U430/431
Vishay Siliconix
Document Number: 70249
S-04031—Rev. E, 04-Jun-01 www.vishay.com
8-1
Matched N-Channel Pairs
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Typ (mV)
U430 –1 to –4 –25 10 –15 25
U431 –2 to –6 –25 10 –15 25
FEATURES BENEFITS APPLICATIONS
DTwo-Chip Design
DHigh Slew Rate
DLow Offset/Drift Voltage
DLow Gate Leakage: 15 pA
DLow Noise
DHigh CMRR: 75 dB
DTight Differential Match vs. Current
DImproved Op Amp Speed, Settling Time Accuracy
DMinimum Input Error/Trimming Requirement
DInsignificant Signal Loss/Error Voltage
DHigh System Sensitivity
DMinimum Error with Large Input Signals
DWideband Differential Amps
DHigh-Speed, Temp-Compensated,
Single-Ended Input Amps
DHigh-Speed Comparators
DImpedance Converters
DESCRIPTION
The U430/431 are matched JFET pairs assembled in a TO-78
package. These devices offer good power gain even at
frequencies beyond 250 MHz.
The TO-78 package is available with full military processing
(see Military Information).
For similar products, see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
1
TO-78
Top View
D1
S1
2
3
7
6
5
G1
S2
G2
D2
4
Case
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300 _C. . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Sidea300 mW. . . . . . . . . . . . . . . . . . . . . . . .
Totalb500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.4 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
U430/431
Vishay Siliconix
www.vishay.com
8-2 Document Number: 70249
S-04031—Rev. E, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
U430 U431
Parameter Symbol Test Conditions TypbMin Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 mA, VDS = 0 V –35 –25 –25 V
Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA –1–4–2–6V
Saturation Drain CurrentbIDSS VDS = 10 V, VGS = 0 V 12 30 24 60 mA
VGS = –15 V, VDS = 0 V –5–150 –150 pA
Gate Reverse Current IGSS TA = 150_C–10 –150 –150 nA
VDG = 10 V, ID = 5 mA –15 pA
Gate Operating Current IGTA = 150_C–10 nA
Gate-Source Forward Voltage VGS(F) IG = 10 mA , VDS = 0 V 0.8 1 1 V
Dynamic
Common-Source
Forward T ransconductancebgfs 15 10 10 mS
Common-Source
Output Conductancebgos
VDS = 10 V, ID = 10 mA , f = 1 kHz 100 250 250 mS
Common-Source
Input Capacitance Ciss 4.5 5 5
Common-Source
Reverse Transfer Capacitance Crss
VGS = –10 V, VDS = 0 V, f = 1 MHz 2 2.5 2.5 pF
Equivalent Input Noise Voltage enVDS = 10 V, ID = 10 mA
f = 100 Hz 6nV⁄
√Hz
High Frequency
Common-Source
Forward Transconductance gfs 14
Common-Source
Output Conductance gos VDS = 10 V, ID = 10 mA
f = 100 MHz 0.13 mS
Power-Match
Source Admittance gig 12
Matching
Differential
Gate-Source Voltage |VGS1–VGS2|VDG = 10 V, ID = 10 mA 25 mV
Saturation Drain
Current RatiocIDSS1
IDSS2 VDS = 10 V, VGS = 0 V 0.95 0.9 1 0.9 1
T ransconductance Ratiocgfs1
gfs2 VDS = 10 V, ID = 10 mA, f = 1 kHz 0.95 0.9 1 0.9 1
Gate-Source
Cutof f Voltage RatiocVGS(off)1
VGS(off)2 VDS = 10 V, ID = 1 nA 0.95 0.9 1 0.9 1
Differential Gate Current |IG1–IG2|VDG = 10 V, ID = 5 mA –2 pA
Common Mode Rejection Ratio CMRR VDG = 5 to 10 V, ID = 10 mA 75 dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZBD
b. Pulse test: PW v300 ms duty cycle v3%.
c. Assumes smaller value in the numerator.
U430/431
Vishay Siliconix
Document Number: 70249
S-04031—Rev. E, 04-Jun-01 www.vishay.com
8-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
100
0–5–4–3–1
80
20
0
50
40
10
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
VGS(off) – Gate-Source Cutoff Voltage (V) VDG – Drain-Gate Voltage (V)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
60
40
–2
30
20
04312159
IGSS @ 125_C
TA = 125_C
IG @ ID = 10 mA
10 mA
TA = 25_C
200 mA
IGSS @ 25_C
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance
vs. Drain Current
ID – Drain Current (mA)VGS(off) – Gate-Source Cutoff Voltage (V)
TA = –55_C
125_C
VGS(off) = –3 V
100
–3–5–4–1
80
0
300
240
120
60
0
60
40
20
–20
180
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
rDS
0.1 1 10
20
16
8
4
0
12
gos
30
0–1.2 –1.6–0.4 –2
24
12
6
0–0.8
18
Transconductance vs. Gate-Source Voltage
VGS – Gate-Source Voltage (V)
TA = –55_C
125_C
50
0–1.8 –2.4–0.6 –3
40
20
10
0–1.2
30
Transconductance vs. Gate-Source Voltage
VGS – Gate-Source Voltage (V)
TA = –55_C
25_C
125_C
200 mA
VDS = 10 V
f = 1 kHz
VGS(off) = –3 V VDS = 10 V
f = 1 kHz
VGS(off) = –1.5 V VDS = 10 V
f = 1 kHz
25_C
25_C
IDSS – Saturation Drain Current (mA)
gfs – Forward Transconductance (mS)
rDS(on) – Drain-Source On-Resistance ( Ω )
gfs – Forward Transconductance (mS)
gos – Output Conductance (µS)
gfs – Forward Transconductance (mS)
gfs – Forward Transconductance (mS) IG – Gate Leakage
U430/431
Vishay Siliconix
www.vishay.com
8-4 Document Number: 70249
S-04031—Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
VGS – Gate-Source Voltage (V)
30
0–1.2–0.4 –1.6 –2
24
12
6
0
18
–0.8
TA = –55_C
125_C
Transfer Characteristics
VGS – Gate-Source Voltage (V)
100
0–1.8–0.6 –2.4 –3
80
40
20
0
60
–1.2
TA = –55_C
25_C
125_C
Output Characteristics
VDS – Drain-Source Voltage (V)
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
20
068210
16
8
4
04
12
VGS(off) = –1.5 V
Output Characteristics
VDS – Drain-Source Voltage (V)
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
15
0 0.40.2 0.8 1
12
6
3
0
9
0.6
–1.0 V
VGS(off) = –1.5 V
Output Characteristics
VDS – Drain-Source Voltage (V)
VGS = 0 V
–1.2 V
–0.4 V
–1.6 V
–0.8 V
30
0 0.40.2 0.8 1
24
12
6
0
18
0.6
–2.0 V
–2.4 V
VGS(off) = –3 V
Output Characteristics
VDS – Drain-Source Voltage (V)
50
042810
40
20
10
0
30
6
–2.4 V
VGS = 0 V
–0.4 V
–0.8 V
–1.2 V
–1.6 V
–2.0 V
VGS(off) = –3 V
25_C
VGS(off) = –3 V VDS = 10 V
f = 1 kHz
VGS(off) = –1.5 V VDS = 10 V
f = 1 kHz
ID – Drain Current (mA)
ID – Drain Current (mA)
ID – Drain Current (mA)
ID – Drain Current (mA)ID – Drain Current (mA)
ID – Drain Current (mA)
U430/431
Vishay Siliconix
Document Number: 70249
S-04031—Rev. E, 04-Jun-01 www.vishay.com
8-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
1 10 100
100
80
40
20
0
60 VGS(off) = –1.5 V
TA = 25_C
–3 V
On-Resistance vs. Drain Current
ID – Drain Current (mA)
1100.1
100
80
40
20
0
60
ID – Drain Current (mA)
AV+gfs RL
1)RLgos
RL+10 V
ID
Assume VDD = 15 V, VDS = 5 V
VGS(off) = –1.5 V
–3 V
Circuit Voltage Gain vs. Drain Current
15
0–12 –16 –20–4
12
6
3
0
9
–8
Common-Source Input Capacitance
vs. Gate-Source Voltage
VDS = 0 V
f = 1 MHz
5 V
VGS – Gate-Source Voltage (V)
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
10
0–12 –20–16–4
8
4
2
0
6
–8
VDS = 0 V
f = 1 MHz
5 V
VGS – Gate-Source Voltage (V)
– Reverse Feedback Capacitance (pF)Crss
100
10
1
0.1100 1000
(mS)
VDG = 10 V
ID = 10 mA
Common–Gate gig
big
Input Admittance vs. Frequency
f – Frequency (MHz)
100
10
1
0.1 100 1000
(mS)
VDG = 10 V
ID = 10 mA
Common–Gate –gfg
bfg
Forward Admittance vs. Frequency
f – Frequency (MHz)
200 500 200 500
– Input Capacitance (pF)Ciss rDS(on) – Drain-Source On-Resistance ( Ω )
AV – Voltage Gain
U430/431
Vishay Siliconix
www.vishay.com
8-6 Document Number: 70249
S-04031—Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10 100 1 k 100 k10 k
20
16
8
4
0
12
Equivalent Input Noise Voltage vs. Frequency
ID = 1 mA
VDS = 10 V
ID = 10 mA
f – Frequency (Hz)
150
120
60
30
00.1 1 10
90
Output Conductance vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
25_C
125_C
10
1
0.1
0.01 100 1000
(mS)
VDG = 10 V
ID = 10 mA
Common–Gate
–brg
–grg
+grg
Reverse Admittance vs. Frequency
f – Frequency (MHz)
100
10
1
0.1 100 1000
(mS)
VDG = 10 V
ID = 10 mA
Common–Gate
gog
bog
Output Admittance vs. Frequency
f – Frequency (MHz)
200 500 200 500
VGS(off) = –3 V VDS = 10 V
f = 1 kHz
en – Noise Voltage nV / Hz
gos – Output Conductance (µS)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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