21 fo 1 egaP 00.1.veR 0010JE3110SD80R
Nov 29, 2013
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PIN CONNECTION
(Top View)
1. Anode
2. Cathode
3. Emitter
4. Collector
4 3
1 2
PS2913-1
SINGLE Tr. OUTPUT, HIGH COLLECTOR TO
EMITTER VOLTAGE, 4-PIN ULTRA SMALL
FLAT-LEAD PHOTOCOUPLER
DESCRIPTION
The PS2913-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor in one package for high density mounting applications.
An ultra small flat-lead package has been provided which realizes a reduction in mounting area of about 30% compared
with the PS28xx series.
FEATURES
•Ultra small flat-lead package (4.6 (L) × 2.5 (W) × 2.1 (H) mm)
•High collector to emitter voltage (VCEO = 120 V)
•High isolation voltage (BV = 2 500 Vr.m.s.)
•Ordering number of taping product: PS2913-1-F3: 3 500 pcs/reel
•Safety standards
•UL approved: No. E72422
•BSI approved (BS EN 60065, BS EN 60950)
•DIN EN 60747-5-5 (VDE 0884-5) approved (Option)
APPLICATIONS
•DC/DC converter
•Modem/PC card
Data Sheet
R08DS0113EJ0100
Rev.1.00
Nov 29, 2013
<R>
A Business Partner of Renesas Electronics Corporation.
PS2913-1e
R08DS0113EJ0100 Rev.1.00 Page 2 of 12
Nov 29, 2013
PACKAGE DIMENSIONS (UNIT: mm)
5.0±0.2
0.15 +0.1
–0.05
1.27
2.1 MAX.
0.4±0.1
2.5±0.3
43
12
R
4.6±0.2
0.2±0.1
4.1 MIN.
MARKING EXAMPLE
Assembly lot
6
Week assembled
No. 1 pin
mark
(Nicked
corner)
Company initial
(Engraved R)
01
13
601
R
*1
*1 Bar : Pb-Free
Year Assembled
(Last 1 Digit)
Ni/Pd/Au PLATING
Last number of
type No. : 13
PHOTOCOUPLER CONSTRUCTION
Parameter MIN.
Air Distance 4 mm
Creepage Distance 4 mm
Isolation Distance 0.4 mm
<R>
<R>
A Business Partner of Renesas Electronics Corporation.
PS2913-1e
R08DS0113EJ0100 Rev.1.00 Page 3 of 12
Nov 29, 2013
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification
Packing Style Safety Standard
Approval
Application
Part
Number*1
PS2913-1 PS2913-1-AX Pb-Free 50 pcs (Tape 50 pcs cut) Standard products PS2913-1
PS2913-1-F3 PS2913-1-F3-
AX
(Ni/Pd/Au) Embossed Tape 3 500
pcs/reel
(UL, BSI approved)
PS2913-1-V PS2913-1-V-AX 50 pcs (Tape 50 pcs cut) UL, BSI,
DIN EN 60747-5-5
PS2913-1-V-F3 PS2913-1-V-F3-
AX
Embossed Tape 3 500
pcs/reel
(VDE 0884-5)
Approved (Option)
Note: *1. For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current IF50 mA
Forward Current Derating
Δ
IF/°C 0.5 mA/°C
Peak Forward Current *1 IFP 0.5 A
Power Dissipation PD60 mW
Reverse Voltage VR6 V
Detector Collector to Emitter Voltage VCEO 120 V
Emitter to Collector Voltage VECO 6 V
Collector Current IC30 mA
Power Dissipation Derating
Δ
PC/°C 1.2 mW/°C
Power Dissipation PC120 mW
Isolation Voltage *2 BV 2 500 Vr.m.s.
Total Power Dissipation PT160 mW
Operating Ambient Temperature TA −55 to +100 °C
Storage Temperature Tstg −55 to +150 °C
Notes: *1. PW = 100
μ
s, Duty Cycle = 1%
*2. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
<R>
A Business Partner of Renesas Electronics Corporation.
PS2913-1e
R08DS0113EJ0100 Rev.1.00 Page 4 of 12
Nov 29, 2013
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF I
F = 1 mA 0.9 1.1 1.3 V
Reverse Current IR V
R = 5 V 5
μ
A
Terminal Capacitance Ct V = 0 V, f = 1 MHz 15 pF
Transistor Collector to Emitter Dark
Current
ICEO I
F = 0 mA, VCE = 120V 100 nA
Coupled Current Transfer Ratio
(IC/IF) *1
CTR IF = 1 mA, VCE = 5 V 50 100 200 %
Collector Saturation
Voltage
VCE(SAT) IF = 1 mA, IC = 0.2 mA 0.13 0.3 V
Isolation Resistance RI-O V
I-O = 1 kVDC 1011 Ω
Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF
Rise Time *2 tr V
CC = 5 V, IC = 2 mA, RL = 100 Ω10
μ
s
Fall Time *2 tf 10
Turn-on Time *2 ton V
CC = 5 V, IF = 1 mA, RL = 5 kΩ 80
μ
s
Storage Time *2 ts5
Turn-off Time *2 toff 50
Notes: *1. CTR rank
N : 50 to 200 (%)
K : 100 to 200 (%)
L : 75 to 150 (%)
M : 50 to 100 (%)
*2. Test circuit for switching time
Input
Output
90%
10%
t
r
t
f
t
s
t
d
t
on
V
CC
V
OUT
I
F
I
C
Pulse Input
In monitor
PW = 100
s
Duty cycle = 1/10
<R>
A Business Partner of Renesas Electronics Corporation.
PS2913-1e
R08DS0113EJ0100 Rev.1.00 Page 5 of 12
Nov 29, 2013
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Ambient Temperature T
A
(°C)
Maximum Forward Current I
F
(mA)
MAXIMUM FORWARD CURRENT vs.
AMBIENT TEMPERATURE
Ambient Temperature T
A
(°C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Ambient Temperature T
A
(°C)
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector Saturation Voltage VCE(sat) (V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
80
40
60
20
025 50 75 100
0.5 mA/°C
140
100
120
40
60
80
20
25 50 75 100 125
0
100
10
1
0.1
0.01
0.0 0.5 1.0 1.5 2.0
0°C
–25°C
–50°C
+60°C
+25°C
T
A
= +100°C
50 000
0.1
500
5 000
10
10 000
1 000
100
50
5
1
0.5
–60 0 40 80–40 –20 20 60 100
V
CE
= 40 V
24 V
10 V
6842010
10
8
6
4
21 mA
0.5 mA
12
I
F
= 5 mA
2 mA
CTR = 100%
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0
1 mA
I
F
= 0.5 mA
2 mA
5 mA
CTR = 100%
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
PS2913-1e
R08DS0113EJ0100 Rev.1.00 Page 6 of 12
Nov 29, 2013
FREQUENCY RESPONSE
Frequency f (kHz)
Normalized Gain Gv
Forward Current I
F
(mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
Normalized to 1.0
at T
A
= 25°C,
I
F
= 1 mA, V
CE
= 5 V
Ambient Temperature T
A
(°C)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Switching Time t ( s)
μ
Load Resistance R
L
(Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
1.2
1.4
–50
1.0
0.8
0.6
0.4
0.2
0.0 –25 025
50 75 100 0.1 110 100
0
100
150
200
250
300
1
10
100
1 000
10 000
V
CE
= 5 V,
n = 3
1k 10k 100 k 1 000 k
Sample A
B
C
1.2
0.4
0.0
0.8
0.6
0.2
1.0
R
L
= 1 kΩ
510 Ω
300 Ω
100 Ω
500
1100.5 50 1005
50
I
F
= 1 mA,
V
CC
= 5 V,
CTR = 120%
t
s
t
on
t
off
Remark The graphs indicate nominal characteristics.
<R>
A Business Partner of Renesas Electronics Corporation.
PS2913-1e
R08DS0113EJ0100 Rev.1.00 Page 7 of 12
Nov 29, 2013
TAPING SPECIFICATIONS (UNIT: mm)
PS2913-1-F3
1.55±0.05
4.0±0.1
2.0±0.05
4.0±0.1
1.75±0.1
2.9 MAX.
0.3
2.9±0.1 2.4±0.1
1.5
+0.1
–0
5.3±0.1
5.5±0.05
12.0±0.2
Tape Direction
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
Packing: 3 500 pcs/reel
330±2.0
100±1.0
2.0±0.5
21.0±0.8
2.0±0.5
13.5±1.0
13.0±0.2
RRRR
<R>
A Business Partner of Renesas Electronics Corporation.
PS2913-1e
R08DS0113EJ0100 Rev.1.00 Page 8 of 12
Nov 29, 2013
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
4.14
(0.35)
4.7
5.7
1.27
0.8
0.6
24-R0.1
( ) : Reference value
Remark This drawing is considered to meet air and outer creepage distance 4.0 mm minimum. All dimensions in
this figure must be evaluated before use.
A Business Partner of Renesas Electronics Corporation.
PS2913-1e
R08DS0113EJ0100 Rev.1.00 Page 9 of 12
Nov 29, 2013
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows Three or less
• Flux Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% or less is
recommended.)
220˚C
Package Surface Temperature T (˚C)
Time (s)
(heating)
to 10 s
to 60 s
260˚C MAX.
Recommended Temperature Profile of Infrared Reflow
120±30 s
(preheating)
180˚C
120˚C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum
chlorine content of 0.2 Wt% or less is recommended.)
(3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350°C or below
• Time (each pin) 3 seconds or less
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% or less is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
<R>
A Business Partner of Renesas Electronics Corporation.
PS2913-1e
R08DS0113EJ0100 Rev.1.00 Page 10 of 12
Nov 29, 2013
2. Cautions Regarding Noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-
emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum
ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according to
product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
A Business Partner of Renesas Electronics Corporation.
PS2913-1e
R08DS0113EJ0100 Rev.1.00 Page 11 of 12
Nov 29, 2013
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter Symbol Spec. Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1) 55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and
random test)
Upr = 1.6 × UIORM, Pd < 5 pC
UIORM
Upr
570
912
Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM, Pd < 5 pC
Upr 1 068 Vpeak
Highest permissible overvoltage UTR 4 000 Vpeak
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303
Part 11))
CTI 175
Material group (DIN EN 60664-1 VDE0110 Part 1) III a
Storage temperature range Tstg –55 to +150 °C
Operating temperature range TA –55 to +100 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see
thermal derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Tsi
Isi
Psi
Ris MIN.
150
300
500
109
°C
mA
mW
Ω
<R>
A Business Partner of Renesas Electronics Corporation.
PS2913-1e
R08DS0113EJ0100 Rev.1.00 Page 12 of 12
Nov 29, 2013
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
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All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History PS2913-1 Data Sheet
Description
Rev. Date Page Summary
3.00 May , 2006 − First edition issued
1.00 Nov 29, 2013 Throughout Renesas format is applied to this data sheet.
p.1 Modification of FEATURES
p.2 Modification of PACKAGE DIMENSIONS
Modification of MARKING EXAMPLE
p.3 Modification of ORDERING INFORMATION
p.4 Modification of ELECTRICAL CHARACTERISTICS
p.6 Modification of TYPICAL CHARACTERISTICS
p.7 Modification of TAPING SPECIFICATIONS
p.9 Modification of NOTES ON HANDLING
p.11 Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
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