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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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TIP30C PNP Epitaxial Silicon Transistor Features * Medium Power Linear Switching Applications * Complementary to TIP29 Series TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP30C TIP30C TO-220 3L (Single Gauge) Bulk TIP30CTU TIP30C TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -1 A ICP Collector Current (Pulse) -3 A IB Base Current -0.4 A TJ Junction Temperature 150 C -65 to 150 C TSTG Storage Temperature Range (c) 2000 Fairchild Semiconductor Corporation TIP30C Rev. 1.1.0 www.fairchildsemi.com TIP30C -- PNP Epitaxial Silicon Transistor November 2014 Values are at TC = 25C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TA = 25C) 2 Collector Dissipation (TC = 25C) 30 Unit W Electrical Characteristics Values are at TC = 25C unless otherwise noted. Symbol VCEO(sus) Parameter Conditions (1) Min. Max. Unit Collector-Emitter Sustaining Voltage IC = -30 mA, IB = 0 ICEO Collector Cut-Off Current VCE = -60 V, IB = 0 -0.3 mA ICES Collector Cut-Off Current VCE = -100 V, VEB = 0 -200 A IEBO Emitter Cut-Off Current -1.0 mA hFE VCE(sat) VBE(on) fT VEB = -5 V, IC = 0 DC Current Gain(1) (1) Collector-Emitter Saturation Voltage Base-Emitter On Voltage(1) Current Gain Bandwidth Product -100 VCE = -4 V, IC = -0.2 A 40 VCE = -4 V, IC = -1 A 15 V 75 IC = -1 A, IB = -125 mA -0.7 V VCE = -4 V, IC = -1 A -1.3 V VCE = -10 V, IC = -200 mA, f = 1 MHz 3.0 MHz Note: 1. Pulse test: pw 300 s, duty cycle 2%. (c) 2000 Fairchild Semiconductor Corporation TIP30C Rev. 1.1.0 www.fairchildsemi.com 2 TIP30C -- PNP Epitaxial Silicon Transistor Thermal Characteristics VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = -4V 100 10 1 -1 -10 -100 -1000 -10000 IC/IB = 10 VBE(sat) -1000 -100 VCE(sat) -10 -1 -10000 -10 IC[mA], COLLECTOR CURRENT -100 -1000 -10000 IC[mA], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage -10 40 PC[W], POWER DISSIPATION -1 DC s 5m IC(MAX) (DC) s 1m IC[A], COLLECTOR CURRENT 35 IC(MAX) (PULSE) TIP30 VCEO MAX. TIP30A VCEO MAX. TIP30B VCEO MAX. TIP30C VCEO MAX. -0.1 -10 25 20 15 10 5 0 -100 0 25 50 75 100 125 150 175 200 o VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 3. Safe Operating Area (c) 2000 Fairchild Semiconductor Corporation TIP30C Rev. 1.1.0 30 Figure 4. Power Derating www.fairchildsemi.com 3 TIP30C -- PNP Epitaxial Silicon Transistor Typical Performance Characteristics TIP30C -- PNP Epitaxial Silicon Transistor Physical Dimensions Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB (c) 2000 Fairchild Semiconductor Corporation TIP30C Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiT OPTOLOGIC(R) AccuPower Awinda(R) AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FPS OPTOPLANAR(R) (R) PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R)* (R) TinyBoost TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM XsensTM TM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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