UNISONIC TECHNOLOGIES CO., LTD
2SA1015 PNP SILICON TRANSISTOR
www.unisonic.com.tw 1of 4
Copyright © 2009 Unisonic Technologies Co., LTD QW-R201-004.C
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
* Collector-Emitter Voltage: BVCEO=-50V
* Collector Current up to 150mA
* High hFE Linearity
* Complement to UTC 2SC1815
Lead-free: 2SA1015L
Halogen-free: 2SA1015G
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Halogen Free Package 1 2 3 Packing
2SA1015-x-T92-B 2SA1015L-x-T92-B 2SA1015G-x-T92-B TO-92 E C B Tape Box
2SA1015-x-T92-K 2SA1015L-x-T92-K 2SA1015G-x-T92-K TO-92 E C B Bulk
2SA1015 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2of 4
www.unisonic.com.tw QW-R201-004.C
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -150 mA
Base Current IB -50 mA
Collector Dissipation PC 400 mW
Junction Temperature TJ 125 °C
Storage Temperature TSTG -55 ~ +125 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0 -50 V
Collector-Emitter Breakdown Voltage BVCEO IC=-10mA, IB=0 -50 V
Emitter-Base Breakdown Voltage BVEBO IE=-10μA, IC=0 -5 V
Collector Cut-off Current ICBO V
CB=-50V, IE=0 -100 nA
Emitter Cut-off Current IEBO V
EB=-5V, IC=0 -100 nA
hFE1 V
CE=-6V, IC=-2mA 120 700
DC Current Gain hFE2 V
CE=-6V, IC=-150mA 25
Collector-Emitter Saturation Voltage VCE(SAT) IC=-100mA, IB=-10mA -0.1 -0.3 V
Base-Emitter Saturation Voltage VBE(SAT) IC=-100mA, IB=-10mA -1.1 V
Output Capacitance COB V
CB=-10V, IE=0, f=1MHz 4.0 7.0 pF
Current Gain Bandwidth Product fT V
CE=-10V, Ic=-1mA 80 MHz
Noise Figure NF VCE=-6V , IC=-0.1mA,
RG=1kΩ, f=100Hz 0.5 6 dB
CLASSIFICATION OF hFE1
RANK Y GR BL
RANGE 120-240 200-400 350-700
2SA1015 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3of 4
www.unisonic.com.tw QW-R201-004.C
TYPICAL CHARACTERISTICS
Static characteristics
Collector-Emitter Voltage, BVCEO (V)
-0 -4 -8 -12 -16 -20
0
-10
-20
-30
-40
-50
IB=-300µA
DC Current Gain
Collector current, IC(mA)
VCE=-6V
IB=-250µA
IB=-200µA
IB=-150µA
IB=-100µA
IB=-50µA
-10-1 -100-101-102-103
100
101
102
103
Base-Emitter on Voltage
Base-Emitter Voltage, BVBEO (V)
0 -0.2 -0.4 -0.6 -0.8 -1.0
VCE=-6V
Collector Current, IC(mA)
Saturation voltage
IC=10xIB
-10-1
-100
-101
-102
-10-1 -100-101-102-103
-10-2
-10-1
-100
-101
VCE(SAT)
VBE(SAT)
Current Gain-Bandwidth Product Collector Output Capacitance
Collector current, IC(mA)
VCE=-6V
Collector-Base Voltage, BVCBO (V)
f=1MHz
IE=0
-10-1 -100-101-102
100
101
102
103
-100-101-102-103
-10-1
-100
-101
-102
-10-1
2SA1015 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4of 4
www.unisonic.com.tw QW-R201-004.C
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
