Semiconductor Group 1
NPN Silicon Darlington Transistors BCV 27
BCV47
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package1)
Pin Configuration
BCV 27
BCV 47 Q62702-C1474
Q62702-C1501
FFs
FGs SOT-23
123
B E C
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm ×40 mm ×1.5 mm/6 cm2 Cu.
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V
Peak collector current ICM
Collector current ICmA
Junction temperature Tj˚C
Total power dissipation, TS = 74 ˚C Ptot mW
Storage temperature range Tstg
Collector-base voltage VCB0
Thermal Resistance
Junction - ambient2) Rth JA 280 K/W
500
800
360
150
– 65 … + 150
Emitter-base voltage VEB0
Base current IB100
30 60
40 80
BCV 27 BCV 47
Peak base current IBM 200
10 10
Junction - soldering point Rth JS 210
For general AF applications
High collector current
High current gain
Complementary types: BCV 26, BCV 46 (PNP)
5.91
Semiconductor Group 2
BCV 27
BCV 47
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain1)
I
C = 100 µA, VCE = 1 V BCV 27
BCV 47
I
C = 10 mA, VCE = 5 V BCV 27
BCV 47
I
C = 100 mA, VCE = 5 V BCV 27
BCV 47
I
C = 0.5 A, VCE = 5 V BCV 27
BCV 47
VCollector-emitter breakdown voltage
I
C = 10 mA BCV 27
BCV 47
V(BR)CE0
30
60
nA
nA
µA
µA
Collector cutoff current
VCB = 30 V BCV 27
VCB = 60 V BCV 47
VCB = 30 V, TA = 150 ˚C BCV 27
VCB = 60 V, TA = 150 ˚C BCV 47
ICB0
100
100
10
10
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 100 µABCV 27
BCV 47
V(BR)CB0
40
80
Emitter-base breakdown voltage, IE = 10 µAV(BR)EB0 10
V
Collector-emitter saturation voltage1)
I
C = 100 mA, IB = 0.1 mA VCEsat ––1
hFE 4000
2000
10000
4000
20000
10000
4000
2000
Base-emitter saturation voltage1)
I
C = 100 mA, IB = 0.1 mA VBEsat 1.5
nAEmitter cutoff current, VEB = 4 V IEB0 100
MHzTransition frequency
I
C = 50 mA, VCE = 5 V, f = 20 MHz fT 170
AC characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo 3.5
1) Pulse test: t300
µ
s
,
D = 2 %.
Semiconductor Group 3
BCV 27
BCV 47
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC =f(tp)
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
Transition frequency fT=f(IC)
VCE = 5 V
Semiconductor Group 4
BCV 27
BCV 47
Base-emitter saturation voltage
IC = f (VBEsat)
hFE = 1000
Collector cutoff current ICB0 = f (TA)
VCB = VCE max
Collector-emitter saturation voltage
IC=f(VCEsat)
hFE = 1000
DC current gain hFE =f(IC)
VCE = 5 V