SB1H100-E3/54 - Vishay [General Semiconductor]

Document Number: 88716 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 04-Aug-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

High-Voltage Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

SB1H90, SB1H100

Vishay General Semiconductor

New Product

FEATURES

• High barrier technology for improved high TJ

• Guardring for overvoltage protection

• Low power losses and high efficiency

• Low forward voltage drop

• Very low leakage current

• High forward surge capability

• High frequency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in middle voltage high frequency inverters,

freewheeling, dc-to-dc converters and polarity protection

applications.

MECHANICAL DATA

Case: DO-204AL (DO-41)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

PRIMARY CHARACTERISTICS

IF(AV) 1.0 A

VRRM 90 V, 100 V

IFSM 50 A

VF0.62 V

IR1.0 μA

TJ max. 175 °C

DO-204AL (DO-41)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SB1H90 SB1H100 UNIT

Maximum repetitive peak reverse voltage VRRM 90 100 V

Maximum RMS voltage VRMS 63 70 V

Maximum DC blocking voltage VDC 90 100 V

Maximum average forward rectified current IF(AV) 1.0 A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 50 A

Voltage rate of change (rated VR) dV/dt 10 000 V/μs

Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM 1.0 A

Maximum operating junction temperature TJ175 °C

Storage temperature range TSTG - 55 to + 175 °C

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88716

2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 04-Aug-09

SB1H90, SB1H100

Vishay General Semiconductor

New Product

Notes

(1) Pulse test: 300 ms pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≤ 40 ms

Note

(1) P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve Fig. 2 - Typical Instantaneous Forward Characteristics

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL SB1H90 SB1H100 UNIT

Maximum instantaneous forward voltage

IF = 1.0 A

TJ = 25 °C

VF (1)

0.77

TJ = 125 °C 0.62

IF = 2.0 A

TJ = 25 °C 0.86

TJ = 125 °C 0.70

Maximum reverse current at rated VR

TJ = 25 °C

IR (2) 1.0 μA

TJ = 125 °C 0.5 mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SB1H90 SB1H100 UNIT

Maximum thermal resistance

RθJA (1) 57

°C/W

RθJL (1) 15

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

SB1H100-E3/54 0.34 54 5500 13" diameter paper tape and reel

SB1H100-E3/73 0.34 73 3000 Ammo pack packaging

SB1H100HE3/54 (1) 0.34 54 5500 13" diameter paper tape and reel

SB1H100HE3/73 (1) 0.34 73 3000 Ammo pack packaging

0.6

0.8

1.0

5025 75 100 125 150 175

Average Forward Current (A)

Case Temperature (°C)

0.4

0.2

1.2

200 0.20 0.4 0.8 1.0

0.01

0.1

1.2

0.6 1.4 1.6 1.8

100

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

= 150 °C

= 125 °C

= 25 °C

= 100 °C

= 175 °C

Document Number: 88716 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 04-Aug-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

SB1H90, SB1H100

Vishay General Semiconductor

New Product

Fig. 3 - Typical Reverse Characteristics

Fig. 4 - Typical Junction Capacitance

Fig. 5 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

20 6040 10080

Instantaneous Reverse Current (μA)

Percent of Rated Peak Reverse Voltage (%)

0.1

0.01

10 000

100

1000

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

TJ = 100 °C

Reverse Voltage (V)

Junction Capacitance (pF)

0.1 101 100

100

1000

10 000

0.10.01 101

100

0.1

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

DO-204AL (DO-41)

0.107 (2.7)

0.080 (2.0)

DIA.

0.034 (0.86)

0.028 (0.71)

DIA.

1.0 (25.4)

MIN.

1.0 (25.4)

MIN.

0.205 (5.2)

0.160 (4.1)

Legal Disclaimer Notice

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Revision: 12-Mar-12 1Document Number: 91000

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