NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC549, A, B, C
BC550, A, B, C
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS
Collector Emitter Voltage BC549 VCEO IC=10mA,IB=0 30 V
BC550 45 V
Collector Base Voltage BC549 VCBO IC=10µA,IE=0 30 V
BC550 50 V
Emitter Base Voltage VEBO IE=10µA, IC=0 5V
Collector Cut off Current ICBO VCB=30V, IE = 0 15 nA
VCB=30V, IE = 0, 5µA
Ta= +125ºC
EmitterCut off Current IEBO VEB=4V, IC = 0 15 nA
DC Current Gain BhFE VCE=5V,IC=10uA 100 150
C100 270
BC549,BC550 VCE=5V,IC=2mA 110 800
A110 220
B200 290 450
C420 500 800
Collector Emitter Saturation Voltage VCE(sat) IC=10mA,IB=0.5mA 0.075 0.25 V
IC=10mA,IB=see note1 0.30 0.6 V
IC=100mA,IB=5mA* 0.25 0.6 V
Base Emitter Saturation Voltage VBE(sat) IC=100mA,IB=5mA* 1.1 V
Base Emitter On Voltage VBE(on) IC=10µA,VCE=5V 0.52 V
IC=100µA,VCE=5V 0.55 V
IC=2mA,VCE=5V 0.55 0.62 0.70 V
Continental Device India Limited Data Sheet Page 2 of 5