NPN Silicon Darlington Transistors BCV 27 BCV47 For general AF applications High collector current High current gain Complementary types: BCV 26, BCV 46 (PNP) Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BCV 27 BCV 47 FFs FGs Q62702-C1474 Q62702-C1501 B SOT-23 E C Maximum Ratings Parameter Symbol Values BCV 47 BCV 27 Unit Collector-emitter voltage VCE0 30 60 Collector-base voltage VCB0 40 80 Emitter-base voltage VEB0 10 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 74 C Ptot 360 mW Junction temperature Tj 150 C Storage temperature range Tstg V mA - 65 ... + 150 Thermal Resistance Junction - ambient2) Rth JA 280 Junction - soldering point Rth JS 210 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCV 27 BCV 47 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCV 27 BCV 47 V(BR)CE0 Collector-base breakdown voltage IC = 100 A BCV 27 BCV 47 V(BR)CB0 Emitter-base breakdown voltage, IE = 10 A V(BR)EB0 Collector cutoff current VCB = 30 V VCB = 60 V VCB = 30 V, TA = 150 C VCB = 60 V, TA = 150 C ICB0 BCV 27 BCV 47 BCV 27 BCV 47 Emitter cutoff current, VEB = 4 V IEB0 DC current gain1) IC = 100 A, VCE = 1 V hFE IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 0.5 A, VCE = 5 V BCV 27 BCV 47 BCV 27 BCV 47 BCV 27 BCV 47 BCV 27 BCV 47 V 30 60 - - - - 40 80 - - - - 10 - - - - - - - - - - 100 100 10 10 nA nA A A - - 100 nA - 4000 2000 10000 4000 20000 10000 4000 2000 - - - - - - - - - - - - - - - - Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VCEsat - - 1 V Base-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VBEsat - - 1.5 Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT - 170 - MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo - 3.5 - pF AC characteristics 1) Pulse test: t 300 s, D = 2 %. Semiconductor Group 2 BCV 27 BCV 47 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 BCV 27 BCV 47 Base-emitter saturation voltage IC = f (VBEsat) hFE = 1000 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 1000 Collector cutoff current ICB0 = f (TA) VCB = VCE max DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 4