Rugged Power MOSFETs File Number 2221 Avalanche-Energy-Rated P-Channel Power MOSFETs -10A, and -12A, -60V and -100V pston = 0.300 and 0.400 Features: Single pulse avalanche energy rated = SOA is power-dissipation limited s Nanosecond switching speeds a Linear transfer characteristics = High input impedance The IRF9530, IRF9531, IRF9532 and IRF9533 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are p-channel en- hancement-mode silicon-gate power field-effect transistors designed for applications such as. switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors re- quiring high speed and low gate-drive power. These types IRF9530, IRF9531 IRF9532, IRF9533 TERMINAL DIAGRAM o 92CS-43262 P-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATION DRAIN ~ (FLANGE) CO can be operated directly from integrated circuits Tor view GATE The IRF-types are supplied in the JEDEC TO-220AB plastic 9208-39528 package. JEDEC TO-220AB Absolute Maximum Ratings Parameter IRF9530 IRF9531 IRF9532 IRF9533 Units Vos Drain - Source Voltage -100 -60 -100 -60 Vv VpGR Drain - Gate Voltage (Rgg = 20 ko) @) -100 -60 -100 -60 Vv Ip @ Tc = 26C Continuous Drain Current -12 -12 -10 -10 A Ip @ Tc = 100C Continuous Drain Current -7.5 -7.5 -6.5 -6.5 A lpm Pulsed Drain Current @ -48 -48 -40 -40 A VGs Gate - Source Voltage +20 v Pp @Tc = 25C Max. Power Dissipation 75 (See Fig. 14) Ww Linear Derating Factor 0.6 {See Fig, 14) w/?C Eas Single Pulse Avalanche Energy @ 500 mJ Semin ci oe "5510 150 ve Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s} c 6-371Rugged Power MOSFETs IRF9530, IRF9531, IRF9532, IRF9533 Electrical Characteristics @Tc = 25C (Unless Otherwise Specified) Parameter Type Min. Typ Max. Units Test Conditions BVpss_ Drain - Source Breakdown Voltage IRF9530 . inegs32 | 100 | . v Ves = OV IRF9531 < inF9sa3 | 6 - Vv Ip = -250nA VGsith) Gate Threshold Voltage ALL -2.0 -4.0 v Vos = Vgs.'Ip = -250KA less Gate-Source Leakage Forward ALL -500 nA Veg = -20V loss Gate-Source Leakage Reverse ALL - - 500 nA VGs = 20V 'pss Zero Gate Voltage Drain Current ALL = 250 BA Vos = Max. Rating. VGg = OV = -1000 BA Vos = Max. Rating x 0.8, Vgg : OV, Te = 125C IDion) On State Drain Current @ IRF9530 iegs31 | '? - a Vos? !piom * Rostoni max. Vag = 10V IRF9532 | 49 J A IRF9533 Royston} Static Drain-Source On-State (RF9530 Resistance IRF9531 0.25 | 0.30 a Vv tov 65A GS > - Ip * 8 IRF9532 IRF9533 _ 0.30 | 0.40 Q fs Forward Transconductance @ ALL 2.0 3.8 - Sl) Vos ?'pton) *Fosionj max. ip = 8-5A Ciss input Capacitance ALL 500 - pF V@g = OV. Vpg - -25V.t = 1.0 MHz Coss Output Capacitance ALL ~ 300 =~ pF See Fig. 10 Cig Reverse Transfer Capacitance ALL - 100 _ pF Ttdion) Turn-On Delay Time ALL 30 60 ns Vop = 0.5 BVoss: 'p = -6.5A, Zo = 600 ty Rise Time ALL - FO 140 ns See Fig. 17 tatoff) Turn-Off Delay Time ALL 7 140 ns (MOSFET switching times are essentially tf - Fall Time ALL ~ 70 140 ns independent of operating temperature.} Qg Total Gate Charge ALL - 25, 45 nc Ves = -18V. Ip = - TSA, Vos = 0.8 Max. Rating. {Gate-Source Pius Gate-Drain) See Fig. 18 for test circuit. (Gate charge is essentially Qgs Gate-Source Charge ALL 43 23 nc independent of operating temperature.) Qga Gate-Drain (Miller") Charge ALL 12 22 ac lp Internal Drain Inductance 3.6 - nH Measured from the Modified MOSFET contact screw on tab sy nbol showing the to center of die. internal device ALL inductances. 45 nH Measured from the b drain lead, 6mm (0.25 oO in.) from package to center of die. Ls Internal Source Inductance ALL - 7.6 aH Measured from the GO source lead, 6mm {0.25 in.) from package to source O bonding pad. s Thermal Resistance Regie Junction-to-Case ALL - - 1.67 C/W Recs Case-to-Sink ALL 0 . C/w Mounting surface flat, smooth, and greased. Rava Junction-to-Ambient ALL 80 C/W Typical socket mount Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF9530 _ _ 12 A Modified MOSFET symbol (Body Diode) (RF9531 showing the integral reverse P-N junction rectifier. WRF9532 } _ 10 A IRF9533 ism Pulse Source Current IRF9530 _ _ . G (Body Diode} @ IRF9531 48 A IRF9532 IRF9533 ~ : 40 A s Vsp _ Diode Farward Voltage @ (RF9530 _ |e Tp = 25C, le = -12A, Vee = OV IRF9531 18 Vv c us GS IRF9532 . - Te = 26C, le = -10A,V = OV IRF9533 1s V c us GS try Reverse Recovery Time ALL - 300 ns Ty = 180C, Ip = -12A, dig/dt = 100 A/ps Qear Reverse Recovered Charge ALL - 1.8 - uC Ty = 150C, tg = -12A, dip/dt = 100 A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled bys + Lp. @MTy = 25C to 150C. @_ Repetitive Rating; Pulse width limited @ Voo = 26V, Starting Ty = 25C, L = 5.2 mH, @ Pulse Test: Pulse width < 300us. 6-372 Duty Cycle < 2%. by maximum junction temperature. See Transient Thermal Impedance Curve (Fig. 5). Re = 25M, Peak h = 12A, (See Fig. 15 and 16).Rugged Power MOSFETs IRF9530, IRF9531, IRF9532, IRF9533 80 yS PULSE TEST Vos > !pjon) * Ros(on) max. | Ty = 125 80uS PULSE Ty = 25C Ty =-55 a = a ra a w w a a = = < < r z 5 wh we 4 c 4 3 3 3 3 z z z z Fs F a a 6 3 10 = 4 -6 -8 10 Vos. DRAIN-TO-SQURCE VOLTAGE (VOLTS) Vgg, GATE-TO-SOURCE VOLTAGE (VOLTS) 92C:S-43288 92CS-43289 Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics IN THIS AREA 1S LIMITED t a =25C J = 150 C MAX, Reuc = 1.67 C/W Ip, DRAIN CURRENT (AMPERES) Ip, DRAIN CURRENT (AMPERES) i 2 4 68 2 468 2 4 68 =1 2 -3 =4 -5 -1.0 -10 -100 4000 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 92CS-43290 920$-44324 Fig. 3 - Typical saturation characteristic. Fig. 4 - Maximum safe operating area. o = w ow $. ty LI L t2 . DUTY FACTOR, D = ty/tz . PER UNIT BASE = Rac SINGLE PULSE (TRANSIENT = 1.67 DEG. c/w. THERMAL IMPEDANCE) Tym -Te = Pom: . xn & 9 o a b o2 Nw 35 az $< eo Sr w 22 5 Su rE Nu Ee 2 5 a 2 wl Q 2 < a w a z a < z z 2 9 8 10-5 10-4 10-3 10-2 1071 1 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) 92CM- 43325 Fig. - Maximum effective transient thermal impedance, junction-to-case vs. pulse duration. 6-373Rugged Power MOSFETs IRF9530, IRF9531, IRF9532, IRF9533 5 a x < a & o wi Q z 2 8 3} z < @ a a a 8 > o Vos > !pion) x Ros(on) max. 80 a z wi = w a w y9 a FE yg 3 5 z 9 a z < + 2 & =12 = Ip, DRAIN CURRENT (AMPERES) 92CS-43293 Fig. 6 - Typical transconductance vs. drain current. = VOLTAGE (NORMALIZED) ~40 40 80 120 180 Ty, JUNCTION TEMPERATURE (C) 9208-43204 Fig. 8 - Breakdown voltage vs. temperature. 1000 \ Vas =0 t=1MHz 8 \ Cigs = Cgs + Cog. Cag SHORTED ~ \ Cres = ga s Cos Cog = Coss = Cds + ee S800 \ oes as Cys + Cog J z Cras Cas + Coa c 3 \ N\ | < & 400 MN 3S \ J KX r |_| 200 poe] 10 -20 -30 -40 -50 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) 9208-43298 Fig. 10 - Typical capacitance vs. drain-to-source voltage. 6-374 lon, REVERSE 04 +06 -08 -1.0 -1.2 ~-1.4 ~16 +18 Vgp, SOURCE-TO-ORAIN VOLTAGE (VOLTS) 9208-43270 Fig. 7 - Typical source-drain diode forward voltage. - eo ~ a 1.0 (NORMALIZED) Rpsion), DRAIN-TO-SOURCE ON RESISTANCE a -40 40 a0 120 Ty, JUNCTION TEMPERATURE (C) 92CS-43303 Fig. 9 - Normalized on-resistance vs. temperature. a ip=-15a 5 FOR TEST CIRCUIT $ SEE FIGURE 18 > = -s 3 fs 1 5 2 -10 u Vpg = -80 V, IRF9530, 9532 @ 3 Vps = ~50V @ -15 +++ . po $ Vpg = -20 w < @ -20 : i 4 3 4 > -25 Qo d 16 24 32 40 Qg, TOTAL GATE CHARGE (nC) 9208-43326 Fig. 11 - Typical gate charge vs. gate-to-source voltage.Rugged Power MOSFETs IRF9530, IRF9531, 1RF9532, IRF9533 1.0 | Veg = -10v- z -~ 6 08 3 ue o a 3: : 8S 06 = z= e eu | zz << =H 0.4 J; a ~~ z ge z a < 8 02 4 - DURATION. INITIAL Ty = 25 C. (HEATING EFFECT OF 2.0 yS PULSE IS MINIMAL.) 1. f L 1 1 re 1 1. Oo -1t0 20 -30 -40 -50 25 50 75 100 125 450 Ip, ORAIN CURRENT (AMPERES) Tc, CASE TEMPERATURE (C) 9208-43298 92C$-43327 Fig. 13 ~ Maximum drain current vs. case temperature. Fig. 12 - Typical on-resistance vs. drain current. Vos tp = {ov Fe Ves=-10V < z z 8 VARY tp TO OBTAIN < REQUIRED PEAK I a 92CS-43278 6 : ? . f = Fig. 15 - Unclamped inductive tast circuit. z 2 a 20 a One enw fpocscsccee ---- 1 N. i / Ny / 0 20 40 66 80 100 120 140 160 180 200 Tc, CASE TEMPERATURE (C) a hs { Tv 2CS- 9208-43305 Ww NM Von Fig. 14 - Power vs. temperature derating curve. tp 8Vpss 92CS-43279 Fig. 16 - Unclamped inductive waveforms. -Vos ) (SOLATED CURRENT SUPPLY) Ro REGULATOR 9 SAME TYPE AS DUT pur b = Ps L tp Rg i + 7 = Vgsg = -10V O+Vps VARY tp TO OBTAIN f IG \p REQUIRED PEAK I, CURRENT CURRENT . SAMPLING SAMPLING $2CS-43260 RESISTOR RESISTOR 92CS-43281 Fig. 17 ~ Switching time test circuit. Fig. 18 - Gate charge test circuit. 6-375