BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features * High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc. * Collector Emitter Sustaining Voltage @ 30 mAdc: * * * * VCEO(sus) = 80 Vdc (min) - BDW46 100 Vdc (min) - BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc Monolithic Construction with Built-In Base Emitter Shunt resistors TO-220AB Compact Package These are Pb-Free Packages* http://onsemi.com 15 AMP DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLT, 85 WATT MARKING DIAGRAM 4 TO-220AB CASE 221A-09 STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage BDW46 BDW42, BDW47 Collector-Base Voltage BDW46 BDW42, BDW47 Emitter-Base Voltage Symbol VCEO VCB Value Unit Vdc 80 100 Vdc 80 100 1 2 BDWxx AYWWG 3 BDWxx = Device Code x = 42, 46, or 47 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package VEB 5.0 Vdc Collector Current IC 15 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 85 0.68 W W/C Device Package Shipping TJ, Tstg -55 to +150 C BDW42G TO-220AB (Pb-Free) 50 Units/Rail BDW46G Max Unit TO-220AB (Pb-Free) 50 Units/Rail Symbol RqJC 1.47 C/W BDW47G TO-220AB (Pb-Free) 50 Units/Rail Operating and Storage Junction Temperature Range ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 15 Publication Order Number: BDW42/D BDW42G - NPN, BDW46G, BDW47G - PNP IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 80 100 - - - - 2.0 2.0 - - 1.0 1.0 - 2.0 1000 250 - - - - 2.0 3.0 - 3.0 Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) BDW46 BDW42/BDW47 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) BDW46 BDW42/BDW47 Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) BDW46 BDW42/BDW47 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) VCEO(sus) ICEO ICBO IEBO Vdc mAdc mAdc mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 10 mAdc) (IC = 10 Adc, IB = 50 mAdc) VCE(sat) Base-Emitter On Voltage (IC = 10 Adc, VCE = 4.0 Vdc) VBE(on) Vdc Vdc SECOND BREAKDOWN (Note 2) Second Breakdown Collector Current with Base Forward Biased BDW42 IS/b VCE = 28.4 Vdc VCE = 40 Vdc VCE = 22.5 Vdc VCE = 36 Vdc BDW46/BDW47 Adc 3.0 1.2 3.8 1.2 - - - - 4.0 - - - 200 300 300 - DYNAMIC CHARACTERISTICS Magnitude of common emitter small signal short circuit current transfer ratio (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDW42 BDW46/BDW47 Small-Signal Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) fT Cob hfe 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2. Pulse Test non repetitive: Pulse Width = 250 ms. http://onsemi.com 2 MHz pF BDW42G - NPN, BDW46G, BDW47G - PNP PD, POWER DISSIPATION (WATTS) 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 1. Power Temperature Derating Curve 5.0 2.0 RC SCOPE APPROX + 8.0 V 0 51 V1 D1 [ 8.0 k [ 150 25 ms 0.7 0.5 0.3 0.2 for td and tr, D1 id disconnected and V2 = 0 For NPN test circuit reverse all polarities - 12 V tr, tf v 10 ns DUTY CYCLE = 1.0% tf 1.0 + 4.0 V APPROX ts 3.0 t, TIME (s) RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA TUT RB V2 VCC - 30 V 0.1 0.07 0.05 0.1 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 3. Switching Times Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 td @ VBE(off) = 0 V 0.2 0.1 0.1 0.07 0.05 P(pk) 0.05 RqJC(t) = r(t) RqJC RqJC = 1.92C/W 0.02 t1 0.03 0.02 0.01 0.01 0.01 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response http://onsemi.com 3 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 50 100 200 300 500 1000 BDW42G - NPN, BDW46G, BDW47G - PNP ACTIVE-REGION SAFE OPERATING AREA 50 0.1 ms 20 10 TJ = 25C 1.0 ms 5.0 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25C (SINGLE PULSE) 2.0 1.0 0.5 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 50 0.5 ms dc 0.2 0.1 0.05 1.0 0.1 ms 20 10 TJ = 25C SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25C (SINGLE PULSE) 2.0 1.0 0.5 BDW42 20 30 2.0 3.0 5.0 7.0 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. BDW46 and BDW47 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 and 6 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. *Linear extrapolation 10,000 300 TJ = + 25C 5000 3000 2000 200 C, CAPACITANCE (pF) hFE, SMALL-SIGNAL CURRENT GAIN dc BDW46 BDW47 0.05 1.0 20 30 2.0 3.0 5.0 7.0 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.5 ms 0.2 0.1 Figure 5. BDW42 1000 500 300 200 100 TJ = 25C VCE = 3.0 V IC = 3.0 A 50 30 20 BDW46, 47 (PNP) BDW42 (NPN) 10 1.0 1.0 ms 5.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) Cob 100 Cib 70 50 200 30 0.1 500 1000 Figure 7. Small-Signal Current Gain BDW46, 47 (PNP) BDW42 (NPN) 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance http://onsemi.com 4 50 100 BDW42G - NPN, BDW46G, BDW47G - PNP BDW42 (NPN) BDW46, 47 (PNP) 20,000 20,000 VCE = 3.0 V VCE = 3.0 V 10,000 5000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 TJ = 150C 3000 2000 25C 1000 -55C 500 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7000 5000 TJ = 150C 3000 25C 2000 1000 700 500 -55C 300 200 0.1 5.0 7.0 10 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 3.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 1.0 20 30 Figure 10. Collector Saturation Region 3.0 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25C 2.0 VBE(sat) @ IC/IB = 250 1.5 2.5 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.5 5.0 7.0 10 VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 11. "On" Voltages http://onsemi.com 5 5.0 7.0 10 BDW42G - NPN, BDW46G, BDW47G - PNP BDW46, 47 (PNP) +5.0 +4.0 V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENT (mV/ C) BDW42 (NPN) *IC/IB v 250 +3.0 25C to 150C +2.0 +1.0 -55C to 25C 0 -1.0 *qVC for VCE(sat) -2.0 25C to 150C -3.0 qVB for VBE -55C to 25C -4.0 -5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 +5.0 +4.0 + 25C to 150C +2.0 +1.0 0 -1.0 *qVC for VCE(sat) -2.0 -55C to + 25C qVB for VBE + 25C to 150C -3.0 -55C to +25C -4.0 -5.0 7.0 10 *IC/IB v 250 +3.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 12. Temperature Coefficients 104 105 FORWARD REVERSE IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 105 VCE = 30 V 103 102 101 TJ = 150C 100C 100 25C 10-1 +0.6 +0.4 +0.2 0 REVERSE 104 FORWARD VCE = 30 V 103 102 TJ = 150C 101 100 100C 25C 10-1 -0.6 -0.4 -0.2 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 13. Collector Cut-Off Region NPN BDW42 COLLECTOR PNP BDW46 BDW47 BASE COLLECTOR BASE [ 8.0 k [ 60 [ 8.0 k EMITTER [ 60 EMITTER Figure 14. Darlington Schematic http://onsemi.com 6 BDW42G - NPN, BDW46G, BDW47G - PNP PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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