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TIP30C — PNP Epit axial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30C Rev. 1.1.0
November 2014
TIP30C
PNP Epitaxial Silicon Transistor
Features
Medium Power Linear Switching Applications
Complementary to TIP29 Series
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP30C TIP30C TO-220 3L (Single Gauge) Bulk
TIP30CTU TIP30C TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -100 V
VCEO Collector-Emitter Voltage -100 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -1 A
ICP Collector Current (Pulse) -3 A
IBBase Current -0.4 A
TJJunction Temperat ure 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
TIP30C — PNP Epit axial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30C Rev. 1.1.0 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw300 μs, duty cycle 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TA = 25°C) 2 W
Collector Dissipation (TC = 25°C) 30
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining Voltage(1) IC = -30 mA, IB = 0 -100 V
ICEO Collector Cut-Off Current VCE = -60 V, IB = 0-0.3mA
ICES Collector Cut-Off Current VCE = -100 V, VEB = 0 -200 μA
IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -1.0 mA
hFE DC Current Gain(1) VCE = -4 V, IC = -0.2 A 40
VCE = -4 V, IC = -1 A 15 75
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = -1 A, IB = -125 mA -0.7 V
VBE(on) Base-Emitter On Voltage(1) VCE = -4 V, IC = -1 A -1.3 V
fT Current Gain Bandwidth Product VCE = -10 V, IC = -200 mA,
f = 1 MHz 3.0 MHz
TIP30C — PNP Epit axial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30C Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-1 -10 -100 -1000 -10000
1
10
100
1000 VCE = -4V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000 -10000
-10
-100
-1000
-10000 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-10 -100
-0.1
-1
-10
DC
TIP30C VCEO MAX.
TIP30B VCEO MAX.
TIP30A VCEO MAX.
TIP30 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP30C — PNP Epit axial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30C Rev. 1.1.0 4
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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