AP05N50EI-HF
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ 100% Avalanche Test BVDSS 500V
▼ Fast Switching Characteristic RDS(ON) 1.6Ω
▼ Simple Drive Requirement ID5A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
PD@TA=25℃Total Power Dissipation W
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W
Data & specifications subject to change without notice
5
20
31.3
5
12.5
-55 to 150
1.92
+30
Rating
500
Halogen-Free Product
Parameter
201011301
Storage Temperature Range -55 to 150
1
Parameter
The AP05N50 provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching, ruggedized design and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
GDSTO-220CFM(I)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 500 - - V
RDS(ON) Static Drain-Source On-Resistance3VGS=10V, ID=2A - - 1.6 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=2A - 3.5 - S
IDSS Drain-Source Leakage Current VDS=400V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+25V, VDS=0V - - +10 uA
QgTotal Gate Charge3ID=1A - 20 32 nC
Qgs Gate-Source Charge VDS=400V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 8 - nC
td(on) Turn-on Delay Time3VDD=250V - 10 - ns
trRise Time ID=1A - 4 - ns
td(off) Turn-off Delay Time RG=3.3Ω-27-ns
tfFall Time VGS=10V - 18 - ns
Ciss Input Capacitance VGS=0V - 775 1240 pF
Coss Output Capacitance VDS=25V - 75 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF
RgGate Resistance f=1.0MHz - 3.5 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3IS=2A, VGS=0V - - 1.5 V
trr Reverse Recovery Time3IS=2A, VGS=0V, - 250 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 1.75 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=5A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP05N50EI-HF
A
P05N50EI-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.8
0.9
1
1.1
1.2
-40 0 40 80 120
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0
2
4
6
8
0 4 8 12162024
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
8.0V
7.0V
6.0V
VG=5.0V
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=2A
VG=10V
0
1
2
3
4
5
0 5 10 15 20 25 30
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
8.0V
7.0V
6.0V
VG=5.0V
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150oCT
j = 25oC
0
0.5
1
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
ID=250uA
ID=1mA
AP05N50EI-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
2
4
6
8
10
12
0 4 8 12 16 20 24
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I
D=1A
VDS =400V
0
200
400
600
800
1000
1200
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
Operation in this area
limited by RDS(ON)
