TLP187
1
Photocouplers Infrared LED & Photo Transistor
TLP187
TLP187
TLP187
TLP187
Start of commercial production
2012-10
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Programmable Logic Controllers (PLCs)
• I/O Interface Boards
• Home Electric Appliances
2.
2.
2.
2. General
General
General
General
TLP187 is a photocoupler that consist of an infrared LED optically coupled to a darlington transistor. Housed in
a SO6 package, it has a high noise immunity and a high insulation. With the high breakdown voltage between
the collector and emitter, TLP187 is suitable in applications such as 100 VDC output modules of programmable
controllers.
3.
3.
3.
3. Features
Features
Features
Features
(1) Collector-emitter voltage: 300 V (min)
(2) Current transfer ratio: 1000 % (min)
(3) Isolation voltage: 3750 Vrms (min)
(4) Operation temperature range:-55 to 110
(5) Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
(Note 1)
(Note 1)
(Note 1)
CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory
Note 1: When a VDE approved type is needed, please designate the Option (V4)
Option (V4)
Option (V4)
Option (V4).
4.
4.
4.
4. Packaging and Pin Configuration
Packaging and Pin Configuration
Packaging and Pin Configuration
Packaging and Pin Configuration
11-4M1S
1: Anode
3: Cathode
4: Emitter
6: Collector
2019-11-19
Rev.5.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP187
2
5.
5.
5.
5. Principle of Operation
Principle of Operation
Principle of Operation
Principle of Operation
5.1.
5.1.
5.1.
5.1. Mechanical Parameters
Mechanical Parameters
Mechanical Parameters
Mechanical Parameters
Characteristics
Creepage distances
Clearance
Internal isolation thickness
Min
5.0
5.0
0.4
Unit
mm
6.
6.
6.
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
LED
Detector
Common
Characteristics
Input forward current
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
Input power dissipation
Input power dissipation
derating
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Collector power dissipation
derating
Junction temperature
Operating temperature
Storage temperature
Lead soldering temperature
Total power dissipation
Isolation voltage
(Ta ≥ 90 )
(Ta ≥ 90 )
(Ta ≥ 25 )
(10 s)
AC, 60 s, R.H. ≤ 60 %
Symbol
IF
∆IF/∆Ta
IFP
VR
PD
∆PD/∆Ta
Tj
VCEO
VECO
IC
PC
∆PC/∆Ta
Tj
Topr
Tstg
Tsol
PT
BVS
Note
(Note 1)
(Note 2)
Rating
50
-1.43
1
5
100
-2.86
125
300
0.3
150
150
-1.5
125
-55 to 110
-55 to 125
260
200
3750
Unit
mA
mA/
A
V
mW
mW/
V
mA
mW
mW/
mW
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 100 µs, f = 1000 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
2019-11-19
Rev.5.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP187
3
7.
7.
7.
7. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
LED
Detector
Characteristics
Input forward voltage
Input reverse current
Input capacitance
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Dark Current
Collector-emitter capacitance
Symbol
VF
IR
Ct
V(BR)CEO
V(BR)ECO
IDARK
CCE
Note Test Condition
IF = 10 mA
VR = 5 V
V = 0 V, f = 1 MHz
IC = 0.1 mA
IE = 0.1 mA
VCE = 200 V
VCE = 200 V, Ta = 85
V = 0 V, f = 1 MHz
Min
1.1
300
0.3
Typ.
1.25
30
0.01
12
Max
1.4
10
0.2
20
Unit
V
µA
pF
V
µA
pF
8.
8.
8.
8. Coupled Electrical Characteristics (Unless otherwise specified, T
Coupled Electrical Characteristics (Unless otherwise specified, T
Coupled Electrical Characteristics (Unless otherwise specified, T
Coupled Electrical Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Current transfer ratio
Saturated current transfer ratio
Collector-emitter saturation
voltage
OFF-state collector current
Symbol
IC/IF
IC/IF(sat)
VCE(sat)
IC(off)
Note Test Condition
IF = 1 mA, VCE = 1 V
IF = 10 mA, VCE = 1 V
IC = 10 mA, IF = 1 mA
IC = 100 mA, IF = 10 mA
VF = 0.7 V, VCE = 200 V
Min
1000
500
0.3
Typ.
4000
Max
1.0
1.2
20
Unit
%
V
µA
9.
9.
9.
9. Isolation Characteristics (Unless otherwise specified, T
Isolation Characteristics (Unless otherwise specified, T
Isolation Characteristics (Unless otherwise specified, T
Isolation Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Total capacitance (input to
output)
Isolation resistance
Isolation voltage
Symbol
CS
RS
BVS
Note
(Note 1)
(Note 1)
(Note 1)
Test Conditions
VS = 0 V, f = 1 MHz
VS = 500 V, R.H. ≤ 60 %
AC, 60 s
Min
1012
3750
Typ.
0.8
1014
Max
Unit
pF
Ω
Vrms
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
10.
10.
10.
10. Switching Characteristics (Unless otherwise specified, T
Switching Characteristics (Unless otherwise specified, T
Switching Characteristics (Unless otherwise specified, T
Switching Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
Symbol
tr
tf
ton
toff
ton
ts
toff
Note Test Condition
VCC = 10 V, IC = 10 mA,
RL = 100 Ω
See Figure 10.1
RL = 180 Ω, VCC = 10 V,
IF = 16 mA
Min
Typ.
40
15
50
15
5
40
80
Max
Unit
µs
Fig.
Fig.
Fig.
Fig. 10.1
10.1
10.1
10.1 Switching Time Test Circuit and Waveform
Switching Time Test Circuit and Waveform
Switching Time Test Circuit and Waveform
Switching Time Test Circuit and Waveform
2019-11-19
Rev.5.0
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Toshiba Electronic Devices & Storage Corporation
TLP187
4
11.
11.
11.
11. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 11.1
11.1
11.1
11.1 I
I
I
IF
F
F
F - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 11.2
11.2
11.2
11.2 P
P
P
PC
C
C
C - T
- T
- T
- Ta
a
a
a
Fig.
Fig.
Fig.
Fig. 11.3
11.3
11.3
11.3 I
I
I
IFP
FP
FP
FP - D
- D
- D
- DR
R
R
RFig.
Fig.
Fig.
Fig. 11.4
11.4
11.4
11.4 I
I
I
IF
F
F
F - V
- V
- V
- VF
F
F
F
Fig.
Fig.
Fig.
Fig. 11.5
11.5
11.5
11.5 ∆
∆
∆
∆V
V
V
VF
F
F
F/
/
/
/∆
∆
∆
∆T
T
T
Ta
a
a
a - I
- I
- I
- IF
F
F
FFig.
Fig.
Fig.
Fig. 11.6
11.6
11.6
11.6 I
I
I
IFP
FP
FP
FP - V
- V
- V
- VFP
FP
FP
FP
2019-11-19
Rev.5.0
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Toshiba Electronic Devices & Storage Corporation
TLP187
5
Fig.
Fig.
Fig.
Fig. 11.7
11.7
11.7
11.7 I
I
I
IC
C
C
C - V
- V
- V
- VCEO
CEO
CEO
CEO Fig.
Fig.
Fig.
Fig. 11.8
11.8
11.8
11.8 I
I
I
IC
C
C
C - I
- I
- I
- IF
F
F
F
Fig.
Fig.
Fig.
Fig. 11.9
11.9
11.9
11.9 I
I
I
IDARK
DARK
DARK
DARK - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 11.10
11.10
11.10
11.10 I
I
I
IC
C
C
C/I
/I
/I
/IF
F
F
F - I
- I
- I
- IF
F
F
F
Fig.
Fig.
Fig.
Fig. 11.11
11.11
11.11
11.11 V
V
V
VCE(sat)
CE(sat)
CE(sat)
CE(sat) - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 11.12
11.12
11.12
11.12 I
I
I
IC
C
C
C - T
- T
- T
- Ta
a
a
a
2019-11-19
Rev.5.0
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Toshiba Electronic Devices & Storage Corporation
TLP187
6
Fig.
Fig.
Fig.
Fig. 11.13
11.13
11.13
11.13 Switching Time - R
Switching Time - R
Switching Time - R
Switching Time - RL
L
L
L
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2019-11-19
Rev.5.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP187
7
12.
12.
12.
12. Soldering and Storage
Soldering and Storage
Soldering and Storage
Soldering and Storage
12.1.
12.1.
12.1.
12.1. Precautions for Soldering
Precautions for Soldering
Precautions for Soldering
Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective
of whether a soldering iron or a reflow soldering method is used.
• When using soldering reflow.
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
Fig.
Fig.
Fig.
Fig. 12.1.1
12.1.1
12.1.1
12.1.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
• When using soldering flow
Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds.
Mounting condition of 260 within 10 seconds is recommended.
Flow soldering must be performed once.
• When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not
exceeding 350
Heating by soldering iron must be done only once per lead.
12.2.
12.2.
12.2.
12.2. Precautions for General Storage
Precautions for General Storage
Precautions for General Storage
Precautions for General Storage
• Avoid storage locations where devices may be exposed to moisture or direct sunlight.
• Follow the precautions printed on the packing label of the device for transportation and storage.
• Keep the storage location temperature and humidity within a range of 5 to 35 and 45 % to 75 %,
respectively.
• Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
• Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
• When restoring devices after removal from their packing, use anti-static containers.
• Do not allow loads to be applied directly to devices while they are in storage.
• If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
2019-11-19
Rev.5.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP187
8
Package Dimensions
Package Dimensions
Package Dimensions
Package Dimensions
Unit: mm
Weight: 0.08 g (typ.)
Package Name(s)
TOSHIBA: 11-4M1S
2019-11-19
Rev.5.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP187
9
https://toshiba.semicon-storage.com/
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
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minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
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Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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