BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI V DSS R DS( on) ID 50 V 50 V < 0.1 < 0.1 18 A 12 A TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 2 1 TO-220 2 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BUZ71 VD S V DG R V GS ID Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage o Unit BUZ71FI 50 V 50 V 20 V Drain Current (continuous) at T c = 25 C 18 12 A I DM Drain Current (pulsed) 72 72 A P tot Total Dissipation at Tc = 25 o C 80 35 W V ISO Insulation Withstand Voltage (DC) 2000 T stg Tj Storage Temperature Max. Operating Junction Temperature DIN Humidity Category (DIN 40040) IEC Climatic Category (DIN IEC 68-1) May 1993 V -65 to 175 o C 175 o C E 55/150/56 1/8 BUZ71/FI THERMAL DATA R thj-cas e Thermal Resistance Junction-case Max Rthj- amb Thermal Resistance Junction-ambient Max TO-220 ISOWATT220 1.88 4.29 62.5 o C/W o C/W AVALANCHE CHARACTERISTICS Symbol Parameter Value Unit IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) 18 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) 60 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) 15 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) 12 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 I DS S V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 50 Unit V Tj = 125 oC V GS = 20 V 250 1000 A A 100 nA ON () Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS R DS( on) Static Drain-source On Resistance ID = 1 mA V GS = 10 V Min. Typ. Max. Unit 2.1 3 4 V 0.06 0.1 Min. Typ. Max. Unit 5 8 ID = 9 A DYNAMIC Symbol gfs () C iss C oss C rss Parameter Test Conditions Forward Transconductance V DS = 25 V ID = 9 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VG S = 0 S 520 250 80 700 350 120 pF pF pF Typ. Max. Unit 45 65 115 80 65 95 160 120 ns ns ns ns SWITCHING Symbol t d(on) tr t d(off ) tf 2/8 Parameter Turn-on Time Rise Time Turn-off Delay Time Fall Time Test Conditions V DD = 30 V R GS = 50 ID = 3 A V GS = 10 V Min. BUZ71/FI ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SD M Source-drain Current Source-drain Current (pulsed) V S D () Forward On Voltage I SD = 36 A Reverse Recovery Time Reverse Recovery Charge I SD = 18 A di/dt = 100 A/s V DD = 15 V T j = 150 o C t rr Q rr Min. Typ. VG S = 0 Max. Unit 18 72 A A 2 V 85 ns 0.13 C () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area For TO-220 Package Safe Operating Area For ISOWATT220 Package Thermal Impedance For TO-220 Package Thermal Impedance For ISOWATT220 Package 3/8 BUZ71/FI Derating Curve For TO-220 Package Derating Curve For ISOWATT220 Package Output Characteristics Transfer Characteristics Transconductance Static Drain-Source On Resistance 4/8 BUZ71/FI Maximum Drain Current vs Temperature Gate Charge vs Gate-Source Voltage Capacitance Variation Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-Drain Diode Forward Characteristics 5/8 BUZ71/FI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 6/8 BUZ71/FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 O 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 O 1 2 3 L2 L4 P011G 7/8 BUZ71/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 8/8 IRF540 IRF540FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF540 IRF540FI V DSS R DS( on) ID 100 V 100 V < 0.077 < 0.077 30 A 16 A TYPICAL RDS(on) = 0.045 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 1 3 2 TO-220 1 2 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF540 VD S V DG R V GS Unit IRF540FI Drain-source Voltage (V GS = 0) 100 V Drain- gate Voltage (R GS = 20 k) 100 V Gate-source Voltage 20 V o ID Drain Current (cont.) at Tc = 25 C 30 16 A ID Drain Current (cont.) at Tc = 100 oC 21 11 A Drain Current (pulsed) 120 120 A ID M(*) P tot o 150 45 W Derating Factor 1 0.3 W/ o C V ISO Insulation Withstand Voltage (DC) T stg Storage Temperature Tj Total Dissipation at Tc = 25 C Max. Operating Junction Temperature 2000 V -65 to 175 o C 175 o C (*) Pulse width limited by safe operating area July 1993 1/9 IRF540/FI THERMAL DATA R thj-cas e Rthj- amb R th c-s Tl Thermal Resistance Junction-case TO-220 ISOWATT220 1 3.33 Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W 62.5 0.5 300 o C/W C/W o C Max Value Unit o AVALANCHE CHARACTERISTICS Symbol Parameter IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) 30 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) 200 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) 50 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) 21 A o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 100 Unit V T c = 125 oC V GS = 20 V 250 1000 A A 100 nA ON () Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 250 A R DS( on) Static Drain-source On Resistance V GS = 10V ID = 17 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max VG S = 10 V Min. Typ. Max. Unit 2 2.9 4 V 0.045 0.077 30 A DYNAMIC Symbol gfs () C iss C oss C rss 2/9 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 17 A VG S = 0 Min. Typ. 10 18 1600 460 140 Max. Unit S 2100 600 200 pF pF pF IRF540/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol Typ. Max. Unit t d(on) tr t d(off ) tf Turn-on Time Rise Time Turn-off Delay Time Fall Time Parameter V DD = 50 V ID = 5 A VG S = 10 V R i = 50 (see test circuit) Test Conditions Min. 55 110 290 125 80 160 410 180 ns ns ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge I D = 30 A V GS = 10 V V DD = Max Rating x 0.8 (see test circuit) 55 11 26 80 nC nC nC Typ. Max. Unit 30 120 A A 1.6 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(*) Source-drain Current Source-drain Current (pulsed) V S D () Forward On Voltage I SD = 30 A Reverse Recovery Time Reverse Recovery Charge I SD = 30 A di/dt = 100 A/s T j = 150 o C VDD = 50 V t rr Q rr Min. VG S = 0 140 ns 0.7 C () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area for TO-220 Package Safe Operating Area for ISOWATT220 Package 3/9 IRF540/FI Thermal Impedance for TO-220 Package Thermal Impedance for ISOWATT220 Package Derating Curve for TO-220 Package Derating Curve for ISOWATT220 Package Output Characteristics Transfer Characteristics 4/9 IRF540/FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/9 IRF540/FI Source-drain Diode Forward Characteristics Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms Switching Time Test Circuit Gate Charge Test Circuit 6/9 IRF540/FI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/9 IRF540/FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 O 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 O 1 2 3 L2 8/9 L4 P011G IRF540/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9 IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS R DS( on) ID IRF840 IRF840FI TYPE 500 V 500 V < 0.85 < 0.85 8A 4.5 A IRF841 IRF841FI 450 V 450 V < 0.85 < 0.85 8A 4.5 A TYPICAL RDS(on) = 0.74 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT 3 1 3 2 1 TO-220 2 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF 840 841 840FI 841FI Drain-source Voltage (V GS = 0) 500 450 500 450 V D GR Drain- gate Voltage (R GS = 20 k) 500 450 500 450 V GS Gate-source Voltage V DS 20 V V V ID Drain Current (cont.) at T c = 25 o C 8 8 4.5 4.5 A ID Drain Current (cont.) at T c = 100 o C 5.1 5.1 2.8 2.8 A Drain Current (pulsed) 32 32 32 32 A I DM(*) P tot o 125 40 W Derating Factor 1 0.32 W/ o C V ISO Insulation Withstand Voltage (DC) 2000 T st g Storage Temperature Tj Total Dissipation at Tc = 25 C Max. Operating Junction Temperature -65 to 150 o C 150 o C (*) Pulse width limited by safe operating area May 1993 1/10 IRF840/FI - IRF841/FI THERMAL DATA R thj-cas e Rthj- amb R th c-s Tl Thermal Resistance Junction-case TO-220 ISOWATT220 1 3.12 Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W 62.5 0.5 300 o C/W C/W o C Max Value Unit 8 A o AVALANCHE CHARACTERISTICS Symbol Parameter IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) 510 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) 13 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) 5.1 A o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 for IRF840/840FI for IRF841/841FI I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 500 450 Unit V V T c = 125 oC V GS = 20 V 250 1000 A A 100 nA ON () Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 250 A R DS( on) Static Drain-source On Resistance V GS = 10V ID = 4.4 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max VG S = 10 V Min. Typ. Max. Unit 2 3 4 V 0.74 0.85 8 A DYNAMIC Symbol gfs () C iss C oss C rss 2/10 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 4.4 A VG S = 0 Min. Typ. 4.9 6 1100 190 80 Max. Unit S 1500 240 110 pF pF pF IRF840/FI - IRF841/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol Typ. Max. Unit t d(on) tr t d(off ) tf Turn-on Time Rise Time Turn-off Delay Time Fall Time Parameter V DD = 200 V I D = 4 A R i = 4.7 (see test circuit) Test Conditions Min. 40 35 80 20 50 43 100 25 ns ns ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge I D = 8 A V GS = 10 V V DD = Max Rating x 0.8 (see test circuit) 75 9 39 95 nC nC nC Typ. Max. Unit 8 32 A A 2 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(*) Source-drain Current Source-drain Current (pulsed) V S D () Forward On Voltage I SD = 8 A Reverse Recovery Time Reverse Recovery Charge I SD = 8 A di/dt = 100 A/s V DD = 100 V T j = 150 o C t rr Q rr Min. V GS = 0 700 ns 12 C () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220 3/10 IRF840/FI - IRF841/FI Thermal Impedance for TO-220 Thermal Impedance for ISOWATT220 Derating Curve for TO-220 Derating Curve for ISOWATT220 Output Characteristics Output Characteristics 4/10 IRF840/FI - IRF841/FI Transfer Characteristics Transconductance Static Drain-source On Resistance Maximum Drain Current vs Temperature Gate Charge vs Gate-source Voltage Capacitance Variations 5/10 IRF840/FI - IRF841/FI Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Unclamped Inductive Load Test Circuit 6/10 Unclamped Inductive Waveforms IRF840/FI - IRF841/FI Switching Time Test Circuit Gate Charge Test Circuit 7/10 IRF840/FI - IRF841/FI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 8/10 IRF840/FI - IRF841/FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 O 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 O 1 2 3 L2 L4 P011G 9/10 IRF840/FI - IRF841/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 10/10 STE150N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS( on) ID STE150N10 100 V < 0.009 150 A 4 HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) 3 1 2 ISOTOP INTERNAL SCHEMATIC DIAGRAM INDUSTRIAL APPLICATIONS: SMPS & UPS MOTOR CONTROL WELDING EQUIPMENT OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS Parameter Value Unit Drain-Source Voltage (V GS = 0) 100 V Drain-Gate Voltage (RGS = 20 k) 100 V 20 V 150 A Gate-Source Voltage o ID Drain Current (continuous) at T c = 25 C ID o ID M(*) P tot T stg Tj V ISO Drain Current (continuous) at T c = 100 C 100 A Drain Current (pulsed) 450 A Total Dissipation at Tc = 25 o C 410 W Derating Factor 3.3 W/o C -55 to 150 o C Max. Operating Junction Temperature 150 o C Insulation Withstand Voltage (AC-RMS) 2500 Storage Temperature V (*) Pulse width limited by safe operating area July 1993 1/8 STE150N10 THERMAL DATA R thj-cas e R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.3 o C/W Max 0.05 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 1 mA V GS = 0 V I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 100 Unit V T c = 125 oC V GS = 20 V 300 1.5 A mA 300 nA Max. Unit 4 V 0.009 Max. Unit ON () Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 1 mA R DS( on) Static Drain-source On Resistance ID = 90 A V GS = 10V Min. Typ. 2 DYNAMIC Symbol gfs () C iss C oss C rss Parameter Test Conditions Forward Transconductance V DS = 15 V I D = 90 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz Min. Typ. 85 S VG S = 0 V 13.5 3600 900 nF pF pF Max. Unit SWITCHING ON Symbol t d(on) tr (di/dt) on Qg 2/8 Parameter Test Conditions Min. Typ. Turn-on Time Rise Time V DD = 50 V ID = 75 A V GS = 10 V R G = 4.7 (see test circuit, figure 1) 80 140 ns ns Turn-on Current Slope V DD = 80 V ID = 150 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) 700 A/s Total Gate Charge V DD = 80 V V GS = 10 V 320 nC ID = 150 A STE150N10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. Typ. Max. 90 340 400 V DD = 80 V ID = 150 A V GS = 10 V R G = 4.7 (see test circuit, figure 3) Unit ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(*) Source-drain Current Source-drain Current (pulsed) V S D () Forward On Voltage I SD = 150 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 150 A di/dt = 100 A/s V DD = 50 V T j = 150 o C (see test circuit, figure 3) t rr Q rr I RRM Min. Typ. V GS = 0 Max. Unit 150 450 A A 1.6 V 230 ns 1750 C 15 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STE150N10 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/8 STE150N10 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope 5/8 STE150N10 Cross-over Time Source-drain Diode Forward Characteristics Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge Test Circuit Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STE150N10 ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 P 5.5 0.157 0.157 8.2 0.307 0.322 0.216 A G B O F E H D N J C K L M 0041565 7/8 STE150N10 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 8/8 STE15N100 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE15N100 V DSS R DS( on) ID 1000 V < 0.77 15 A 4 HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH6N100 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) 3 1 2 ISOTOP INTERNAL SCHEMATIC DIAGRAM INDUSTRIAL APPLICATIONS: SMPS & UPS MOTOR CONTROL WELDING EQUIPMENT OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS Parameter Value Unit Drain-Source Voltage (V GS = 0) 1000 V Drain-Gate Voltage (RGS = 20 k) 1000 V 20 V A Gate-Source Voltage o ID Drain Current (continuous) at T c = 25 C 15 ID o ID M(*) P tot T stg Tj V ISO Drain Current (continuous) at T c = 100 C 9.5 A Drain Current (pulsed) 60 A Total Dissipation at Tc = 25 o C 400 W Derating Factor 3.2 W/o C -55 to 150 o C Max. Operating Junction Temperature 150 o C Insulation Withstand Voltage (AC-RMS) 2500 Storage Temperature V (*) Pulse width limited by safe operating area July 1993 1/8 STE15N100 THERMAL DATA R thj-cas e R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.31 o C/W Max 0.05 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 1 mA V GS = 0 V I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 1000 Unit V T c = 125 oC V GS = 20 V 500 1.5 A mA 300 nA Max. Unit 4 V 0.77 Max. Unit ON () Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 1 mA R DS( on) Static Drain-source On Resistance ID = 9 A V GS = 10V Min. Typ. 2 DYNAMIC Symbol gfs () C iss C oss C rss Parameter Test Conditions Forward Transconductance V DS = 15 V ID = 9 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz Min. Typ. 8 S VG S = 0 V 7 850 250 nF pF pF Max. Unit SWITCHING ON Symbol t d(on) tr (di/dt) on Qg 2/8 Parameter Test Conditions Min. Typ. Turn-on Time Rise Time V DD = 500 V I D = 9 A V GS = 10 V R G = 4.7 (see test circuit, figure 1) 65 78 ns ns Turn-on Current Slope V DD = 800 V ID = 15 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) 570 A/s Total Gate Charge V DD = 800 V V GS = 10 V 375 nC I D = 15 A STE15N100 ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 800 V I D = 15 A V GS = 10 V R G = 4.7 (see test circuit, figure 3) Typ. Max. Unit 75 18 105 95 25 136 ns ns ns Typ. Max. Unit 15 60 A A 2.5 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(*) Source-drain Current Source-drain Current (pulsed) V S D () Forward On Voltage I SD = 15 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 15 A di/dt = 100 A/s V DD = 100 V T j = 150 o C (see test circuit, figure 3) t rr Q rr I RRM Min. VG S = 0 1150 ns 30 C 52 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STE15N100 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/8 STE15N100 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope 5/8 STE15N100 Cross-over Time Source-drain Diode Forward Characteristics Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge Test Circuit Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STE15N100 ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 P 5.5 0.157 0.157 8.2 0.307 0.322 0.216 A G B O F E H D N J C K L M 0041565 7/8 STE15N100 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 8/8 STE47N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS( on) ID STE47N50 500 V < 0.1 47 A 4 HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) 3 1 2 ISOTOP INTERNAL SCHEMATIC DIAGRAM INDUSTRIAL APPLICATIONS: SMPS & UPS MOTOR CONTROL WELDING EQUIPMENT OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS Parameter Value Unit Drain-Source Voltage (V GS = 0) 500 V Drain-Gate Voltage (RGS = 20 k) 500 V 20 V 47 A Gate-Source Voltage o ID Drain Current (continuous) at T c = 25 C ID o ID M(*) P tot T stg Tj V ISO Drain Current (continuous) at T c = 100 C 30 A Drain Current (pulsed) 188 A Total Dissipation at Tc = 25 o C 450 W Derating Factor 3.6 W/o C -55 to 150 o C Max. Operating Junction Temperature 150 o C Insulation Withstand Voltage (AC-RMS) 2500 Storage Temperature V (*) Pulse width limited by safe operating area July 1993 1/8 STE47N50 THERMAL DATA R thj-cas e R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.27 o C/W Max 0.05 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 1 mA V GS = 0 V I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 500 Unit V T c = 125 oC V GS = 20 V 400 2 A mA 400 nA Max. Unit 4 V 0.1 Max. Unit ON () Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 1 mA R DS( on) Static Drain-source On Resistance ID = 28 A V GS = 10V Min. Typ. 2 DYNAMIC Symbol gfs () C iss C oss C rss Parameter Test Conditions Forward Transconductance V DS = 15 V I D = 28 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz Min. Typ. 28 S VG S = 0 V 12 2400 1000 nF pF pF Max. Unit SWITCHING ON Symbol t d(on) tr (di/dt) on Qg 2/8 Parameter Test Conditions Min. Typ. Turn-on Time Rise Time V DD = 250 V I D = 28 A V GS = 10 V R G = 4.7 (see test circuit, figure 1) 90 130 ns ns Turn-on Current Slope V DD = 400 V ID = 45 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) 550 A/s Total Gate Charge V DD = 400 V V GS = 10 V 550 nC I D = 45 A STE47N50 ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. Typ. Max. 120 55 170 V DD = 400 V I D = 45 A V GS = 10 V R G = 4.7 (see test circuit, figure 3) Unit ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(*) Source-drain Current Source-drain Current (pulsed) V S D () Forward On Voltage I SD = 47 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 47 A di/dt = 100 A/s V DD = 100 V T j = 150 o C (see test circuit, figure 3) t rr Q rr I RRM Min. Typ. VG S = 0 Max. Unit 47 188 A A 1.4 V 1100 ns 40 C 73 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STE47N50 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/8 STE47N50 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope 5/8 STE47N50 Cross-over Time Source-drain Diode Forward Characteristics Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge Test Circuit Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STE47N50 ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 P 5.5 0.157 0.157 8.2 0.307 0.322 0.216 A G B O F E H D N J C K L M 0041565 7/8 STE47N50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 8/8 STE50N40 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS( on) ID STE50N40 400 V < 0.075 50 A 4 HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE IRFP350 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) 3 1 2 ISOTOP INTERNAL SCHEMATIC DIAGRAM INDUSTRIAL APPLICATIONS: SMPS & UPS MOTOR CONTROL WELDING EQUIPMENT OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS Parameter Value Unit Drain-Source Voltage (V GS = 0) 400 V Drain-Gate Voltage (RGS = 20 k) 400 V 20 V 50 A Gate-Source Voltage o ID Drain Current (continuous) at T c = 25 C ID o ID M(*) P tot T stg Tj V ISO Drain Current (continuous) at T c = 100 C 34 A Drain Current (pulsed) 200 A Total Dissipation at Tc = 25 o C 450 W Derating Factor 3.6 W/o C -55 to 150 o C Max. Operating Junction Temperature 150 o C Insulation Withstand Voltage (AC-RMS) 2500 Storage Temperature V (*) Pulse width limited by safe operating area July 1993 1/6 STE50N40 THERMAL DATA R thj-cas e R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.27 o C/W Max 0.05 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 1 mA V GS = 0 V I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 400 Unit V T c = 125 oC V GS = 20 V 400 2 A mA 400 nA Max. Unit 4 V 0.075 Max. Unit ON () Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 1 mA R DS( on) Static Drain-source On Resistance ID = 30 A V GS = 10V Min. Typ. 2 DYNAMIC Symbol gfs () C iss C oss C rss Parameter Test Conditions Forward Transconductance V DS = 15 V I D = 30 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz Min. Typ. 28 S VG S = 0 V 12 2400 1000 nF pF pF Max. Unit SWITCHING ON Symbol t d(on) tr (di/dt) on Qg 2/6 Parameter Test Conditions Min. Typ. Turn-on Time Rise Time V DD = 200 V I D = 30 A V GS = 10 V R G = 4.7 (see test circuit, figure 1) 80 120 ns ns Turn-on Current Slope V DD = 320 V ID = 50 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) 1000 A/s Total Gate Charge V DD = 320 V V GS = 10 V 580 nC I D = 50 A STE50N40 ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. Typ. Max. 90 40 135 V DD = 320 V I D = 50 A V GS = 10 V R G = 4.7 (see test circuit, figure 3) Unit ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(*) Source-drain Current Source-drain Current (pulsed) V S D () Forward On Voltage I SD = 50 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 50 A di/dt = 100 A/s V DD = 100 V T j = 150 o C (see test circuit, figure 3) t rr Q rr I RRM Min. Typ. VG S = 0 Max. Unit 50 200 A A 1.6 V 980 ns 31.8 C 65 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/6 STE50N40 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/6 STE50N40 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope 5/6 STE50N40 Cross-over Time Source-drain Diode Forward Characteristics Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge Test Circuit Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/6 STE50N40 ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 P 5.5 0.157 0.157 8.2 0.307 0.322 0.216 A G B O F E H D N J C K L M 0041565 7/6 STE50N40 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 8/6 STH6N100 STH6N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH6N100 STH6N100FI V DSS R DS( on) ID 1000 V 1000 V < 2 < 2 6A 3.7 A TYPICAL RDS(on) = 1.75 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CONSUMER AND INDUSTRIAL LIGHTING DC-AC INVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLY (UPS) 3 3 2 2 1 1 TO-218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STH6N100 VD S V DG R V GS 1000 V Drain- gate Voltage (R GS = 20 k) 1000 V 20 Gate-source Voltage Drain Current (continuous) at T c = 25 oC ID P tot V ISO T stg Tj STH6N100 Drain-source Voltage (V GS = 0) ID ID M(*) Unit V 6 3.7 A Drain Current (continuous) at T c = 100 oC 3.7 2.3 A Drain Current (pulsed) 24 24 A o Total Dissipation at Tc = 25 C 180 70 W Derating Factor 1.44 0.56 W/o C 4000 Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature V -65 to 150 o C 150 o C (*) Pulse width limited by safe operating area May 1993 1/10 STH6N100/FI THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case TO-218 ISOWATT218 0.69 1.78 Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W 30 0.1 300 o C/W C/W o C Max Value Unit 6 A o AVALANCHE CHARACTERISTICS Symbol Parameter IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) 850 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) 16 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) 3.7 A o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 Min. Typ. Max. 1000 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Unit V T c = 125 oC V GS = 20 V 250 1000 A A 100 nA ON () Symbol Parameter Test Conditions ID = 250 A V G S(th) Gate Threshold Voltage V DS = V GS R DS( on) Static Drain-source On Resistance V GS = 10V ID = 3 A V GS = 10V I D = 3 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. Typ. Max. Unit 2 3 4 V 1.75 2 4 T c = 100 oC 6 A DYNAMIC Symbol gfs () C iss C oss C rss 2/10 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 3 A VG S = 0 Min. Typ. 4 5.5 2150 260 105 Max. Unit S 2800 330 130 pF pF pF STH6N100/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 500 V I D = 3 A V GS = 10 V R G = 50 (see test circuit, figure 3) Test Conditions 70 210 90 280 ns ns Turn-on Current Slope V DD = 800 V I D = 6 A R G = 50 V GS = 10 V (see test circuit, figure 5) 180 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V 125 15 55 150 nC nC nC Typ. Max. Unit 190 50 265 250 65 345 ns ns ns Typ. Max. Unit 6 24 A A ID = 6 A Min. V GS = 10 V A/s SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 800 V I D = 6 A R G = 50 V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(*) Source-drain Current Source-drain Current (pulsed) V S D () Forward On Voltage I SD = 6 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 6 A di/dt = 100 A/s T j = 150 o C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 2 V 1100 ns 31 C 57 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Areas For TO-218 Safe Operating Areas For ISOWATT218 3/10 STH6N100/FI Thermal Impedeance For TO-218 Thermal Impedance For ISOWATT218 Derating Curve For TO-218 Derating Curve For ISOWATT218 Output Characteristics Transfer Characteristics 4/10 STH6N100/FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10 STH6N100/FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10 STH6N100/FI Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/10 STH6N100/FI TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 - 16.2 - 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 - 12.2 - 0.480 O 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F O R 8/10 1 2 3 P025A STH6N100/FI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 5.35 TYP. 5.65 0.210 TYP. 0.222 MAX. C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.45 1 0.017 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C 9/10 STH6N100/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 10/10 STH8N80/FI STW8N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STH8N80 STH8N80FI STW8N80 V DSS R DS( on) ID 800 V 800 V 800 V < 1.2 < 1.2 < 1.2 8.2 A 5.1 A 8.2 A TO-247 TYPICAL RDS(on) = 0.98 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 3 2 1 3 3 2 2 1 TO-218 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CONSUMER AND INDUSTRIAL LIGHTING DC-AC INVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLY (UPS) ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STH/STW8N80 VD S V DG R V GS Unit STH8N80FI Drain-source Voltage (V GS = 0) 800 V Drain- gate Voltage (R GS = 20 k) 800 V 20 Gate-source Voltage V ID Drain Current (continuous) at T c = 25 oC 8.2 5.1 A ID o Drain Current (continuous) at T c = 100 C 5.1 3.2 A Drain Current (pulsed) 35 35 A ID M(*) P tot V ISO T stg Tj o Total Dissipation at Tc = 25 C 180 70 W Derating Factor 1.44 0.56 W/o C 4000 Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature V -65 to 150 o C 150 o C (*) Pulse width limited by safe operating area May 1993 1/11 STH8N80/FI - STW8N80 THERMAL DATA TO-218/TO-247 ISOWATT218 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max o C/W 30 0.1 300 o C/W C/W o C Max Value Unit 0.69 1.78 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o AVALANCHE CHARACTERISTICS Symbol Parameter IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) 8.2 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 50 V) 800 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) 18 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) 4.5 A o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 Min. Typ. Max. 800 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Unit V T c = 125 oC V GS = 20 V 250 1000 A A 100 nA ON () Symbol Parameter Test Conditions ID = 250 A V G S(th) Gate Threshold Voltage V DS = V GS R DS( on) Static Drain-source On Resistance V GS = 10V ID = 4 A V GS = 10V I D = 4 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. Typ. Max. Unit 2 3 4 V 0.98 1.2 2.4 T c = 100 oC 8.2 A DYNAMIC Symbol gfs () C iss C oss C rss 2/11 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 4 A VG S = 0 Min. Typ. 4 7 2100 270 115 Max. Unit S 2700 350 150 pF pF pF STH8N80/FI - STW8N80 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 400 V I D = 4 A VGS = 10 V R G = 50 (see test circuit, figure 3) Test Conditions 90 280 120 350 ns ns Turn-on Current Slope V DD = 640 V I D = 8 A R G = 50 VGS = 10 V (see test circuit, figure 5) 145 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V 125 12 65 170 nC nC nC Typ. Max. Unit 160 50 235 200 65 300 ns ns ns Typ. Max. Unit 8.2 35 A A ID = 8 A Min. V GS = 10 V A/s SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 640 V I D = 8 A R G = 50 VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(*) Source-drain Current Source-drain Current (pulsed) V S D () Forward On Voltage I SD = 8.2 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 8.2 A di/dt = 100 A/s T j = 150 o C V R = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 2.5 V 900 ns 24.8 C 55 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218 3/11 STH8N80/FI - STW8N80 Thermal Impedeance For TO-218 and TO-247 Thermal Impedance For ISOWATT218 Derating Curve For TO-218 and TO-247 Derating Curve For ISOWATT218 Output Characteristics Transfer Characteristics 4/11 STH8N80/FI - STW8N80 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/11 STH8N80/FI - STW8N80 Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/11 STH8N80/FI - STW8N80 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/11 STH8N80/FI - STW8N80 TO-247 MECHANICAL DATA mm DIM. MIN. A TYP. 4.7 A1 inch MAX. MIN. 5.3 0.185 TYP. MAX. 0.208 2.87 0.113 A2 1.5 2.5 0.059 0.098 b 1 1.4 0.039 0.055 b1 2.25 0.088 b2 3.05 3.43 0.120 0.135 C 0.4 0.8 0.015 0.031 D 20.4 21.18 0.803 0.833 e 5.43 5.47 0.213 0.215 E 15.3 15.95 0.602 0.628 L 15.57 L1 3.7 4.3 0.145 0.169 Q 5.3 5.84 0.208 0.230 OP 3.5 3.71 0.137 0.146 A2 A1 A C 0.613 D b L1 b1 Q L b2 E e o 8/11 STH8N80/FI - STW8N80 TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 - 16.2 - 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 - 12.2 - 0.480 O 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F O R 1 2 3 P025A 9/11 STH8N80/FI - STW8N80 ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 5.35 TYP. 5.65 0.210 TYP. 0.222 MAX. C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.45 1 0.017 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 10/11 P025C STH8N80/FI - STW8N80 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 11/11 STP10NA40 STP10NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP10NA40 STP10NA40FI V DSS R DS( on) ID 400 V 400 V < 0.55 < 0.55 10 A 6A TYPICAL RDS(on) = 0.46 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. 3 1 3 2 1 TO-220 2 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP10NA40 VD S V DG R V GS Unit STP10NA40FI Drain-source Voltage (V GS = 0) 400 V Drain-gate Voltage (RG S = 20 k) 400 V 30 Gate-source Voltage V ID Drain Current (continuous) at T c = 25 oC 10 6 A ID Drain Current (continuous) at T c = 100 oC 6.3 3.8 A Drain Current (pulsed) 40 40 A ID M(*) P tot V ISO T stg Tj o Total Dissipation at Tc = 25 C 125 45 W Derating Factor 1 0.36 W/o C Insulation Withstand Voltage (DC) 2000 Storage Temperature Max. Operating Junction Temperature V -65 to 150 o C 150 o C (*) Pulse width limited by safe operating area January 1994 1/10 STP10NA40/FI THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case TO-220 ISOWATT220 1 2.78 Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W 62.5 0.5 300 o C/W C/W o C Max Value Unit o AVALANCHE CHARACTERISTICS Symbol Parameter IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) 10 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 50 V) 500 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) 20 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) 6.3 A o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 Min. Typ. Max. 400 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Unit V T c = 125 oC V GS = 30 V 250 1000 A A 100 nA ON () Symbol Parameter Test Conditions ID = 250 A V G S(th) Gate Threshold Voltage V DS = V GS R DS( on) Static Drain-source On Resistance V GS = 10V ID = 5 A V GS = 10V I D = 5 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. Typ. Max. Unit 2.25 3 3.75 V 0.46 0.55 1.1 T c = 100 oC 10 A DYNAMIC Symbol gfs () C iss C oss C rss 2/10 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 5 A VG S = 0 Min. Typ. 5 7.2 1180 200 55 Max. Unit S 1600 260 75 pF pF pF STP10NA40/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 200 V I D = 5 A VGS = 10 V R G = 47 (see test circuit, figure 3) Test Conditions 35 115 50 155 ns ns Turn-on Current Slope V DD = 320 V I D = 10 A R G = 47 VGS = 10 V (see test circuit, figure 5) 250 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 320 V ID = 10 A Min. VG S = 10 V A/s 54 8 27 75 nC nC nC Typ. Max. Unit 75 30 120 105 45 160 ns ns ns Typ. Max. Unit 10 40 A A SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 320 V I D = 10 A R G = 47 VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(*) Source-drain Current Source-drain Current (pulsed) V S D () Forward On Voltage I SD = 10 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 10 A di/dt = 100 A/s T j = 150 o C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min. VG S = 0 1.6 V 470 ns 6.5 C 27.5 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Areas for TO-220 Safe Operating Areas for ISOWATT220 3/10 STP10NA40/FI Thermal Impedeance For TO-220 Thermal Impedance For ISOWATT220 Derating Curve For TO-220 Derating Curve For ISOWATT220 Output Characteristics Transfer Characteristics 4/10 STP10NA40/FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10 STP10NA40/FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10 STP10NA40/FI Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/10 STP10NA40/FI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 8/10 STP10NA40/FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 O 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 O 1 2 3 L2 L4 P011G 9/10 STP10NA40/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 10/10 STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80FI V DSS R DS( on) ID 800 V 800 V < 3 < 3 4A 2.5 A TYPICAL RDS(on) = 2.4 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. 3 1 3 2 1 TO-220 2 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP4NA80 VD S V DG R V GS 800 V Drain-gate Voltage (RG S = 20 k) 800 V 30 Gate-source Voltage Drain Current (continuous) at T c = 25 oC ID P tot V ISO T stg Tj STP4NA80FI Drain-source Voltage (V GS = 0) ID ID M(*) Unit V 4 2.5 A Drain Current (continuous) at T c = 100 oC 2.5 1.6 A Drain Current (pulsed) 16 16 A o Total Dissipation at Tc = 25 C 110 45 W Derating Factor 0.88 0.36 W/o C 2000 Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature V -65 to 150 o C 150 o C (*) Pulse width limited by safe operating area February 1994 1/10 STP4NA80/FI THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case TO-220 ISOWATT220 1.13 2.77 Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W 62.5 0.5 300 o C/W C/W o C Max Value Unit o AVALANCHE CHARACTERISTICS Symbol Parameter IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) 4 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 50 V) 80 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) 3.1 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) 2.5 A o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 Min. Typ. Max. 800 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Unit V T c = 125 oC V GS = 30 V 250 1000 A A 100 nA ON () Symbol Parameter Test Conditions ID = 250 A V G S(th) Gate Threshold Voltage V DS = V GS R DS( on) Static Drain-source On Resistance V GS = 10V ID = 2 A V GS = 10V I D = 2 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. Typ. Max. Unit 2.25 3 3.75 V 2.4 3 6 T c = 100 oC 4 A DYNAMIC Symbol gfs () C iss C oss C rss 2/10 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 2 A VG S = 0 Min. Typ. 2.5 4.3 955 105 24 Max. Unit S 1350 150 35 pF pF pF STP4NA80/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 400 V I D = 2 A VGS = 10 V R G = 47 (see test circuit, figure 3) Test Conditions 27 70 40 100 ns ns Turn-on Current Slope V DD = 640 V I D = 4 A R G = 47 VGS = 10 V (see test circuit, figure 5) 170 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 640 V ID = 4 A Min. V GS = 10 V A/s 44 7 18 65 nC nC nC Typ. Max. Unit 60 20 90 85 30 130 ns ns ns Typ. Max. Unit 4 16 A A SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 640 V I D = 4 A R G = 47 VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(*) Source-drain Current Source-drain Current (pulsed) V S D () Forward On Voltage I SD = 4 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4 A di/dt = 100 A/s T j = 150 o C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 1.6 V 680 ns 10.5 C 31 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Areas for TO-220 Safe Operating Areas for ISOWATT220 3/10 STP4NA80/FI Thermal Impedeance For TO-220 Thermal Impedance For ISOWATT220 Derating Curve For TO-220 Derating Curve For ISOWATT220 Output Characteristics Transfer Characteristics 4/10 STP4NA80/FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10 STP4NA80/FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10 STP4NA80/FI Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/10 STP4NA80/FI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 8/10 STP4NA80/FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 O 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 O 1 2 3 L2 L4 P011G 9/10 STP4NA80/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 10/10 STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05-16 STP60N06-16 V DSS R DS( on) ID 50 V 60 V < 0.016 < 0.016 60 A 60 A TYPICAL RDS(on) = 0.013 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION 3 1 2 TO-220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS Parameter Value Unit STP60N05-16 STP60N06-16 Drain-source Voltage (V GS = 0) 50 60 V Drain- gate Voltage (R GS = 20 k) 50 60 V Gate-source Voltage o 20 V ID Drain Current (continuous) at T c = 25 C 60 A ID o 42 A ID M(*) P tot Drain Current (continuous) at T c = 100 C Drain Current (pulsed) 240 A Total Dissipation at Tc = 25 o C 150 W 1 W/o C Derating Factor T stg Tj Storage Temperature Max. Operating Junction Temperature -65 to 175 o C 175 o C (*) Pulse width limited by safe operating area July 1993 1/9 STP60N05-16/STP60N06-16 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ o 1 62.5 0.5 300 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) 60 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) 600 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) 150 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) 42 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 for STP60N05-16 for STP60N06-16 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 50 60 Unit V V T c = 125 oC V GS = 20 V 250 1000 A A 100 nA ON () Symbol Parameter Test Conditions ID = 250 A V G S(th) Gate Threshold Voltage V DS = V GS R DS( on) Static Drain-source On Resistance V GS = 10 V I D = 30 A V GS = 10 V ID = 30 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. Typ. Max. Unit 2 2.9 4 V 0.013 0.016 0.032 T c = 100 o C 60 A DYNAMIC Symbol gfs () C iss C oss C rss 2/9 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 30 A VG S = 0 Min. Typ. 20 40 2900 900 230 Max. Unit S 3800 1200 300 pF pF pF STP60N05-16/STP60N06-16 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 30 V ID = 30 A VGS = 10 V R G = 50 (see test circuit, figure 3) Test Conditions 75 370 105 520 ns ns Turn-on Current Slope V DD = 40 V ID = 60 A R G = 50 VGS = 10 V (see test circuit, figure 5) 190 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 40 V 105 18 44 150 nC nC nC Typ. Max. Unit 185 250 480 260 350 680 ns ns ns Typ. Max. Unit 60 240 A A ID = 60 A Min. V GS = 10 V A/s SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 40 V ID = 60 A R G = 50 VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(*) Source-drain Current Source-drain Current (pulsed) V S D () Forward On Voltage I SD = 60 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A di/dt = 100 A/s T j = 150 o C V DD = 30 V (see test circuit, figure 5) t rr Q rr I RRM Min. VG S = 0 1.6 V 120 ns 0.36 C 6 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Areas Thermal Impedance 3/9 STP60N05-16/STP60N06-16 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STP60N05-16/STP60N06-16 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STP60N05-16/STP60N06-16 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/9 Fig. 2: Unclamped Inductive Waveforms STP60N05-16/STP60N06-16 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/9 STP60N05-16/STP60N06-16 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 8/9 STP60N05-16/STP60N06-16 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9 STW20NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW20NA50 V DSS R DS( on) ID 500 V < 0.27 20 A TYPICAL RDS(on) = 0.22 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS Parameter Value Unit Drain-source Voltage (V GS = 0) 500 V Drain- gate Voltage (R GS = 20 k) 500 V Gate-source Voltage 30 V 20 A 12.7 A 80 A ID Drain Current (continuous) at T c = 25 oC ID o ID M(*) P tot Drain Current (continuous) at T c = 100 C Drain Current (pulsed) o Total Dissipation at Tc = 25 C Derating Factor T stg Tj Storage Temperature Max. Operating Junction Temperature 250 W 2 W/o C -65 to 150 o C 150 o C (*) Pulse width limited by safe operating area February 1994 1/9 STW20NA50 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ o 0.5 30 0.1 300 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 50 V) E AR Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) Max Value Unit 20 A 1000 mJ 8 mJ 12.7 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 500 Unit V T c = 125 oC V GS = 30 V 250 1000 A A 100 nA ON () Symbol Parameter Test Conditions ID = 250 A V G S(th) Gate Threshold Voltage V DS = V GS R DS( on) Static Drain-source On Resistance V GS = 10V ID = 10 A V GS = 10V I D = 10 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. Typ. Max. Unit 2.25 3 3.75 V 0.22 0.27 0.54 T c = 100 oC 20 A DYNAMIC Symbol gfs () C iss C oss C rss 2/9 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 10 A VG S = 0 Min. Typ. 10 17.5 3600 490 140 Max. Unit S 4700 650 180 pF pF pF STW20NA50 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 250 V I D = 10 A V GS = 10 V R G = 4.7 (see test circuit, figure 3) Test Conditions Min. 30 55 40 75 ns ns Turn-on Current Slope V DD = 400 V I D = 20 A R G = 47 VGS = 10 V (see test circuit, figure 5) 160 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V I D = 20 A VG S = 10 V A/s 150 18 72 195 nC nC nC Typ. Max. Unit 40 25 75 55 35 100 ns ns ns Typ. Max. Unit 20 80 A A SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 400 V I D = 20 A R G = 4.7 V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(*) Source-drain Current Source-drain Current (pulsed) V S D () Forward On Voltage I SD = 20 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 20 A di/dt = 100 A/s T j = 150 o C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min. VG S = 0 1.6 V 610 ns 10.1 C 33 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Areas Thermal Impedance 3/9 STW20NA50 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STW20NA50 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STW20NA50 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/9 Fig. 2: Unclamped Inductive Waveforms STW20NA50 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/9 STW20NA50 TO-247 MECHANICAL DATA mm DIM. MIN. A TYP. 4.7 A1 inch MAX. MIN. 5.3 0.185 TYP. MAX. 0.208 2.87 0.113 A2 1.5 2.5 0.059 0.098 b 1 1.4 0.039 0.055 b1 2.25 0.088 b2 3.05 3.43 0.120 0.135 C 0.4 0.8 0.015 0.031 D 20.4 21.18 0.803 0.833 e 5.43 5.47 0.213 0.215 E 15.3 15.95 0.602 0.628 L 15.57 L1 3.7 4.3 0.145 0.169 Q 5.3 5.84 0.208 0.230 OP 3.5 3.71 0.137 0.146 A2 A1 A C 0.613 D b L1 b1 Q L b2 E e o 8/9 STW20NA50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9