to a

0 Ω return.

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Figure 6. Diodes in 50 Ω Microstrip Circuit (Side View)

Figure 7. Diodes in 50 Ω Microstrip Circuit (Top View)

Figure 8. Low-Level Equivalent Circuit

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Figure 9. Cascaded Limiter Design

Figure 10. Quasi-Active Limiter Design

Figure 11. High-Power Equivalent Circuit

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Package Outline Drawings

Package outline die drawings for the CLA diode series are shown

in Figures 12, 13, and 14. Hermetic package outlines are shown

in Figures 15 through 18.

Die Packages

Figure 12. 149-815 Package

Figure 13. 150 Series Package

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Die Packages (Continued)

Figure 14. 150-813 Package

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Hermetic Packages

Figure 15. -203 Package

Figure 16. -210 Package

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Hermetic Packages (Continued)

Figure 17. -219 Package

Figure 18. -240 Package

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