1/9February 2005
n VERY RUGGED BIPOLAR TECHNOLOGY
nBUILT IN CLAMPING ZENER
nHIGH OPERATING JUNCTION
TEMPERATURE
nFULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATION
nHIGH RUGGEDNESS ELECTRONIC
IGNITIONS
DESCRIPTION
The devices are bipolar Darlington transistors
manufactured using Multi-Epitaxial Planar
technology. They have been properly designed to
be used in Automotive environment as electronic
ignition power actuators.
Figure 1: Package
Figure 2: Internal Schematic Diagram
Table 1: Order Code
TO-218 ISOWATT218
1
2
3
1
2
3
Part Number Marking Package Packaging
BU941ZP BU941ZP TO-218 TUBE
BU941ZFI BU941ZPFI ISOWATT218 TUBE
BU941ZP
BU941ZPFI
HIGH VOLTAGE IGNITION COIL DRIVER
NPN POWER DARLINGTON TRANSISTORS
Rev. 6
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Table 2: Absolute Maximum Ratings
Table 3: Thermal Data
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
* Pulsed: Pulsed duration = 300 µs, duty cycle ≤ 1.5 %.
Symbol Parameter Value Unit
BU941ZP BU941ZPFI Unit
VCEO Collector-Emitter Voltage (IB= 0) 350 V
VEBO Emitter-Base Voltage (IC= 0) 5V
ICCollector Current 15 A
ICM Collector Peak Current (tp < 5ms) 30 A
IBBase Current 1A
IBM Base Peak Current (tp < 5 ms) 5A
Ptot Total Dissipation at TC = 25 oC155 65 W
Visol Insulation Withstand Voltage (RMS) from All Three Leads to
External Heatsink
2500 V
Tstg Storage Temperature -65 to 175 -65 to 175 °C
TJMax. Operating Junction Temperature 175 175 °C
TO-218 ISOWATT218 Unit
Rthj-case Thermal Resistance Junction-Case Max 0.97 2.3 oC/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEO Collector Cut-off Current
(IB = 0)
VCE = 300 V
VCE = 300 V Tj = 125 oC
100
0.5
µA
mA
IEBO Emitter Cut-off Current
(IC = 0 )
VEB = 5 V 20 mA
VCL* Clamping Voltage IC = 100 mA 350 500 V
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 8 A IB =100 mA
IC = 10 A IB = 250 mA
IC = 12 A IB = 300 mA
1.8
1.8
2
V
V
V
VBE(sat)* Base-Emitter
Saturation Voltage
IC = 8 A IB =100 mA
IC = 10 A IB = 250 mA
IC = 12 A IB = 300 mA
2.2
2.5
2.7
V
V
V
hFE* DC Current Gain IC = 5 A VCE = 10 V 300
Functional Test VCC = 24 V L = 7 mH
(see fig. 12)
10 A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
VCC = 12 V L = 7 mH
VBE(off) = 0 V RBE =47 W
VClamp = 300 V IC = 7 A
IB = 70 mA (see fig. 14)
15
0.5
µs
µs
VFDiode Forward Voltage IF = 10 V 2.5 V
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Figure 3: Safe Operating Area
Figure 4: DC Current Gain
Figure 5: Collector-Emitter Saturation Voltage
Figure 6: Derating Curves
Figure 7: DC Current Gain
Figure 8: Collector-Emitter Saturation Voltage
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Figure 9: Base-Emitter Saturation Voltage
Figure 10: Collector-Emitter Saturation Volt-
age
Figure 11: Base-Emitter Saturation Voltage
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Figure 12: Functional Test Circuit
Figure 13: Functional Test Waveforms
Figure 14: Switching Time Test Circuit
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DIM. mm.
MIN. TYP MAX.
A 4.70 4.90
C 1.17 1.37
D2.50
D1 1.27
E 0.50 0.78
F 1.10 1.30
F3 1.75
F4 2.10
G 10.80 11.10
H 14.70 15.20
H1 10.00
L12.20
L2 16.20
L3 18.00
L4 2.40
L5 3.95 4.15
L6 31.00
Dia 4.00 4.10
TO-218 (SOT-93) MECHANICAL DATA
0016087 D
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DIM. mm.
MIN. TYP MAX.
A 5.35 5.65
B2.5
C 3.30 3.80
D2.90 3.10
D1 1.88 2.08
E 0.75 0.95
F 0.75 0.95
F2 1.50 1.85
F3 1.90 2.20
F5 1.10
G 10.80 11.20
H 15.80 16.20
L9
L1 20.80 21.20
L2 19.10 19.90
L3 22.80 23.60
L4 40.50 42.50
L5 4.85 5.25
L6 20.25 20.75
N 2.0 2.40
R4.6
Dia 3.50 3.70
ISOWATT218 (option “B”) MECHANICAL DATA
0016093B n
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Table 5: Revision History
Date Release Change Designator
22-Apr-2002 4 Fourth Release
09-Sep-2004 5 Fifth Release
03-Feb-2005 6 Mechanical Data has been updated
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