Semiconductor Group 2
BCV 27
BCV 47
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain1)
C = 100 µA, VCE = 1 V BCV 27
BCV 47
C = 10 mA, VCE = 5 V BCV 27
BCV 47
C = 100 mA, VCE = 5 V BCV 27
BCV 47
C = 0.5 A, VCE = 5 V BCV 27
BCV 47
VCollector-emitter breakdown voltage
C = 10 mA BCV 27
BCV 47
V(BR)CE0
30
60 –
––
–
nA
nA
µA
µA
Collector cutoff current
VCB = 30 V BCV 27
VCB = 60 V BCV 47
VCB = 30 V, TA = 150 ˚C BCV 27
VCB = 60 V, TA = 150 ˚C BCV 47
ICB0 –
–
–
–
–
–
–
–
100
100
10
10
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
C = 100 µABCV 27
BCV 47
V(BR)CB0
40
80 –
––
–
Emitter-base breakdown voltage, IE = 10 µAV(BR)EB0 10 – –
V
Collector-emitter saturation voltage1)
C = 100 mA, IB = 0.1 mA VCEsat ––1
–hFE 4000
2000
10000
4000
20000
10000
4000
2000
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Base-emitter saturation voltage1)
C = 100 mA, IB = 0.1 mA VBEsat – – 1.5
nAEmitter cutoff current, VEB = 4 V IEB0 – – 100
MHzTransition frequency
C = 50 mA, VCE = 5 V, f = 20 MHz fT– 170 –
AC characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo – 3.5 –
1) Pulse test: t≤300
s
D = 2 %.