INCH-POUND MIL-PRF-19500/304F 17 April 2019 SUPERSEDING MIL-PRF-19500/304E 20 September 2011 The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 August 2019. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R, AND A-VERSIONS, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for 12 and 20 ampere, silicon, fast recovery, power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type. 1.2 Physical dimensions. The device package outlines are as follows: Isolated 2 terminal stud mount (DO-10) in accordance with figure 1, non-isolated 1 terminal stud mount (DO-4) in accordance with figure 2, and unencapsulated die in accordance with figure 3. 1.3 Maximum ratings. Unless otherwise specified, TC = 25C. Type 1N3885 1N3885A 1N3890, R 1N3890A, AR 1N3886 1N3886A 1N3891, R 1N3891A, AR 1N3888 1N3888A 1N3893, R 1N3893A, AR (1) VR VRWM IO (1) TC = 100C IFSM TC = 100C t = 1/120 s trr TC V V (pk) A dc A (pk) ns C 100 100 100 100 200 200 200 200 400 400 400 400 100 100 100 100 200 200 200 200 400 400 400 400 12 20 12 20 12 20 12 20 12 20 12 20 150 225 175 250 150 225 175 250 150 225 175 250 200 150 200 150 200 150 200 150 200 150 200 150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 Derate linearly 2 percent of IO /C for TC > 100C, see figure 4. Storage temperature: TC = -65C to +150C for 1N3885, 1N3886, 1N3888 and A versions. Storage temperature: TC = -65C to +175C for 1N3890, 1N3891, 1N3893 and A, R, AR versions. Barometric pressure reduced: 15 mmHg. Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https://assist.dla.mil. AMSC N/A FSC 5961 MIL-PRF-19500/304F 1.4 Primary electrical characteristics. Unless otherwise specified, TC = 25C. Type IR1 VR (V dc) 1N3885, A, 1N3890, A, 1N3890R, AR 1N3886, A, 1N3891, A, 1N3891R, AR 1N3888, A, 1N3893, A, 1N3893R, AR Type Isolated non - A Isolated A Non isolated non - A Non isolated A 100 200 400 IR2 TA = +150C A dc VR (V dc) mA dc 10.0 10.0 10.0 100 200 400 2 2 2 RJC (C/W) 3.0 2.5 2.0 1.5 (1) (1) See figure 5 for thermal impedance curves. 1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500, and as specified herein. See 6.4 for PIN construction example, 6.5 for a list of available PINs, and 6.6 for supersession information. 1.5.1 JAN certification mark and quality level. 1.5.1.1 Quality level designators for encapsulated devices. The quality level designators for encapsulated devices that are applicable for this specification sheet from the lowest to the highest level are as follows: "JAN", "JANTX", "JANTXV", and "JANS". 1.5.1.2 Quality level designators for unencapsulated devices (die). The quality level designators for unencapsulated devices that are applicable for this specification sheet are "JANHC" and "JANKC". 1.5.2 Device type. The designation system for the devices covered by this specification sheet is as follows. 1.5.2.1 First number and first letter symbols. The devices of this specification sheet use the first number and letter symbols "1N". 1.5.2.2 Second number symbols. The second number symbols for the devices covered by this specification sheet are as follows: "3885", "3886", "3888", "3890", "3891" and "3893". 1.5.3 Suffix symbols. The following suffix symbol(s) are incorporated into the PINs for this specification sheet. A blank designator identifies that the device uses the electrical parameters of the registered device. A An "A" designator identifies that the device has modified electrical parameters in comparison to the registered device. R A "R" designator identifies that the device terminals have been reversed (reverse polarity). AR An "AR" designators identifies that the device has both suffix symbol attributes (modified electrical parameters and reverse polarity terminals). 1.5.3.1 Device types with no suffix symbols. Applicable to all device types. 1.5.3.2 Device types with an "A" suffix symbol. Applicable to all device types. 1.5.3.3 Device types with either a "R" or "AR" suffix symbols. Device types 1N3890, 1N3891, 1N3893 only. 2 MIL-PRF-19500/304F 1.5.5 Lead finish. The lead finishes applicable to this specification sheet are listed on QPDSIS-19500. 1.5.6 Die identifiers for un-encapsulated devices. The only manufacturer die identifier that is applicable for this specification sheet is "A" (see 6.5 and figure 3). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in section 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods For Semiconductor Devices. (Copies of these documents are available online at https://quicksearch.dla.mil.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this specification and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. PRM Peak reverse power 3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1 and 2 for encapsulated devices, and figure 3 for unencapsulated die. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500. Where a choice of lead finish is desired, it shall be specified in the contract or purchase order (see 6.2). 3.4.2 Diode types 1N3885, 1N3886, and 1N3888 (see figure 1). Diode types1N3885, 1N3886, and 1N3888 have the stud and seating plane electrically insulated from the anode, cathode, and case. 3 MIL-PRF-19500/304F T2 T1 SEE NOTE 2 K JUNCTION TEMP MEASUREMENT REF POINT CATHODE T TD J C OM CD HF CH1 HT HT1 CH SP OAH SL SEATING PLANE Isolated types: 1N3885, 1N3885A, 1N3886, 1N3886A, 1N3888, and 1N3888A LTR C CD CH CH1 HF HT HT1 J K NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. Dimensions Inches Millimeters Min Max Min Max .020 .038 0.51 0.97 .487 12.37 .550 13.97 .050 1.27 .487 .500 12.37 12.70 .085 .160 2.16 4.06 .040 1.02 .750 .875 19.05 22.22 .110 .140 2.79 3.56 LTR Notes OAH OM SL SP T T1 T2 TD Dimensions Inches Millimeters Min Max Min Max .950 24.13 .163 .189 4.14 4.80 .422 .453 10.72 11.50 Notes 3 4, 5, 6, 7 .060 .110 .055 .140 .075 .250 1.52 2.79 1.40 3.56 1.90 6.35 2 Dimensions are in inches. Millimeters are given for general information only. Angular orientation of this terminal is undefined. Square or radius on end of terminals is optional. Diameter variations within these limits are permitted. The ASME thread reference is 10-32 UNF-2A. Max pitch diameter of plated threads shall be basic pitch diameter .169 inch (4.29 mm). Units shall not be damaged by torque of 15 inch-pounds (1.7 N-m) applied to 10-32 UNF-2B nut assembled on thread. Complete threads to extend to within .078 inch (1.98 mm) of the seating plane. Stud and seating plane shall be electrically insulated from the case, cathode, and anode. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions of DO-10 package. 4 MIL-PRF-19500/304F G SEE NOTE 3 TD T OM SEE NOTE 4 CD HF CH1 HT SEE NOTE 2 CH JUNCTION TEMP MEASUREMENT REF POINT SP OAH SL SEATING PLANE Non-isolated types: 1N3890, 1N3890A, 1N3891, 1N3891A, 1N3893, 1N3893A, 1N3890R, 1N3890AR, 1N3891R, 1N3891AR, 1N3893R, and 1N3893AR LTR CD Dimensions Inches Millimeters Min Max Min Max .424 10.77 CH .405 OM .163 .189 4.14 4.80 SL .422 .453 10.72 11.50 10.29 CH1 G .020 HF .424 .437 10.77 11.10 T HT .075 .175 1.90 4.44 TD NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. .065 OAH Dimensions Inches Millimeters Min Max Min Max .800 20.32 LTR Notes .060 0.51 1.65 5 1.52 SP Notes 6, 7, 8, 9 .060 1.52 .250 6.35 Dimensions are in inches. Millimeters are given for general information only. Forward polarity (cathode to stud) marking is shown. Angular orientation of this terminal is undefined. Square or radius on end of terminals is optional. Diameter variations within these limits are permitted. Terminal-end shape is unrestricted. The ASME thread reference is 10-32 UNF-2A. Max pitch diameter of plated threads shall be basic pitch diameter .169 inch (4.29 mm). Units shall not be damaged by torque of 15 inch-pounds (1.7 N-m) applied to 10-32 UNF-2B nut assembled on thread. Complete threads to extend to within 0.078 inch (1.98 mm) of the seating plane. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions of DO-4 package. 5 MIL-PRF-19500/304F C A B A version LTR Dimensions Inches Millimeters Min Max Min Max A .114 .117 2.89 2.97 B .130 .133 3.30 3.37 C .009 .010 .228 .254 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2 The physical characteristics of the die are as follows: Metallization: Top (anode): Cr/Ni/Ag Back (cathode): Cr/Ni/Ag Ag thickness = 3,000 A minimum, Ni thickness = 1,500 A minimum, Cr thickness = 800 A minimum. FIGURE 3. Physical dimensions of enencapsulated die, A version (JANHCA and JANKCA). 6 MIL-PRF-19500/304F 3.4.3 Diode types 1N3890, 1N3891, and 1N3893 (see figure 2). Diode types1N3890, 1N3891, and 1N3893 (forward polarity) have the cathode electrically connected to the stud and case. 3.4.4 Diode types 1N3890R, 1N3891R, and 1N3893R (see figure 2). Diode types1N3890R, 1N3891R, and 1N3893R (reverse polarity) have the anode electrically connected to the stud and case. 3.4.5 Dissimilar construction. Types utilizing construction as shown on figure 1 shall not be considered structurally identical to types utilizing construction as shown in figure 2. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5.1 Polarity. The polarity shall be indicated by a graphic symbol with the arrow pointing toward the negative end for forward bias. The reversed units shall also be marked with an R following the last digit in the PIN. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). d. Element evaluation (see 4.6). 4.1.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500 and herein, except lot accumulation period shall be 3 months in lieu of 6 weeks. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified herein. Tests in either polarity shall be sufficient to obtain qualification approval of both polarities. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.2 Qualification for JANHC and JANKC. Qualification for JANHC and JANKC devices shall be in accordance with MIL-PRF-19500. 7 MIL-PRF-19500/304F 4.3 Screening of encapsulated devices. Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurement Screen JANS level 3b (1) JANTX and JANTXV levels Surge current (see 4.3.1) Surge current (see 4.3.1) Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) VF2 and IR1 (2) VF2 and IR1 (2) Method 1038, of MIL-STD-750, test condition A, t = 96 hours Method 1038, of MIL-STD-750, test condition A, t = 48 hours 11 Subgroup 2 of table I herein, VF2 and IR1; VF2 = 0.1 V (pk) from initial value; IR1 = 5 A dc or 100 percent from the initial value, whichever is greater. Subgroup 2 of table I herein, VF2 and IR1; VF2 = 0.1 V(pk) from initial value; IR1 = 5 A dc or 100 percent from the initial value, whichever is greater. 12 Burn-in see 4.3.3 and 4.5.2 Not applicable Subgroup 2 and 3 of table I herein, VF2 and IR1; VF2 = 0.1 V (pk); IR1 = 5 A dc or 100 percent from the initial value, whichever is greater Not applicable 3c 9 10 13 (1) Surge shall precede thermal response. These tests shall be performed anytime after screen 3 and before screen 9. (2) IR1 measurement shall not be indicative of an open condition. 4.3.1 Surge current. The surge current test shall be performed in accordance with condition A of method 4066 of MIL-STD-750. The following details shall apply: IO = 0; VRM(w) = 0; six surges; TA = 25C, tp = 8.3 ms, one surge per minute maximum; IFSM values shall be as listed below: Surge current value (IFSM) 1N3885 1N3886 1N3888 1N3890, R 1N3891, R 1N3893, R A - version Non A - version 290 290 290 310 310 310 190 190 190 210 210 210 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD, and K factor where appropriate. The limit will be statistically derived. See appendix E, table E-IX, subgroup 4, of MIL-PRF-19500 and table II, subgroup 4 herein. 8 MIL-PRF-19500/304F 4.3.3 Burn-in and life test. Power burn-in conditions shall be in accordance with test condition B of method 1038 of MIL-STD-750. The following details shall apply: TC = 100C, rated IO, see 4.5.2. a. 1N3885, 1N3890, 1N3890R VR = 100 V (pk) b. 1N3886, 1N3891, 1N3891R VR = 200 V (pk) c. 1N3888, 1N3893, 1N3893R VR = 400 V (pk) 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. Delta electrical measurements shall be in accordance with table III herein. 4.4.2.1 Quality level JANS. Subgroup Method Condition B3 4066 Condition A, TC = 100C; VR = rated VR (see 1.3), six surges, one surge per minute maximum, tp = 8.3 ms. Non-A version devices, IFS = 150 A; IO = 12 A dc A version devices, IFS = 225 A; IO = 20 A dc. B4 1037 0.25 rated IO < IO applied < rated IO (see 4.5.4) 2,000 cycles. B5 1027 IF = 35 A dc at: TA = 125C for 96 hours, or adjusted as required by the chosen TA to give an average lot TJ = 275C; f = 60 Hz; VR = rated VR (pk) (see 1.3). For irradiated devices, include trr as an end-point measurement. B6 3101 RJC = rated RJC (see 1.4); IM = 50 mA IM 250 mA; tH = 30 s minimum; tMD = 50 - 300 s. B8 4065 PRM 636 W for square wave in accordance with test method 4065 of MIL-STD-750 (PRM 1,000 W for half-sine wave). Test shall be performed on each sublot; sampling plan. n = 10, c = 0, electrical end-points, see table I, subgroup 2 herein. 9 MIL-PRF-19500/304F 4.4.2.2 Quality levels JAN, JANTX and JANTXV. Subgroup Method B2 1051 Insulated types -55C to + 175C; uninsulated types -55C to + 175C. B2 4066 Condition A, TC = 100C; VR = rated VR (see 1.3), six surges, one surge per minute maximum, tp = 8.3 ms. Non-A version devices, IFS = 150 A; IO = 12 A dc A version devices, IFS = 225 A; IO = 20 A dc. B3 1037 0.25 rated IO < IO applied < rated IO (see 4.5.4) 2,000 cycles. For irradiated devices, include trr as an end-point measurement. B3 1038 or 1049 Condition A; 340 hrs (separate samples may be used). For irradiated devices, include trr as an end-point measurement. B5 B6 Condition Not applicable. 1032 TA = 150C. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500 and as follows. Delta electrical measurements shall be in accordance with table III herein. Subgroup Method Condition C2 1056 Test condition B. C2 2036 Tension, test condition A, t = 15 s. For 1N3885, A, 1N3886, A, 1N3888, A weight = 5 pounds (2.27 kg). For 1N3890, A, R, AR, 1N3891, A, R, AR, 1N3893, A, R, AR, weight = 20 pounds (9.07 kg). C2 2036 Bending stress, test condition F, method B: t = 15 s. For 1N3885, A, 1N3886, A, 1N3888, A weight = 1 pounds (0.45 kg). For 1N3890, A, R, AR, 1N3891, A, R, AR, 1N3893, A, R, AR, weight = 5 pounds (2.27 kg). C2 2036 Seal torque, test condition D1, torque = 10 oz-inches (0.07 N-m), t = 15 s. C5 3101 RJC = rated RJC (see 1.4); IM = 50 mA IM 250 mA; tH = 30 s minimum; tMD = 50 to 300 s. C6 1037 0.25 rated IO < IO applied < rated IO (see 4.5.4) 6,000 cycles. For irradiated devices, include trr as an end-point measurement. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-IX of MIL-PRF-19500, and table II herein. Delta electrical measurements shall be in accordance with table III herein. 10 MIL-PRF-19500/304F 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Burn-in and steady-state operation life tests. These tests shall be conducted with a half-sine waveform of the specified peak voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average rectifier current. The forward conduction angle of the rectified current shall not be greater than 180C nor less than 150C. 4.5.3 Insulation resistance (case-to-stud). The case to stud insulation resistance test shall be conducted in accordance with condition C of method 1016 of MIL-STD-750. The following details shall apply. The case-to-stud insulation resistance shall be determined in terms of current flow between the case and stud. The specified test method shall be utilized except that the applied voltage shall be within 2.0 percent of the specified value and the current shall be measured by a series microammeter with a voltage drop at 1.0 A dc of less than 1.0 V dc, and an accuracy of 2.0 percent at the 1.0 A dc point. 4.5.4 DC intermittent operation life. The DC intermittent operation life test shall be conducted in accordance with method 1037 of MIL-STD-750. The following details shall apply. A cycle shall consist of an "on" period, when power is applied suddenly, not gradually, to the device for the time necessary to achieve a delta case temperature of 85C, +15C, -5C, followed by an "off" period, when the power is suddenly removed, for cooling. Auxiliary (forced) cooling is permitted during the off period only. theating 5 minutes. P = VF x IF or P = VF(pk) x Iav if using sine wave current. DC full wave current shall be used for the power required during the "on" period (or equivalent half sine wave current). Within the time interval of 50 cycles before to 500 cycles after the termination of the test, the sample units shall be removed from the specified test conditions and allowed to reach room ambient test conditions. Specified end-point measurements for qualification and conformance inspection shall be completed within 96 hours after removal of sample units from the specified test conditions. Additional readings may be taken at the discretion of the manufacturer. 4.5.5 Peak reverse power characterization. The testing to characterize PRM shall be conducted in accordance with method 4065 of MIL-STD-750. The following details shall apply: a. During the test, the voltage (VBR) shall be monitored to verify it has not collapsed. b. Any collapse in VBR during or after the test, or rise in leakage current (IR) after the test that exceeds IR1 in table I, shall be considered a failure to that level of applied PRM. c. Progressively higher levels of PRM shall be applied until failure occurs on all devices within the chosen sample size to characterize each sublot. 4.6 Element evaluation of unencapsulated die. The element evaluation of unencapsulated die shall be in accordance with appendix G of MIL-PRF-19500. For subgroup G3, the test samples shall be assembled in a DO-4 package. 11 MIL-PRF-19500/304F TABLE I. Group A inspection. MIL-STD-750 Inspection 1/ Method Limits Symbol Conditions Min Unit Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Thermal impedance 3101 See 4.3.2 ZJX C/W Forward voltage 4011 Condition B, tp < 8.3 ms, duty cycle < 2 percent pulse IF = 38 A(pk) VF2 1.5 V dc Reverse current 4016 DC method, VR = rated VR (see 1.3) IR1 10 A dc Insulation resistance (case to stud) applicable only to 1N3885, 1N3885A 1N3886, 1N3886A 1N3888, 1N3888A 1016 Test condition C, see 4.5.3 RISO 109 Ohms Subgroup 3 High temperature operation: Reverse current TA = TC = 150C 4016 DC method VR = rated VR(pk) (see 1.3) IR2 2 mA dc Forward voltage 4011 Condition B, IF = IFS; tp = 800 s VF1 2.75 V dc Forward voltage 4011 Condition B, IF = IFS; tp = 8.3 ms VF1 2.55 V dc Subgroups 4 and 5 Not applicable Subgroup 6 2/ Subgroup 7 Reverse recovery time Non A version A-versions ns 4031 TC = 55C; IF = 1 A dc; VR = 30 V dc, di/dt = -25 A/s; Ir(rec) 2 A (pk) 1/ For sampling plan, see MIL-PRF-19500. 2/ VF1 shall be performed with either tp = 800 s or tp = 8.3 ms. 12 trr 200 150 MIL-PRF-19500/304F TABLE II. Group E inspection (all quality levels) for qualification and requalification only. MIL-STD-750 Inspection Method Conditions Subgroup 1 Thermal shock 1056 Hermetic seal 1071 Electrical measurements 0C to 100C, 100 cycles 45 devices, c=0 See table I subgroup 2 and table III herein Subgroup 2 Steady-state dc blocking life Sampling plan 1038 Electrical measurements Condition A; 1,000 hrs 45 devices, c=0 See table I subgroup 2 and table III herein. (Except ZJX need not be performed) Subgroup 4 Thermal impedance curves See MIL-PRF-19500 Subgroup 5 Barometric pressure, reduced (altitude operation) 1001 Hg = rated Hg (see 1.3), t = 60 s, while the test is being performed, IR shall be monitored and shall not exceed 25 dc. TC = 25C 22 devices, c=0 Subgroup 6 ESD 1020 Subgroup 8 Peak reverse power 45 devices 4065 Electrical measurements PRM shall be characterized by the supplier and this data shall be available to the Government. The test (see 4.5.5) shall be performed on each sublot. See 4.5.5 Subgroup 10 Forward surge 4066 Condition A, ten surges of 8.3 ms each at 1 minute intervals, VRWM = rated VRWM (see 1.3). TC = +100C. Non-A version devices, IFS = 150 A; IO = 12 A dc; A version devices, IFS = 225 A; IO = 20 A dc 13 22 devices, c=0 MIL-PRF-19500/304F TABLE III. Groups B and C delta electrical measurements. 1/ 2/ 3/ 4/ 5/ Step MIL-STD-750 Inspection Method Limits Symbol Conditions Min Unit Max 1 Thermal response 3101 See 4.3.2, RJC = rated RJC (see 1.4) VF mV dc 2. Forward voltage 4011 Condition B, IF = 50 mA dc VF3 +50 mV dc maximum change from previous to post intermittent life and thermal shock measurement tests (JANS only). 3. Reverse current 4016 DC method, VR = rated VR (dc) (see 1.3) IR1 100 percent or 5 A, (whichever is greater) change from initial group A reading. 1/ 2/ 3/ 4/ 5/ Devices which exceed the group A limits for this test shall be rejected. The delta measurements for table E-VIA (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table III herein, steps 1 and 2. b. Subgroup 4, see table III herein, steps 1 and 2. c. Subgroup 5, see table III herein, step 3. The delta measurements for table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table III herein, step 1. The delta electrical measurements for table E-VII of MIL-PRF-19500 are as follows: a. Subgroup 2, see table III herein, step 1. b. Subgroup 6, see table III herein, steps 1 and 3 (JANS); and step 1 (JAN, JANTX, and JANTXV). The delta electrical measurements for table E-IX of MIL-PRF-19500 are as follows: a. Subgroup 1, see table III herein, step 1. b. Subgroup 2, see table III herein, step 3. 14 MIL-PRF-19500/304F FIGURE 4. Maximum case temperature in C. 15 MIL-PRF-19500/304F Maximum Impedance Maximum Thermal Thermal Impedance JAN1N3893A ss304 with 132x132 Chip, Tc=25C 10 Theta (C/W) 1 0.1 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 Time (s) FIGURE 5. Thermal impedance graph RJC for non isolated A type devices. 16 10 MIL-PRF-19500/304F 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements should be as specified in the contract or order (see 6.2). When packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) The notes specified in MIL-PRF-19500 are applicable to this specification. 6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of this specification. b. Packaging requirements (see 5.1). c. Lead finish (see 3.4.1). d. The complete PIN, see 1.5 and 6.4. e. For die acquisition, the letter version should be specified (see 1.5.6 and figure 3). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer's List (QML-19500) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from DLA Land and Maritime, ATTN: VQE, Columbus, OH 43216 or e-mail vqe.chief@dla.mil. An online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at https://qpldocs.dla.mil. 6.4 PIN construction examples. 6.4.1 The PINs are constructed using the following form. JANS JAN certification mark and quality level (see 1.5.1) First number and first letter symbols (see 1.5.2.1) Second number symbols (see 1.5.2.2) Suffix symbols for polarity or electrical modified devices (see 1.5.3) 17 1N 3893 R MIL-PRF-19500/304F 6.4.2 Unencapsulated die. The PINs for unencapsulated die are constructed using the following form. JANHC A 1N 3893 JAN certification mark and quality level (see 1.5.1.2) Die identifier for unencapsulated devices (see 1.5.6) First number and first letter symbols (see 1.5.2.1) Second number symbols (see 1.5.2.2) 6.5 List of PINs. 6.5.1 Encapsulated devices. The following is a list of possible PINs available for encapsulated devices covered by this specification sheet. PINs for devices in a DO-10 package JAN1N3885 JANTX1N3885 JANTXV1N3885 JANS1N3885 JAN1N3885A JANTX1N3885A JANTXV1N3885A JANS1N3885A JAN1N3886 JANTX1N3886 JANTXV1N3886 JANS1N3886 JAN1N3886A JANTX1N3886A JANTXV1N3886A JANS1N3886A JAN1N3888 JANTX1N3888 JANTXV1N3888 JANS1N3888 JAN1N3888A JANTX1N3888A JANTXV1N3888A JANS1N3888A PINs for devices in a DO-4 package JAN1N3890 JANTX1N3890 JANTXV1N3890 JANS1N3890 JAN1N3890R JANTX1N3890R JANTXV1N3890R JANS1N3890R JAN1N3890A JANTX1N3890A JANTXV1N3890A JANS1N3890A JAN1N3890AR JANTX1N3890AR JANTXV1N3890AR JANS1N3890AR JAN1N3891 JANTX1N3891 JANTXV1N3891 JANS1N3891 JAN1N3891R JANTX1N3891R JANTXV1N3891R JANS1N3891R JAN1N3891A JANTX1N3891A JANTXV1N3891A JANS1N3891A JAN1N3891AR JANTX1N3891AR JANTXV1N3891AR JANS1N3891AR JAN1N3893 JANTX1N3893 JANTXV1N3893 JANS1N3893 JAN1N3893R JANTX1N3893R JANTXV1N3893R JANS1N3893R JAN1N3893A JANTX1N3893A JANTXV1N3893A JANS1N3893A JAN1N3893AR JANTX1N3893AR JANTXV1N3893AR JANS1N3893AR 18 MIL-PRF-19500/304F 6.5.2 Unencapsulated die. The following is a list of possible PINs for unencapsulated die available on this specification sheet. Quality level JANHC Quality level JANKC JANHCA1N3885 JANKCA1N3885 JANHCA1N3886 JANKCA1N3886 JANHCA1N3888 JANKCA1N3888 JANHCA1N3890 JANKCA1N3890 JANHCA1N3891 JANKCA1N3891 JANHCA1N3893 JANKCA1N3893 6.6 Supersession data. The following types were superseded through a previous revision of this specification and the cancellation of MIL-S-19500/266. A-version devices may be substituted for non A-version devices. Applicable substitutes are as follows: Substitute PIN as specified within MIL-S-19500/304C, dated 6 June 1989 1N3885 1N3886 1N3888 1N3890 1N3890R 1N3891 1N3891R 1N3893 1N3893R Superseded types identified by but not listed on MIL-S-19500/304B, dated 14 September 1982 1N3874 Superseded PIN that were specified within MIL-S-19500/304(EL), dated 21 September 1964 1N3884 1N3877 1N3879 1N3879R 1N3887 1N3889 1N3889R 1N3882 1N3882R 1N3892 1N3892R Superseded PIN that were specified within MIL-S-19500/266B, dated 23 September 1966 1N3875 1N3876 1N3878 1N3880 1N3880R 1N3881 1N3881R 1N3883 1N3883R NOTE: Superseded types should not be used for new design. 6.7 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA1N3885) will be identified on the QML. JANHC and JANKC ordering information PIN (1) (2) Manufacturer 1N3885 1N3886 1N3888 1N3890 1N3891 1N3893 JANHCA1N3885 JANHCA1N3886 JANHCA1N3888 JANHCA1N3890 JANHCA1N3891 JANHCA1N3893 43611 (1) Also applies to "A" suffix devices. (2) For JANS level, replace "JANHC" prefix with "JANKC". 19 MIL-PRF-19500/304F 6.8 Request for new types and configurations. Requests for new device types or configurations for inclusions in this specification sheet should be submitted to: DLA Land and Maritime, ATTN: VAC, Post Office Box 3990, Columbus, OH 43218-3990 or by electronic mail at Semiconductor@dla.mil or by facsimile (614) 693-1642 or DSN 850-6939. 6.9 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. Custodians: Army - CR Navy - EC Air Force - 85 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2019-036) Review activities: Army - AR, MI, SM Navy - AS, MC Air Force - 19 NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at https://assist.dla.mil. 20