CYStech Electronics Corp.
Spec. No. : C848M3-H
Issued Date : 2003.06.17
Revised Date : 2005.07.11
Page No. : 1/4
BTD882AM3 CYStek Product Specification
Low VCE(sat) NPN Epitaxial Planar Transistor
BTD882AM3
Features
• Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A
• Excellent current gain characteristics
• Complementary to BTB772AM3
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limit Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 3 A
Collector Current (Pulse) ICP 7 (Note 1) A
600 mW
1 (Note 2) W
Power Dissipation Pd
2 (Note 3) W
208 °C/W
125 (Note 2) °C/W
Thermal Resistance, Junction to
Ambient RθJA
62.5 (Note 3) °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm
3. When mounted on ceramic with area measuring 40×40×1 mm
SOT-89
BTD882AM3
B：Base
C：Collector
E：Emitter
B C E
CYStech Electronics Corp.
Spec. No. : C848M3-H
Issued Date : 2003.06.17
Revised Date : 2005.07.11
Page No. : 2/4
BTD882AM3 CYStek Product Specification
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 80 - - V IC=50µA, IE=0
BVCEO 50 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=50µA, IC=0
ICBO - - 1 µA VCB=50V. IE=0
IEBO - - 1 µA VEB=3V,IC=0
*VCE(sat) - 0.25 0.5 V IC=2A, IB=0.2A
*VBE(sat) - - 2 V IC=2A, IB=0.2A
*hFE1 120 - - - VCE=2V, IC=100mA
*hFE2 160 - 820 - VCE=2V, IC=500mA
*hFE3 100 - - - VCE=2V, IC=1A
fT - 90 - MHz VCE=5V, IC=0.1A, f=100MHz
Cob - 45 - pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE2
Rank P E T
Range 160~320 270~560 390~820
CYStech Electronics Corp.
Spec. No. : C848M3-H
Issued Date : 2003.06.17
Revised Date : 2005.07.11
Page No. : 3/4
BTD882AM3 CYStek Product Specification
Characteristic Curves
Current gain vs Collector current
10
100
1000
1 10 100 1000 10000
Collector current---IC(mA)
Current gain---HF
E
VCE=5V
VCE=1V
VCE=2V
Saturation voltage vs Collector current
1
10
100
1000
1 10 100 1000 10000
Collector current---IC(mA)
Saturation voltage---(mV)
IC=40IB
IC=20IBIC=10IB
VCE(sat)
Saturation votlage vs Collector current
100
1000
10000
1 10 100 1000 10000
Collector current---IC(mA)
Saturation voltage---(mV)
VBE(sat)@IC=10IB
Power Derating Curves
0
0.5
1
1.5
2
2.5
0 50 100 150 200
Ambient Temperature---TA(℃)
Power Dissipation---PD(W)
See Note 2 on page 1
See Note 3 on page 1
CYStech Electronics Corp.
Spec. No. : C848M3-H
Issued Date : 2003.06.17
Revised Date : 2005.07.11
Page No. : 4/4
BTD882AM3 CYStek Product Specification
SOT-89 Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max.
DIM Min. Max. Min. Max.
A 0.1732 0.1811 4.40 4.60 F 0.0583 0.0598 1.48 1.527
B 0.1594 0.1673 4.05 4.25 G 0.1165 0.1197 2.96 3.04
C 0.0591 0.0663 1.50 1.70 H 0.0551 0.0630 1.40 1.60
D 0.0945 0.1024 2.40 2.60 I 0.0138 0.0161 0.35 0.41
E 0.01417 0.0201 0.36 0.51
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Marking:
CF
E
F
G
C
B
A
I
D
H
3
2
1
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
Style: Pin 1. Base 2. Collector 3. Emitter
