APT11044B2FLL APT11044LFLL 1100V 26A 0.440 POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Increased Power Dissipation * Lower Miller Capacitance * Easier To Drive * Lower Gate Charge, Qg * Popular T-MAXTM or TO-264 Package * FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol VDSS ID B2FLL T-MAXTM TO-264 LFLL D G S All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APT11044 UNIT 1100 Volts L A C I N H C N E T O I E AT C N RM A V FO D A IN 26 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 694 Watts Linear Derating Factor 5.56 W/C VGSM PD TJ,TSTG 104 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts C 300 26 (Repetitive and Non-Repetitive) 1 Amps 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 1100 Volts 26 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.440 UNIT Ohms Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A 050-7177 Rev- 4-2002 Symbol APT11044 B2FLL - LFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP Ciss Input Capacitance VGS = 0V 5650 Coss Output Capacitance VDS = 25V 850 Crss Reverse Transfer Capacitance f = 1 MHz 161 VGS = 10V 207 VDD = 0.5 VDSS ID = ID [Cont.] @ 25C 28 131 VGS = 15V 18 VDD = 0.5 VDSS 9 ID = ID [Cont.] @ 25C 45 RG = 0.6 14 Qg Total Gate Charge 3 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge t d(on) tr t d(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time L A C I N H C N E T IO E T C MA N A OR V AD INF MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions TYP Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ Peak Diode Recovery dv/dt dt MIN (Body Diode) (VGS = 0V, IS = -ID [Cont.]) 5 MAX 26 104 UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 320 Tj = 125C 650 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 3.60 Tj = 125C 9.72 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 16.5 Tj = 125C 24.7 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX Junction to Case RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 8.88mH, R = 25, Peak I = 26A j G L temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 050-7177 Rev- 4-2002 0.40 (.016) 0.79 (.031) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 19.81 (.780) 20.32 (.800) 19.81 (.780) 21.39 (.842) Gate Drain Source Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 2.29 (.090) 2.69 (.106) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) UNIT 0.18 RJC Dimensions in Millimeters and (Inches) 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 C/W